Shantou Huashan Electronic Devices Co.,Ltd. HBTA16A60 ＩＮＮＥＲ ＩＮＳＵＬＡＴＥＤ ＴＹＰＥ ＴＲＩＡＣ （ＩＩ ＴＯ－２２０ ＰＡＣＫＡＧＥ） █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=16A) * High Commutation dv/dt *Isolation Voltage（VISO =2500V AC） █ General Description The Triac HBTA16A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control,and static switching relay. █ Absolute Maximum Ratings（Ta=25℃） T stg ——Storage Temperature……………………………………………………………… －40~125℃ T j ——Operating Junction Temperature …………………………………………………… －40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT（RMS）——R.M.S On-State Current（Ta=68℃）………………………………………………… 16A VG M ——Peak Gate Voltage ………………………………………………………………… 10V I G M— — P e a k G a t e C u r r e n t … … … … … … … … … … … … … … … … … … … … … … … 2 . 0 A ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………………… 155/170A V ——RMS Isolation Breakdown Voltage……………………………………………………… 2500V ISO █ Electrical Characteristics （Ta=25℃） Symbol Items Min. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 2.0 mA VTM Peak On-State Voltage 1.4 V VD=VDRM, Single Phase,Half Wave, TJ=125℃ IT=25A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 30 mA VD =6V, RL =10 ohm I- GT1 Gate Trigger Current（Ⅱ） 30 mA VD =6V, RL =10 ohm I-GT3 Gate Trigger Current（Ⅲ） 30 mA VD =6V, RL =10 ohm V+ G T1 Gate Trigger Voltage（Ⅰ） 1.5 V VD =6V, RL =10 ohm V- GT1 Gate Trigger Voltage（Ⅱ） 1.5 V VD =6V, RL =10 ohm V- GT3 Gate Trigger Voltage（Ⅲ） 1.5 V VD =6V, RL =10 ohm VGD 0.2 V (dv/dt)c Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation 10 V/µS Rth(j-c) Thermal Resistance T J=125℃,VD =1/2VDRM TJ=125℃,VD=2/3VDRM (di/dt)c=-8.0A/ms Junction to case IH Holding Current 3.0 25 ℃/W mA Shantou Huashan Electronic Devices Co.,Ltd. █ Performance Curves HBTA16A60 Shantou Huashan Electronic Devices Co.,Ltd. HBTA16A60