Preliminary BVDSS = 700 V RDS(on) typ = 14.0 Ω HFB1N70S ID = 0.3 A 700V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 1.Gate 2. Drain 3. Source Superior Avalanche Rugged Technology Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area G Lower RDS(ON) : 14 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol S TC=25℃ unless otherwise specified Parameter Value Units 700 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 0.3 A Drain Current – Continuous (TC = 100℃) 0.18 A IDM Drain Current – Pulsed 1.2 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 33 mJ IAR Avalanche Current (Note 1) 0.3 A EAR Repetitive Avalanche Energy (Note 1) 0.25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 2.5 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 0.02 W/℃ -55 to +150 ℃ 300 ℃ * Drain current limited by junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJL Junction-to-Lead -- 50 RθJA Junction-to-Ambient -- 140 Units ℃/W ◎ SEMIHOW REV.A0,Dec 2008 HFB1N70S_Preliminary Dec 2008 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 0.15 A -- 14 17.5 Ω 700 -- -- V ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃ VDS = 700 V, VGS = 0 V -- -- 1 ㎂ VDS = 560 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- -- 175 ㎊ -- -- 30 ㎊ -- -- 5 ㎊ -- 12 30 ㎱ -- 40 140 ㎱ -- 20 60 ㎱ -- 30 80 ㎱ -- -- 6.0 nC -- -- -- nC -- -- -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 350 V, ID = 0.8 A, RG = 25 Ω (Note 4,5) VDS = 560 V, ID = 0.8 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 0.3 ISM Pulsed Source-Drain Diode Forward Current -- -- 1.2 VSD Source-Drain Diode Forward Voltage IS = 0.3 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 190 -- ㎱ Qrr Reverse Recovery Charge IS = 0.8 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 0.53 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=96mH, IAS=0.8A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤0.3A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Dec 2008 HFB1N70S_Preliminary Electrical Characteristics TC=25 °C