HMC770LP4BE v01.0310 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Typical Applications Features The HMC770LP4BE is ideal for: High Output IP3: +40 dBm • Cellular / PCS / 3G Single Positive Supply: +5V • Fixed Wireless & WLAN Low Noise Figure: 2.5 dB [1] • CATV, Cable Modem & DBS Differential RF I/O’s • Microwave Radio & Test Equipment 20 Lead 4x4 mm SMT Package: 16mm2 • IF & RF Applications General Description Functional Diagram The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure. Differential I/Os make this amplifier ideal for transimpedance and SAW filter applications, and in transceivers where the IF path must be handled differentially for improved noise performance. Evaluation PCBs are all available with either SMA (50Ω) or Type F (75Ω) connectors. Electrical Specifi cations, TA = +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω [2] Min. Typ. Max. Min. Typ. Max. Parameter Units Zo = 50 Ohms Frequency Range Gain [2] Zo =75 Ohms 0.04 - 1 12 Gain Variation Over Temperature 16.5 12 0.04 - 1 GHz 16 dB 0.006 0.008 dB / °C Input Return Loss 17 15 dB Output Return Loss 18 15 dB 23.5 dBm 37.5 dBm Output Power for 1 dB Compression (P1dB) 20 23 Output Third Order Intercept (IP3) (Pout = 0 dBm per tone, 1 MHz spacing) 40 Noise Figure [2] 2.5 Transimpedance Input Referred Current Noise [3] 21 4 - 2.75 4 700 - dB Ohms 6 pA / √Hz Supply Current 1 (Idd1) 136 160 136 160 mA Supply Current 2 (Idd2) 134 160 134 160 mA [1] 1:1 Balun losses have NOT been removed from measurements. See list of materials for eval PCB for the type of balun. [2] See application circuit [3] Includes balun loss, no photo diode. See list of materials for eval PCB for the type of balun. 8 - 202 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Gain & Return Loss [1] Gain vs. Temperature [1] 10 0 -10 +25C +85C -40C 10 5 -20 0 -30 0 0.2 0.4 0.6 0.8 0 1 0.2 FREQUENCY (GHz) 20 15 15 4.5V 5.0V 5.5V 10 5 1 0.8 1 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 10 5 0 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Return Loss vs. Temperature [1] 0 0.2 0.4 0.6 FREQUENCY (GHz) Return Loss vs. Vdd [1] 0 0 -5 -5 +25C +85C -40C -10 S22 RETURN LOSS (dB) RETURN LOSS (dB) 0.8 Gain vs. Rbias 20 GAIN (dB) GAIN (dB) Gain vs. Vdd [1] 0.4 0.6 FREQUENCY (GHz) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 15 S21 S11 S22 GAIN (dB) RESPONSE (dB) 8 20 20 -15 -20 S11 -25 4.5V 5.0V 5.5V -10 S22 -15 S11 -20 -25 -30 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] Rbias=R1=200 Ohms. See application circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 - 203 HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data 0 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms -5 S22 ISOLATION (dB) RETURN LOSS (dB) -5 -10 -15 -20 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms -15 -20 -25 -30 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Noise Figure vs. Temperature for Low Frequencies [1][2] Noise Figure vs. Temperature [1] 8 8 +25C +85C -40C 6 NOISE FIGURE (dB) NOISE FIGURE (dB) -10 S11 -25 4 2 +25C +85C -40C 6 4 2 0 0 0 0.2 0.4 0.6 0.8 0 1 25 50 75 100 125 150 175 200 FREQUENCY (MHz) FREQUENCY (GHz) Noise Figure vs. Vdd [1] Noise Figure vs. Vdd for Low Frequencies [1][2] 8 NOISE FIGURE (dB) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Isolation vs. Rbias 0 8 4.5V 5.0V 5.5V 6 NOISE FIGURE (dB) 8 Return Loss vs. Rbias 4 2 0 4.5V 5.0V 5.5V 6 4 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. 8 - 204 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Noise Figure vs. Rbias for Low Frequencies [2] Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 6 4 2 0 Rbias=1.5k Ohms Rbias=600 Ohms Rbias=200 Ohms 6 4 2 0 0 0.2 0.4 0.6 0.8 1 0 25 50 75 FREQUENCY (GHz) 125 150 175 200 P1dB vs. Vdd [1] 30 25 25 20 20 P1dB (dBm) 30 15 +25C +85C -40C 10 100 FREQUENCY (MHz) P1dB vs. Temperature [1] P1dB (dBm) 8 8 NOISE FIGURE (dB) NOISE FIGURE (dB) 8 4.5V 5.0V 5.5V 15 10 5 5 0 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 P1dB vs. Rbias [1] 30 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Noise Figure vs. Rbias P1dB (dBm) 25 20 15 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 10 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 - 205 HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 50 Ohm Data Output IP3 vs. Temperature [1] 50 45 45 40 40 IP3 (dBm) IP3 (dBm) 50 35 30 35 4.5V 5.0V 5.5V 30 +25C +85C -40C 25 25 20 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Idd vs. Rbias Output IP3 vs. Rbias 400 50 350 45 4.5 V 5.0 V 5.5 V 300 40 Idd (mA) IP3 (dBm) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 Output IP3 vs. Vdd [1] 35 250 200 150 30 100 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 25 50 0 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 200 400 600 800 1000 1200 1400 1600 Rbias (Ohm) [1] Rbias=R1=200 Ohms. See application circuit 8 - 206 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Gain & Return Loss [1] Gain vs. Temperature [1] 20 S21 S11 S22 0 -10 5 -20 -30 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Gain vs. Vdd [1] 0 0.2 20 20 15 15 10 4.5V 5.0V 5.5V 5 0.8 1 0.8 1 0.8 1 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 10 5 0 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Return Loss vs. Temperature [1] 0 0.2 0.4 0.6 FREQUENCY (GHz) Return Loss vs. Vdd [1] 0 0 +25C +85C -40C -10 -15 S11 -20 4.5V 5.0V 5.5V -5 RETURN LOSS (dB) -5 -25 -10 -15 S11 -20 -25 S22 S22 -30 0.4 0.6 FREQUENCY (GHz) Gain vs. Rbias GAIN (dB) GAIN (dB) +25C +85C -40C 10 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 15 GAIN (dB) RESPONSE (dB) 10 RETURN LOSS (dB) 8 20 0 0.2 0.4 0.6 0.8 FREQUENCY (GHz) 1 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) [1] Rbias=R1=200 Ohms. See application circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 - 207 HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Return Loss vs. Rbias 0 Rbias =1.5k Ohms Rbias =600 Ohms Rbias =200 Ohms RETURN LOSS (dB) -5 -10 S11 -15 -20 -25 S22 -30 0 Noise Figure vs. Temperature 0.2 0.4 0.6 FREQUENCY (GHz) 1 8 +25C +85C -40C 6 NOISE FIGURE (dB) NOISE FIGURE (dB) 0.8 Noise Figure vs. Temperature for Low Frequencies [1][2] [1] 8 4 2 +25C +85C -40C 6 4 2 0 0 0 0.2 0.4 0.6 0.8 0 1 25 50 75 100 125 150 175 200 FREQUENCY (MHz) FREQUENCY (GHz) Noise Figure vs. Vdd [1] Noise Figure vs. Vdd for Low Frequencies [1][2] 8 8 4.5V 5.0V 5.5V 6 NOISE FIGURE (dB) NOISE FIGURE (dB) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 4 2 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 4.5V 5.0V 5.5V 6 4 2 0 0 25 50 75 100 125 150 175 200 FREQUENCY (MHz) [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. 8 - 208 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Noise Figure vs. Rbias for Low Frequencies [1][2] NOISE FIGURE (dB) NOISE FIGURE (dB) Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 6 4 2 Rbias=1.5k Ohms Rbias=600 Ohms Rbias=200 Ohms 6 4 2 0 0 0 0.2 0.4 0.6 0.8 0 1 25 50 100 125 150 175 200 P1dB vs. Vdd [1] 30 30 25 25 20 20 P1dB (dBm) P1dB (dBm) P1dB vs. Temperature [1] 15 +25C +85C -40C 10 75 FREQUENCY (MHz) FREQUENCY (GHz) 15 4.5V 5.0V 5.5V 10 5 5 0 8 8 8 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Noise Figure vs. Rbias [1] Rbias=R1=200 Ohms. See application circuit. [2] See application circuit for the tune for low frequencies. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 - 209 HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz 75 Ohm Data Output IP3 vs. Temperature [1] P1dB vs. Rbias 25 45 20 40 IP3 (dBm) P1dB (dBm) 50 15 10 35 30 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 5 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Output IP3 vs. Vdd [1] 0 45 45 40 40 IP3 (dBm) 50 35 30 0 0.2 0.4 0.4 0.6 FREQUENCY (GHz) 0.8 1 0.8 1 Rbias = 1.5k Ohms Rbias = 600 Ohms Rbias = 200 Ohms 35 30 4.5V 5.0V 5.5V 25 0.2 Output IP3 vs. Rbias 50 20 +25C +85C -40C 25 0 IP3 (dBm) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 30 25 0.6 0.8 1 20 0 0.2 0.4 0.6 FREQUENCY (GHz) FREQUENCY (GHz) Input Referred Current Noise vs. Frequency [1] 20 NOISE (pA/ √ Hz) 15 10 5 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 [1] Rbias=R1=200 Ohms. See application circuit 8 - 210 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Absolute Maximum Ratings 5.5 Vdc RF Input Power (RFIN) +20 dBm Channel Temperature 150 °C Continuous Pdiss (T=85 °C) (derate 33.21 mW/ °C Above +85 °C) 2.16W Thermal Resistance (channel to ground paddle) 30.11 °C/W Storage Temperature -65 to 150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 8 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Drain Bias Voltage 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC770LP4BE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL3 [2] Package Marking [1] H770 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 - 211 HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Pin Descriptions AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 8 - 212 Pin Number Function Description 1, 5 INN, INP This pin is DC coupled An off chip DC blocking capacitor is required 11, 15 OUTN, OUTP This pin is DC coupled An off chip DC blocking capacitor is required 9, 17 RFCN, RFCP RF Choke and DC Bias (Vdd) for the output stage 2 - 4, 6 - 8, 10, 12 - 14, 16, 18, 19 N/C These pins may be left unconnected. 20 BIAS This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. Package Base GND Package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit for Transimpedance Amplifi er Mode for use with 75 Ohm Evaluation Board For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Application Circuit for Differential Amplifi er Mode for use with either 50 or 75 Ohm Evaluation Board Components for Selected Options Tune Option 50 Ohm 50 Ohm Low Frequency 75 Ohm 75 Ohm Low Frequency Evaluation PCB Number 125980 127930 121737 127931 J1, J2 T1, T2 [1] SMA connector ETC 1-1-13 ETC1-1T-5TR AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 F connector ETC 1-1-13 ETC1-1T-5TR [1] 1:1 Balun Balun ETC1-1-13 is recommended for broadband and high frequency applications with the limitation that ETC1-1-13 degrades noise performance below 200 MHz. Balun ETC1-1T-5TR is recommended for low frequency applications with the limitation that ETC1-1T-5TR degrades gain above 500 MHz. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 - 213 HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Evaluation PCB - 50 Ohm AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 List of Materials for Evaluation PCB [1] Item Description J1, J2 Johnson SMA Connector J3 - J5 DC Pin C1 - C4, C7, C13 10 nF Capacitor, 0603 Pkg. C5, C6, C8 - C12, C16 100 pF Capacitor, 0402 Pkg. C10, C12 10 nF Capacitor, 0402 Pkg. C14, C15 2.2 μF Capacitor, Tantalum L1, L2 1 uH Inductor, 0805 Pkg. R1 (Rbias) 200 Ohm Resistor, 0402 Pkg. R2, R3 0 Ohm Resistor, 0805 Pkg. T1, T2 [2] 1:1 Transformer U1 HMC770LP4BE Gain Block Amplifier PCB [3] 125978 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table “Components for Selected Options.” [2] Please refer to “Components for Selected Options” table for values [3] Circuit Board Material: Rogers 4350 8 - 214 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC770LP4BE v01.0310 GaAs pHEMT 50 / 75 Ohm DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz Evaluation PCB - 75 Ohm List of Materials for Evaluation PCB [1] Item Description J1, J2 F-Connector J3 - J5 DC Pin C1 - C4, C7, C13 10 nF Capacitor, 0603 Pkg. C5, C6, C8 - C12, C16 100 pF Capacitor, 0402 Pkg. C10, C12 10 nF Capacitor, 0402 Pkg. C14, C15 2.2 μF Capacitor, Tantalum L1, L2 1 uH Inductor, 0805 Pkg. R1 (Rbias) 200 Ohm Resistor, 0402 Pkg. R2, R3 0 Ohm Resistor, 0805 Pkg. T1, T2 [2] 1:1 Transformer U1 HMC770LP4BE Gain Block Amplifier PCB [3] 121735 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 75 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 [1] When requesting an evaluation board, please reference the appropriate evaluation PCB number listed in the table “Components for Selected Options.” [2] Please refer to “Components for Selected Options” table for values [3] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 - 215