N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H548 █ SWITCHING AND AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………500mW 1―Collector，C 2―Base，B 3―Emitter，E VCBO——Collector-Base Voltage………………………………30V VCEO——Collector-Emitter Voltage……………………………35V V EB O ——Emitter-Base Voltage………………………………5V I C ——Collector Current……………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCBO Collector-Base Breakdown Voltage BVCEO Unit Test Conditions 30 V IC=100μA, IE=0 Collector-Emitter Breakdown Voltage 30 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=1mA，IC=0 ICBO Collector Cut-off Current HFE DC Current Gain VCE(sat1) Collector- Emitter Saturation Voltage Max 15 110 VCE(sat2) VBE(sat1) Typ Base-Emitter Saturation Voltage VBE(sat2) 580 nA 800 VCB=30V, IE=0 VCE=5V, IC=2mA 90 250 mV IC=10mA, IB=0.5mA 200 600 mV IC=100mA, IB=5mA 0.7 1 V IC=10mA, IB=0.5mA 0.9 1.2 V IC=100mA, IB=5mA 660 700 mV VCE=5V, IC=2mA VCE=5V, IC=10mA VCB=10V, IE=0 f=100MHz VCE=5V, IC=200μA f=1KHz，Rg=2KΩ VBE(ON1) Base-Emitter On Voltage fT Current Gain-Bandwidth Product 300 MHz Cob Output Capacitance 2.5 pF NF Noise Figure 2 10 dB █ hFE Classification A B C 110—220 200—450 420—800 N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H548