Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=8A) * High Commutation dv/dt █ General Description The Triac HBTA8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings(Ta=25℃) T stg ——Storage Temperature……………………………………………………………… -40~125℃ T j ——Operating Junction Temperature …………………………………………………… -40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT (RMS)——R.M.S On-State Current(Ta=89℃)………………………………………………… 8A VG M ——Peak Gate Voltage ………………………………………………………………… 10V I G M— — P e a k G a t e C u r r e n t … … … … … … … … … … … … … … … … … … … … … … … 2 . 0 A ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A V ——RMS Isolation Breakdown Voltage……………………………………………………… 2500V ISO █ Electrical Characteristics (Ta=25℃) Symbol Items Min. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 2.0 mA VTM Peak On-State Voltage 1.4 V VD=VDRM, Single Phase,Half Wave, TJ=125℃ IT=12A, Inst. Measurement I+GT1 Gate Trigger Current(Ⅰ) 30 mA VD =6V, RL =10 ohm I- GT1 Gate Trigger Current(Ⅱ) 30 mA VD =6V, RL =10 ohm I-GT3 Gate Trigger Current(Ⅲ) 30 mA VD =6V, RL =10 ohm V+ GT1 Gate Trigger Voltage(Ⅰ) 1.5 V VD =6V, RL =10 ohm V- GT1 Gate Trigger Voltage(Ⅱ) 1.5 V VD =6V, RL =10 ohm V- GT3 Gate Trigger Voltage(Ⅲ) 1.5 V VD =6V, RL =10 ohm VGD 0.2 V 10 V/µS Rth(j-c) Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation Thermal Resistance T J=125℃,VD =1/2VDRM TJ=125℃,VD=2/3VDRM (di/dt)c=-4.0A/ms Junction to case IH Holding Current (dv/dt)c 3.7 15 ℃/W mA Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 █ Performance Curves Gate Characteristics Fig 2. On-State Voltage On-state Current [A] Gate Voltage (V) Fig 1. 10 1 0.1 101 102 Gate Current 103 (mA) On-State Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃] RMS On-State Current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature 100 RMS On-State Current [A] 101 Time(Cycles) 102 Shantou Huashan Electronic Devices Co.,Ltd. HBTA8A60 Fig 7. Gate Trigger Current vs. Fig 8. Transient Thermal Impedance Junction Temperature Transient Thermal Impedance [℃/W ] Junction Temperature [℃] Time(sec) Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω 10Ω Test ProcedureⅠ Test ProcedureⅡ Test ProcedureⅢ