HANBit HMF6M32M6V FLASH-ROM MODULE 24MByte (6M x 32-Bit) ,72pin-SIMM, 3.0V Part No. HMF6M32M6V GENERAL DESCRIPTION The HMF6M32M6V is a high-speed flash read only memory (FROM) module containing 12,582,912 words organized in a x32bit configuration. The module consists of six 2M x 16 FROM mounted on a 72-pin, both-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state -machine, which controls the erase and programming circuitry. Write cycles also internally latch address es and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.0V DC power supply. FEATURES PIN ASSIGNMENT w Access time : 90, 120ns PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-density 24MByte design 1 Vss 25 DQ17 49 /WE w High-reliability, low-power design 2 /RESET 26 DQ18 50 A18 w Single + 3V ± 0.3V power supply 3 DQ0 27 DQ19 51 A17 w Easy memory expansion 4 DQ1 28 DQ20 52 A16 5 DQ2 29 DQ21 53 A15 6 DQ3 30 Vcc 54 A14 7 DQ4 31 DQ22 55 A13 8 DQ5 32 DQ23 56 A12 9 DQ6 33 /CE_1H 57 A11 10 Vcc 34 /CE_2H 58 A10 11 DQ7 35 DQ24 59 Vcc 12 /CE_1L 36 DQ25 60 A9 13 /CE_2L 37 DQ26 61 A8 14 DQ8 38 DQ27 62 A7 15 DQ9 39 Vss 63 A6 16 DQ10 40 DQ28 64 A5 17 DQ11 41 DQ29 65 A4 18 DQ12 42 DQ30 66 A3 19 DQ13 43 DQ31 67 A2 20 DQ14 44 NC 68 A1 21 DQ15 45 NC 69 A0 22 NC 46 /CE_3L 70 A20 23 /CE_3H 47 A19 71 NC 24 DQ16 48 /OE 72 Vss w Hardware reset pin(RESET#) w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cy cle w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 90ns access - 90 120ns access -120 w Packages 72-pin SIMM M 72-PIN SIMM TOP VIEW URL:www.hbe.co.kr REV1.0 (June, 2003) 1 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 – A20 32 21 A0-20 /WE /WE /OE /CE_1L DQ 0-15 A0-20 DQ16-31 /WE U1 /OE /CE A0-20 DQ 16-31 DQ 0-15 /CE_2L /WE /WE /Reset /Reset A0-20 A0-20 /OE /OE /CE_3L /CE /Reset /WE /OE U2 /CE /WE /CE_1H /Reset A0-20 /OE U3 /CE /Reset /WE DQ16-31 DQ0-15 /WE U5 /OE DQ16-31 U4 /CE /CE_2H DQ16-31 DQ 16-31 U6 /CE_3H /CE /Reset /Reset /CE_3L Option resister URL:www.hbe.co.kr REV1.0 (June, 2003) 2 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VCC -0.5V to +4.0V A9, /OE, /RESET, /WP_ACC Relative to Vss VIN,OUT -0.5V to +12.5V Voltage on All other Pins Relative to Vss VIN,OUT -0.5V to +4.0V PD 6W o -65 C to +150oC Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature TSTG Operating Temperature ( Industrial ) -40oC to +85oC -55oC to +125oC TA Operating Temperature ( Extended ) w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Supply Voltage VCC 2.7V 3.0V 3.6V Ground VSS 0 0 0 Input High Voltage VIH 2.0 - Vcc+0.3V Input Low Voltage VIL -0.5 - 0.8V DC CHARACTERISTICS (CMOS Compatible) PARAMETER DESCRIPTION TEST CONDITIONS ILI Input Load Current VIN=Vss to Vcc, Vcc=Vcc max MIN TYP. MAX UNIT ±3.0 uA ILIT A9 Input Load Current Vcc= Vcc max ; A9=12.5V 35 uA ILO Output Leakage Current VOUT= Vss to Vcc, Vcc= Vcc max ±1.0 uA ICC1 Vcc Active Read Current /CE=VIL, /OE=VIH 5MHZ 60 96 (Note1) Word Mode 1MHZ 12 24 /CE=VIL, /OE=VIH 90 180 mA Vcc=Vcc max ; /CE,/Reset=Vcc±0.3V 1.2 30 uA Vcc=Vcc max ; /Reset=Vss±0.3V 1.2 30 uA 1.2 30 uA Vcc Active Write Current ICC2 (Note 2 and 4) ICC3 ICC4 Vcc Standby Current Vcc Standby Current During Reset ICC5 Automatic Sleep VIH=Vcc±0.3V; Mode(Note3) VIL=Vss±0.3V mA VIL Input Low Voltage -0.5 0.8 V VIH Input High Voltage 0.7xVcc Vcc+0.3 V 11.5 12.5 V 0.45 V Voltage for Autoselect and VID Temporary Unprotect VOL Output Low Voltage VOH1 Output High Voltage VOH2 VLKO Vcc=3.0V ± 10% IOL=4.0mA, Vcc=Vcc min IOH=-2.0mA, Vcc=Vcc min 0.85xVcc V IOH=-100uA, Vcc= Vcc min Vcc-0.4 V Low Vcc Lock-Out Voltage URL:www.hbe.co.kr REV1.0 (June, 2003) 2.3 3 2.5 HANBit Electronics Co., Ltd. V HANBit HMF6M32M6V Note : 1. The Icc current listed is typically less 2mA/MHz, with /OE at V IH. 2. Icc active while Embedded Erase or Embedded Program is progress. 3. Automatic sleep mode enables the low power mode when addresses remain stable for t ACC+30ns. Typical sleep mode current is 200nA. 4. Not 100% tested. LATCHUP CHARACTERISTICS DESCRIPTION Input Voltage with respect to Vss on all pins except I/O Pins (Including A9,/OE, and /Reset) Input Voltage with respect to Vss on all I/O Pins Vcc Current MIN MAX -1.0V 12.5V -1.0V Vcc+1.0V -100mA +100mA Includes all pins except Vcc. Test conditions: Vcc=3.0V, one pin at a time. DATA RETENTION PARAMETER TEST CONDITIONS Minimum Pattern Data MIN UNIT O 10 Years O 20 Years 150 C Retention Time 125 C ERASE AND PROGRAMMING PERFORMANCE TYP PARAMETER (NOTE1) MAX (NOTE2) UNIT COMMENTS 15 sec Excludes 00h programming prior to sec erasure (Note4) Sector Erase Time 1.6 Chip Erase Time 112 Word Programming Time 11 360 us Chip Programming Time (Word Mode) 24 72 sec Excludes system level overhead (Note5) (Note3) Notes : O 1. Typical program and erase times assume the following conditions: 25 C, 3.0V Vcc, 1,000,000 cycles. Additionally programming typical assume checkerboard pattern. O 2. Under worst case conditions of 90 C, Vcc=2.7V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, sin ce most bytes program faster than the maximum program times listed 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two-or four-bus-cycle sequence for the program command. See table 9 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. URL:www.hbe.co.kr REV1.0 (June, 2003) 4 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V SOP/TSOP PIN CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN TEST SETUP TYP. MAX UNIT VIN = 0 36 45 pF VOUT = 0 51 72 pF VIN = 0 45 54 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : 1. Sampled, not 100% tested o 2.Test conditions TA = 25 C, f=1.0 MHz. TEST SPECIFICATIONS TEST CONDITION 80R -90/ -120 Output load UNIT 1TTL gate Output load capacitance, 30 CL (Including jig capacitance) Input rise and fall times 100 pF 5 ns 0.0 - 3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels 3.3V IN3064 or Equivalent Device Under Test CL URL:www.hbe.co.kr REV1.0 (June, 2003) 6.2kW 5 2.7kW Diodes = IN3064 or Equivalent HANBit Electronics Co., Ltd. HANBit HMF6M32M6V AC CHARACTERISTICS u Erase / Program Operations PARAMETER SYMBOLS DESCRIPTION JEDEC Standard tAVAV tWC Write Cycle Time (Note1) Min tAVWL tAS Address Setup Time Min -90 -120 UNIT 90 120 ns 0 ns tWLAX tAH Address Hold Time Min 45 50 ns tDVWH tDS Data Setup Time Min 45 50 ns tWHDX tDH Data Hold Time Min 0 ns Output Enable High durning toggle bit polling Min 20 ns Min 0 ns tOEPH Read Recovery Time Before Write(/OE High to /WE tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note2) Typ 11 us tWHWH2 tWHWH2 Sector Erase Operation (Note2) Typ 1.6 sec tVCS Vcc Setup Time (Note1) Min 50 us tRB Recovery Time from RY//BY Min 0 ns Program/ Erase Valid to RY//BY Delay Min 90 ns tBUSY Low) Word 35 50 ns Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information u Alternate /CE Controlled Erase/ Program Operations PARAMETER SYMBOLS DESCRIPTION -90 -120 UNIT 90 120 ns JEDEC Standard tAVAV tWC Write Cycle Time (Note1) Min tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 50 ns tDVEH tDS Data Setup Time Min 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 20 ns Min 0 ns 0 ns Read Recovery Time Before Write(/OE High to /WE 0 ns tGHEL tGHEL tWLEL tWS /WE Setup Time Min tEHWH tWH /WE Hold Time Min tELEH tCP /CE Pulse Width Min tEHEL tCPH /CE Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Note2) Typ 11 us tWHWH2 tWHWH2 Sector Erase Operation (Note2) Typ 1.6 sec Low) Word 0 35 ns 50 ns Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information . URL:www.hbe.co.kr REV1.0 (June, 2003) 6 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V u READ OPERATIONS TIMING u RESET TIMING URL:www.hbe.co.kr REV1.0 (June, 2003) 7 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL:www.hbe.co.kr REV1.0 (June, 2003) 8 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL:www.hbe.co.kr REV1.0 (June, 2003) 9 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL:www.hbe.co.kr REV1.0 (June, 2003) 10 HANBit Electronics Co., Ltd. HANBit HMF6M32M6V PACKAGE DIMENSIONS 2.54 mm MIN 0.25 mm MAX 1.27 mm Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27±0.08 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF6M32M6V-90 24MByte 6MX 32bit 72 Pin-SIMM HMF6M32M6V-120 24MByte 6MX 32bit 72 Pin-SIMM URL:www.hbe.co.kr REV1.0 (June, 2003) 11 Component Vcc Speed 6EA 3.0V 90ns 6EA 3.0V 120ns Number HANBit Electronics Co., Ltd.