HFP740 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. 1- G 2-D 3-S █ Features • 10A, 400V, RDS(on) <0.55Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF740 █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg ——Storage Temperature ------------------------------------------------------ -55~150℃ T j ——Operating Junction Temperature -------------------------------------------------- 150℃ V DSS —— Drain-Source Voltage ----------------------------------------------------------400V VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 400V VGSS —— Gate-Source Voltage -------------------------------------------------------------------------- ±20V ID —— Drain Current (Continuous) --------------------------------------------------------------------- 10A PD —— Maximum Power Dissipation --------------------------------------------------------------- 125W IAR —— Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 10 A EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------- 450 mJ EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.4mJ █ Thermal Characteristics Symbol Rthj-case Items Thermal Resistance Junction-case TO-220 Max 1.0 Unit ℃/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 ℃/W Rth c-s Thermal Resistance Case-sink Typ ℃/W 0.5 HFP740 Shantou Huashan Electronic Devices Co.,Ltd. █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate – Body Leakage On Characteristics Gate Threshold Voltage VGS(th) RDS(on) gFS 400 2.0 Static Drain-Source On-Resistance Forward Transconductance 25 V µA ID=250µA ,VGS=0V VDS =400V, VGS=0V 250 ±100 µA nA VDS =320V, VGS=0V,Tj=125℃ VGS= ±20V , VDS =0V 4.0 V VDS = VGS , ID=250µA 0.55 Ω VGS=10V, ID=5A VDS=40V, ID=5A (Note 1) 9.6 S Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance 1800 pF Coss Output Capacitance 195 pF Crss Reverse Transfer Capacitance 45 pF td(on) Turn - On Delay Time 50 nS Rise Time 170 nS Turn - Off Delay Time 260 nS Fall Time 180 nS Qg Total Gate Charge 53 nC Qgs Gate–Source Charge 7 nC Qgd Gate–Drain Charge 17 nC tr td(off) tf Drain-Source Diode Characteristics and Maximun Ratings Continuous Source–Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source–Drain Diode Forward VSD On–Voltage Notes: 1. Pulse Test: Pulse width≤300μS,Duty cycle≤2% 2. Essentially independent of operating temperature 10 A 40 A 2.0 V VDS = 25 V, VGS = 0V, f = 1.0 MHz VDD = 200 V, ID = 10Apk RG= 25 Ω (Note 1,2) VDS=0.8VDSS, ID=10A, VGS = 10 V (Note 1,2) IS=10A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics HFP740 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics HFP740 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics HFP740 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics HFP740