HANBIT HMF6M32M6V-90

HANBit
HMF6M32M6V
FLASH-ROM MODULE 24MByte (6M x 32-Bit) ,72pin-SIMM, 3.0V
Part No. HMF6M32M6V
GENERAL DESCRIPTION
The HMF6M32M6V is a high-speed flash read only memory (FROM) module containing 12,582,912 words organized in a
x32bit configuration. The module consists of six 2M x 16 FROM mounted on a 72-pin, both-sided, FR4-printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state -machine, which controls the erase and programming circuitry. Write
cycles also internally latch address es and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from other flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +3.0V DC power supply.
FEATURES
PIN ASSIGNMENT
w Access time : 90, 120ns
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
w High-density 24MByte design
1
Vss
25
DQ17
49
/WE
w High-reliability, low-power design
2
/RESET
26
DQ18
50
A18
w Single + 3V ± 0.3V power supply
3
DQ0
27
DQ19
51
A17
w Easy memory expansion
4
DQ1
28
DQ20
52
A16
5
DQ2
29
DQ21
53
A15
6
DQ3
30
Vcc
54
A14
7
DQ4
31
DQ22
55
A13
8
DQ5
32
DQ23
56
A12
9
DQ6
33
/CE_1H
57
A11
10
Vcc
34
/CE_2H
58
A10
11
DQ7
35
DQ24
59
Vcc
12
/CE_1L
36
DQ25
60
A9
13
/CE_2L
37
DQ26
61
A8
14
DQ8
38
DQ27
62
A7
15
DQ9
39
Vss
63
A6
16
DQ10
40
DQ28
64
A5
17
DQ11
41
DQ29
65
A4
18
DQ12
42
DQ30
66
A3
19
DQ13
43
DQ31
67
A2
20
DQ14
44
NC
68
A1
21
DQ15
45
NC
69
A0
22
NC
46
/CE_3L
70
A20
23
/CE_3H
47
A19
71
NC
24
DQ16
48
/OE
72
Vss
w Hardware reset pin(RESET#)
w FR4-PCB design
w Low profile 72-pin SIMM
w Minimum 1,000,000 write/erase cy cle
w Flexible sector architecture
w Embedded algorithms
w Erase suspend / Erase resume
OPTIONS
MARKING
w Timing
90ns access
- 90
120ns access
-120
w Packages
72-pin SIMM
M
72-PIN SIMM
TOP VIEW
URL:www.hbe.co.kr
REV1.0 (June, 2003)
1
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 – A20
32
21
A0-20
/WE
/WE
/OE
/CE_1L
DQ 0-15
A0-20
DQ16-31
/WE
U1
/OE
/CE
A0-20
DQ 16-31
DQ 0-15
/CE_2L
/WE
/WE
/Reset
/Reset
A0-20
A0-20
/OE
/OE
/CE_3L
/CE
/Reset
/WE
/OE
U2
/CE
/WE
/CE_1H
/Reset
A0-20
/OE
U3
/CE
/Reset
/WE
DQ16-31
DQ0-15
/WE
U5
/OE
DQ16-31
U4
/CE
/CE_2H
DQ16-31
DQ 16-31
U6
/CE_3H
/CE
/Reset
/Reset
/CE_3L
Option resister
URL:www.hbe.co.kr
REV1.0 (June, 2003)
2
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VCC
-0.5V to +4.0V
A9, /OE, /RESET, /WP_ACC Relative to Vss
VIN,OUT
-0.5V to +12.5V
Voltage on All other Pins Relative to Vss
VIN,OUT
-0.5V to +4.0V
PD
6W
o
-65 C to +150oC
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
TSTG
Operating Temperature ( Industrial )
-40oC to +85oC
-55oC to +125oC
TA
Operating Temperature ( Extended )
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
2.7V
3.0V
3.6V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.0
-
Vcc+0.3V
Input Low Voltage
VIL
-0.5
-
0.8V
DC CHARACTERISTICS (CMOS Compatible)
PARAMETER
DESCRIPTION
TEST CONDITIONS
ILI
Input Load Current
VIN=Vss to Vcc, Vcc=Vcc max
MIN
TYP.
MAX
UNIT
±3.0
uA
ILIT
A9 Input Load Current
Vcc= Vcc max ; A9=12.5V
35
uA
ILO
Output Leakage Current
VOUT= Vss to Vcc, Vcc= Vcc max
±1.0
uA
ICC1
Vcc Active Read Current
/CE=VIL, /OE=VIH
5MHZ
60
96
(Note1)
Word Mode
1MHZ
12
24
/CE=VIL, /OE=VIH
90
180
mA
Vcc=Vcc max ; /CE,/Reset=Vcc±0.3V
1.2
30
uA
Vcc=Vcc max ; /Reset=Vss±0.3V
1.2
30
uA
1.2
30
uA
Vcc Active Write Current
ICC2
(Note 2 and 4)
ICC3
ICC4
Vcc Standby Current
Vcc Standby Current During
Reset
ICC5
Automatic Sleep
VIH=Vcc±0.3V;
Mode(Note3)
VIL=Vss±0.3V
mA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7xVcc
Vcc+0.3
V
11.5
12.5
V
0.45
V
Voltage for Autoselect and
VID
Temporary Unprotect
VOL
Output Low Voltage
VOH1
Output High Voltage
VOH2
VLKO
Vcc=3.0V ± 10%
IOL=4.0mA, Vcc=Vcc min
IOH=-2.0mA, Vcc=Vcc min
0.85xVcc
V
IOH=-100uA, Vcc= Vcc min
Vcc-0.4
V
Low Vcc Lock-Out Voltage
URL:www.hbe.co.kr
REV1.0 (June, 2003)
2.3
3
2.5
HANBit Electronics Co., Ltd.
V
HANBit
HMF6M32M6V
Note :
1.
The Icc current listed is typically less 2mA/MHz, with /OE at V IH.
2.
Icc active while Embedded Erase or Embedded Program is progress.
3.
Automatic sleep mode enables the low power mode when addresses remain stable for t ACC+30ns.
Typical sleep mode current is 200nA.
4.
Not 100% tested.
LATCHUP CHARACTERISTICS
DESCRIPTION
Input Voltage with respect to Vss on all pins except I/O Pins
(Including A9,/OE, and /Reset)
Input Voltage with respect to Vss on all I/O Pins
Vcc Current
MIN
MAX
-1.0V
12.5V
-1.0V
Vcc+1.0V
-100mA
+100mA
Includes all pins except Vcc. Test conditions: Vcc=3.0V, one pin at a time.
DATA RETENTION
PARAMETER
TEST CONDITIONS
Minimum Pattern Data
MIN
UNIT
O
10
Years
O
20
Years
150 C
Retention Time
125 C
ERASE AND PROGRAMMING PERFORMANCE
TYP
PARAMETER
(NOTE1)
MAX (NOTE2)
UNIT
COMMENTS
15
sec
Excludes 00h programming prior to
sec
erasure (Note4)
Sector Erase Time
1.6
Chip Erase Time
112
Word Programming Time
11
360
us
Chip Programming Time (Word Mode)
24
72
sec
Excludes system level overhead
(Note5)
(Note3)
Notes :
O
1. Typical program and erase times assume the following conditions: 25 C, 3.0V Vcc, 1,000,000 cycles. Additionally
programming typical assume checkerboard pattern.
O
2. Under worst case conditions of 90 C, Vcc=2.7V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, sin ce
most bytes program faster than the maximum program times listed
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two-or four-bus-cycle sequence for the program command.
See table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
URL:www.hbe.co.kr
REV1.0 (June, 2003)
4
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
SOP/TSOP PIN CAPACITANCE
PARAMETER
PARAMETER
SYMBOL
DESCRIPTION
CIN
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
36
45
pF
VOUT = 0
51
72
pF
VIN = 0
45
54
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes :
1. Sampled, not 100% tested
o
2.Test conditions TA = 25 C, f=1.0 MHz.
TEST SPECIFICATIONS
TEST CONDITION
80R
-90/ -120
Output load
UNIT
1TTL gate
Output load capacitance,
30
CL (Including jig capacitance)
Input rise and fall times
100
pF
5
ns
0.0 - 3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
3.3V
IN3064
or Equivalent
Device
Under
Test
CL
URL:www.hbe.co.kr
REV1.0 (June, 2003)
6.2kW
5
2.7kW
Diodes = IN3064
or Equivalent
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
AC CHARACTERISTICS
u Erase / Program Operations
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note1)
Min
tAVWL
tAS
Address Setup Time
Min
-90
-120
UNIT
90
120
ns
0
ns
tWLAX
tAH
Address Hold Time
Min
45
50
ns
tDVWH
tDS
Data Setup Time
Min
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
Output Enable High durning toggle bit polling
Min
20
ns
Min
0
ns
tOEPH
Read Recovery Time Before Write(/OE High to /WE
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note2)
Typ
11
us
tWHWH2
tWHWH2
Sector Erase Operation (Note2)
Typ
1.6
sec
tVCS
Vcc Setup Time (Note1)
Min
50
us
tRB
Recovery Time from RY//BY
Min
0
ns
Program/ Erase Valid to RY//BY Delay
Min
90
ns
tBUSY
Low)
Word
35
50
ns
Note: 1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more Information
u Alternate /CE Controlled Erase/ Program Operations
PARAMETER SYMBOLS
DESCRIPTION
-90
-120
UNIT
90
120
ns
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note1)
Min
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
20
ns
Min
0
ns
0
ns
Read Recovery Time Before Write(/OE High to /WE
0
ns
tGHEL
tGHEL
tWLEL
tWS
/WE Setup Time
Min
tEHWH
tWH
/WE Hold Time
Min
tELEH
tCP
/CE Pulse Width
Min
tEHEL
tCPH
/CE Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note2)
Typ
11
us
tWHWH2
tWHWH2
Sector Erase Operation (Note2)
Typ
1.6
sec
Low)
Word
0
35
ns
50
ns
Note:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more Information .
URL:www.hbe.co.kr
REV1.0 (June, 2003)
6
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
u READ OPERATIONS TIMING
u RESET TIMING
URL:www.hbe.co.kr
REV1.0 (June, 2003)
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HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
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REV1.0 (June, 2003)
8
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL:www.hbe.co.kr
REV1.0 (June, 2003)
9
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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REV1.0 (June, 2003)
10
HANBit Electronics Co., Ltd.
HANBit
HMF6M32M6V
PACKAGE DIMENSIONS
2.54 mm
MIN
0.25 mm MAX
1.27 mm
Gold: 1.04±0.10 mm
Solder: 0.914±0.10 mm
1.27±0.08 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF6M32M6V-90
24MByte
6MX 32bit
72 Pin-SIMM
HMF6M32M6V-120
24MByte
6MX 32bit
72 Pin-SIMM
URL:www.hbe.co.kr
REV1.0 (June, 2003)
11
Component
Vcc
Speed
6EA
3.0V
90ns
6EA
3.0V
120ns
Number
HANBit Electronics Co., Ltd.