ETC STP16A60

STP16A60
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Symbol
○
Features
2.T2
▼▲
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 16 A )
◆ High Commutation dv/dt
◆ Non-isolated Type
◆
○
◆
1.T1
3.Gate
○
TO-220
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature modulation control, lighting control and static switching relay.
1
Absolute Maximum Ratings
Symbol
2
3
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
600
V
16
A
155/170
A
I2 t
120
A2 s
Peak Gate Power Dissipation
5.0
W
Average Gate Power Dissipation
0.5
W
IGM
Peak Gate Current
2.0
A
VGM
Peak Gate Voltage
10
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
2.0
g
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
TC = 98 °C
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2 t
PGM
PG(AV)
TJ
TSTG
Mass
Feb, 2003. Rev. 2
1/5
[email protected] Semiconductor Co., Ltd., All rights reserved.
STP16A60
Electrical Characteristics
Symbol
Conditions
Ratings
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
─
─
2.0
mA
VTM
Peak On-State Voltage
IT = 25 A, Inst. Measurement
─
─
1.4
V
─
─
30
─
─
30
I+GT1
Ⅰ
I -GT1
Ⅱ
I -GT3
Ⅲ
─
─
30
V+GT1
Ⅰ
─
─
1.5
V-GT1
Ⅱ
─
─
1.5
V-GT3
Ⅲ
─
─
1.5
VGD
(dv/dt)c
IH
Rth(j-c)
2/5
Items
Gate Trigger Current
Gate Trigger Voltage
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
mA
V
Non-Trigger Gate Voltage
TJ = 125 °C, VD = 1/2 VDRM
0.2
─
─
V
Critical Rate of Rise Off-State
Voltage at Commutation
TJ = 125 °C, [di/dt]c = -8.0 A/ms,
VD=2/3 VDRM
10
─
─
V/㎲
─
25
─
mA
─
─
1.4
°C/W
Holding Current
Thermal Impedance
Junction to case
STP16A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
2
VGM (10V)
1
10
On-State Current [A]
PGM (5W)
PG(AV) (0.5W)
25 ℃
IGM (2A)
Gate Voltage [V]
10
0
10
o
TJ = 125 C
1
10
o
TJ = 25 C
0
10
10
VGD (0.2V)
-1
1
2
10
0.5
3
10
10
1.0
1.5
3.0
3.5
130
20
o
θ
2π
θ
14
360°
12
θ : Conduction Angle
10
θ = 90
o
θ = 60
o
θ = 30
o
o
π
16
θ = 180 o
θ = 150
o
θ = 120
Allowable Case Temperature [ C]
18
Power Dissipation [W]
2.5
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On State Current vs.
Maximum Power Dissipation
8
6
4
2
0
120
110
100
π
90
θ
2π
θ
80
360°
θ : Conduction Angle
70
θ = 30
o
θ
θ
θ
θ
θ
o
= 60
o
= 90
o
= 120
o
= 150 o
= 180
60
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
RMS On-State Current [A]
8
10
12
14
16
18
20
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
200
150
o
100
50Hz
V
o
VGT (25 C)
60Hz
VGT (t C)
Surge On-State Current [A]
2.0
On-State Voltage [V]
Gate Current [mA]
_
GT3
1
V
V
+
GT1
_
GT1
50
0
0
10
1
10
Time (cycles)
2
10
0.1
-50
0
50
100
150
o
Junction Temperature [ C]
3/5
STP16A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 8. Transient Thermal Impedance
10
o
o
IGT (t C)
IGT (25 C)
o
Transient Thermal Impedance [ C/W]
10
1
I
+
GT1
I
I
0.1
-50
0
50
_
GT1
_
GT3
100
1
0.1
-2
10
150
-1
0
10
o
1
10
10
Time (sec)
Junction Temperature [ C]
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
▼▲
6V
▼▲
●
A
V
4/5
10Ω
▼▲
●
6V
RG
A
V
●
6V
RG
A
V
●
●
●
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
RG
2
10
STP16A60
TO-220 Package Dimension
Dim.
mm
Typ.
Min.
9.7
6.3
9.0
12.8
1.2
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Max.
10.1
6.7
9.47
13.3
1.4
Inch
Typ.
Min.
0.382
0.248
0.354
0.504
0.047
1.7
2.5
0.067
0.098
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
φ
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
3.6
E
B
Max.
0.398
0.264
0.373
0.524
0.055
0.142
H
A
φ
I
C1.0
F
C
M
L
G
1
D
1. T1
2. T2
3. Gate
2
3
J
N
O
K
5/5