SEMIWELL SFF7N60_11

SFF7N60
N-Channel MOSFET
Features
◆
RDS(ON) Max 1.2 ohm at VGS = 10V
◆
Gate Charge ( Typical 29.0nC)
◆
Improve dv/dt capability, Fast switching
◆
100% avalanche Tested
General Description
This MOSFET is produced using advanced planar strip
DMOS
technology.
This
latest
technology
has
been
especially designed to minimize on-state resistance have a
high rugged avalanche characteristics. These device are well
suited for high efficiency switch mode power supply active
power factor correction. Electronic lamp based on half bridge
topology
Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified)
Symbol
VDSS
Parameter
Drain-Source Voltage
Drain Current
Ratings
Units
600
V
TC=25℃
7
TC=100℃
4.3
ID
VGSS
A
± 30
V
(Note 1)
28
A
Gate-Source Voltage
IDM
Drain Current
EAS
Single Pulse Avalanche Energy
(Note 2)
267
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
15.2
mJ
dv/dt
Peak diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation TC=25℃
152
W
-45 ~ 150
℃
Tj, TSTG
pulse
Operation and Storage Temperature range
SFF7N60
Thermal Characteristics
Symbol
Parameter
Ratings
Unit
RθJC
Thermal Resistance Junction to Case
0.82
℃/W
RθCS
Thermal Resistance Case to Sink Typ.
0.5
℃/W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
Electrical Characteristics ( TC = 25℃ Unless otherwise noted)
Ratings
Symbol
Items
Unit
Conditions
Min
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
Breakdown
/ΔTJ
coefficient
IDSS
Zero gate voltage Drain Current
Voltage
VGS = 0 V, ID = 250uA
Typ.
Max
600
V
Temperature
0.7
ID =250uA, Reference to 25℃
V/℃
VDS = 600V, VGS = 0V
1
VDS = 480V, TS = 125℃
10
uA
IGSSF
Gate body leakage current Forward
VGS = 30V, VDS = 0V
100
nA
IGSSR
Gate body leakage current Reverse
VGS = -30V, VDS = 0V
-100
nA
4.5
V
1.2
Ω
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250uA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10V, ID = 3.5A
2.5
0.98
Dynamic Characteristics
Ciss
Input Capacitance
1000
pF
110
pF
12.6
pF
VDS = 25 V, VGS = 0V
Coss
output Capacitance
Crss
Reverse Transfer Capacitance
2/5
f = 1.0MHz
SFF7N60
Switching Characteristics
Symbol
td(on)
Items
Conditions
Min
Turn-on Delay Time
Typ.
Max
Units
20
ns
50
ns
80
ns
70
ns
VDD = 300V, ID = 7.0A
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
Qg
Total Gate Charge
VDS = 480V, ID = 7.0A
29
nC
Qgs
Gate-Source Charge
VGS = 10V
4.7
nC
Qgd
Gate-Drain Charge
12.5
nC
RG = 25 Ω
(note 4,5)
(note 4,5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source diode Forward Current
7.0
A
ISM
Maximum Pulse Drain-Source diode Forward Current
28.0
A
VSD
Drain-Source diode Forward voltage
VGS = 0V, Is = 7.0A
1.4
V
trr
Reverse Recovery Time
VGS = 0V, Is = 7.0A
Qrr
Reverse Recovery Charge
dlF/dt =100 A/us
(note 4)
350
nS
3.3
uC
Notes
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, starting TJ = 25℃
3. ISD ≤ 7.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS , starting TJ = 25℃
4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operation temperture
3/5
SFF7N60
Fig. 1 On-Region Characteristics
Fig. 2 On-Resistance variation vs Drain Current
And gate Voltage
Fig. 3 Breakdown Voltage Variation vs
Fig 4. On-Resistance Variation vs Temperature
Temperature
Fig. 5 Maximum Safe Operation Area
4/5
Fig. 6 Maximum Drain Current vs Case Temp.
SFF7N60
TO-220F Package Dimension
5/5