NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA05 █ APPLICATIONS General Purpose Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO——Collector-Base Voltage………………………………60V VCEO——Collector-Emitter Voltage……………………………60V V EB O ——Emitter-Base Voltage………………………………4V I C ——Collector Current……………………………………500mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Characteristics Min BVCEO Collector-Emitter Breakdown Voltage 60 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 4 V IE=100μA，IC=0 HFE（1） DC Current Gain 50 VCE=1V, IC=10mA HFE（2） DC Current Gain 50 VCE=1V, IC=100mA VCE(sat) Collector- Emitter Saturation Voltage VBE（on） Base-Emitter On Voltage Typ Max Uni t Symbol Test Conditions 0.25 V IC=100mA, IB=10mA 1.2 V VCE=1V, IC=100mA ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0 ICEO Collector Cut-off Current 100 nA VCE=60V, IB=0 fT Current Gain-Bandwidth Product 100 MHz VCE=20V,IC=10mA, f=100MHz