SEMIHOW HTS137-600

HTS137-600
HTS137-600
INSULATION TYPE TRIAC (TO-220F)
VDRM
= 600 V
IT(RMS) = 8.0A
FEATURES
3.T2
Symbol
‰
‰
‰
‰
Repetitive Peak Off-State Voltage: 600V
R.M.S On-state Current (IT(RMS)=8A)
High Commutation dv/dt
Isolation Voltage (VISO=1500VAC)
2.Gate
1.T1
TO-220F
1. T1
2. Gate
3. T2
General Description
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings
(Ta=25℃)
Symbol
Parameter
Value
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(RMS)
R.M.S On-State Current (Tc = 76℃)
8.0
A
ITSM
Surge On-State Current
(One Cycle, 50/60Hz, Peak, Non Repetitive)
70/77
A
VGM
Peak Gate Voltage
10
V
IGM
Peak Gate Current
2.0
A
PGM
Peak Gate Power Dissipation
5.0
W
VISO
Isolation Breakdown Voltage (RMS AC 1min)
1500
V
TSTG
Storage Temperature Range
-40 to +125
℃
Tj
Operating Temperature
-40 to +125
℃
◎ SEMIHOW REV.1.0 Jan 2006
Symbol
Parameter
IGT
Gate Trigger Current
VGT
Gate Trigger Voltage
VGD
(dv/dt)c
IH
(Ta=25℃)
Test Conditions
Min
Typ
VD=6V, RL=10Ω
VD=6V, RL=10Ω
Non Trigger Gate
Tj =125℃, VD=1/2VDRM
Voltage
Critical Rate of Rise of
Tj =125℃, VD=2/3VDRM
Off-State Voltage at
(di/dt)c=-3A/ms
Communication
Max
Units
25
mA
1.5
V
0.2
V
5.0
V/uS
Holding Current
10.0
VD=VDRM, Single Phase, Half Wave,
IDRM
Repetitive Peak OffState Current
VTM
Peak On-State Voltage IT=6A, Inst, Measurement
Tj =125℃
mA
0.5
mA
1.6
V
Max
Units
3.8
℃/W
Thermal Characteristics
Symbol
RTH(j-c)
Parameter
Thermal Resistance
Test Conditions
Junction to Case
Min
Typ
◎ SEMIHOW REV.1.0 Jan 2006
HTS137-600
Electrical Characteristics
HTS137-600
Performance Curves
Fig 1. Gate Characteristics
Fig 2.On-State Voltage
101
On-state Current (A)
Gate Voltage (V)
101
100
100
10-1
10-1
101
102
0.5
103
1.0
1.5
2.0
2.5
3.0
3.5
On-state Voltage (V)
Gate Current (mA)
Fig 4. On State Current
vs. Maximum Power Dissipation
Fig 3. Gate Trigger Voltage
vs. Junction Temperature
12
10
Power Dissipation (W)
VGT (t℃)
VGT (25℃)
11
1
10
9
8
7
6
5
4
3
2
1
0.1
0
-50
0
50
100
0.0
150
2
3
4
5
6
7
8
9
10
Fig 6. Surge On-State Current
Rating (Non-Repetitive)
Fig 5. On State Current
vs. Allowable Case Temperature
90
Surge On-State Current (A)
130
Allowable Case Temp (℃)
1
RMS On-State Current (A)
Junction Temperature (℃)
120
110
100
90
80
70
0
1
2
80
70
60
50
40
30
20
10
0
3
4
5
6
7
RMS On-State Current (A)
8
9
10
100
101
102
Time (Cycles)
◎ SEMIHOW REV.1.0 Jan 2006
10
I+GT1
I-GT1
1
I-GT3
I+GT3
Transient Thermal
Impedance (℃/W)
10
VGT (t℃)
VGT (25℃)
HTS137-600
Fig8. Transient Thermal
Impedance
Fig 7. Gate Trigger Current
vs. Junction Temperature
0.1
-50
0
50
100
150
1
10-2
10-1
Junction Temperature (℃)
101
100
102
Time (Sec)
Fig 7. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
A
RG
A
6V
RG
6V
V
V
Test Procedure I
Test Procedure II
10Ω
A
RG
6V
V
Test Procedure III
◎ SEMIHOW REV.1.0 Jan 2006
HTS137-600
Package Dimensions
HTS137-600
(TO-220F)
Dimensions in Millimeters
◎ SEMIHOW REV.1.0 Jan 2006