P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H556 █ SWITCHING AND AMPLIFIER █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………500mW 1―Collector，C 2―Base，B 3―Emitter，E VCBO——Collector-Base Voltage………………………………-80V VCEO——Collector-Emitter Voltage……………………………-65V V EBO ——Emitter-Base Voltage………………………………-5V I C ——Collector Current……………………………………-100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min ICBO Collector Cut-off Current HFE DC Current Gain VCE(sat1) Collector- Emitter Saturation Voltage 110 VCE(sat2) VBE(sat1) Typ Base-Emitter Saturation Voltage VBE(sat2) -600 Max Unit Test Conditions -15 nA VCB=-30V, IE=0 800 VCE=-5V, IC=-2mA -90 -300 mV IC=-10mA, IB=-0.5mA -250 -650 mV IC=-100mA, IB=-5mA -0.7 V IC=-10mA, IB=-0.5mA -0.9 V IC=-100mA, IB=-5mA -660 VBE(ON) Base-Emitter On Voltage fT Current Gain-Bandwidth Product 150 NF Noise Figure 2 -750 mV MHz 10 dB █ hFE Classification A B C 110—220 200—450 420—800 VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA f=100MHz VCE=-5V, IC=-200μA f=1KHz，Rg=2KΩ