SFF7N60 N-Channel MOSFET Features ◆ RDS(ON) Max 1.2 ohm at VGS = 10V ◆ Gate Charge ( Typical 29.0nC) ◆ Improve dv/dt capability, Fast switching ◆ 100% avalanche Tested General Description This MOSFET is produced using advanced planar strip DMOS technology. This latest technology has been especially designed to minimize on-state resistance have a high rugged avalanche characteristics. These device are well suited for high efficiency switch mode power supply active power factor correction. Electronic lamp based on half bridge topology Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified) Symbol VDSS Parameter Drain-Source Voltage Drain Current Ratings Units 600 V TC=25℃ 7 TC=100℃ 4.3 ID VGSS A ± 30 V (Note 1) 28 A Gate-Source Voltage IDM Drain Current EAS Single Pulse Avalanche Energy (Note 2) 267 mJ EAR Repetitive Avalanche Energy (Note 1) 15.2 mJ dv/dt Peak diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TC=25℃ 152 W -45 ~ 150 ℃ Tj, TSTG pulse Operation and Storage Temperature range SFF7N60 Thermal Characteristics Symbol Parameter Ratings Unit RθJC Thermal Resistance Junction to Case 0.82 ℃/W RθCS Thermal Resistance Case to Sink Typ. 0.5 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W Electrical Characteristics ( TC = 25℃ Unless otherwise noted) Ratings Symbol Items Unit Conditions Min BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown /ΔTJ coefficient IDSS Zero gate voltage Drain Current Voltage VGS = 0 V, ID = 250uA Typ. Max 600 V Temperature 0.7 ID =250uA, Reference to 25℃ V/℃ VDS = 600V, VGS = 0V 1 VDS = 480V, TS = 125℃ 10 uA IGSSF Gate body leakage current Forward VGS = 30V, VDS = 0V 100 nA IGSSR Gate body leakage current Reverse VGS = -30V, VDS = 0V -100 nA 4.5 V 1.2 Ω On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250uA RDS(ON) Static Drain-Source On-Resistance VGS = 10V, ID = 3.5A 2.5 0.98 Dynamic Characteristics Ciss Input Capacitance 1000 pF 110 pF 12.6 pF VDS = 25 V, VGS = 0V Coss output Capacitance Crss Reverse Transfer Capacitance 2/5 f = 1.0MHz SFF7N60 Switching Characteristics Symbol td(on) Items Conditions Min Turn-on Delay Time Typ. Max Units 20 ns 50 ns 80 ns 70 ns VDD = 300V, ID = 7.0A tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time Qg Total Gate Charge VDS = 480V, ID = 7.0A 29 nC Qgs Gate-Source Charge VGS = 10V 4.7 nC Qgd Gate-Drain Charge 12.5 nC RG = 25 Ω (note 4,5) (note 4,5) Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source diode Forward Current 7.0 A ISM Maximum Pulse Drain-Source diode Forward Current 28.0 A VSD Drain-Source diode Forward voltage VGS = 0V, Is = 7.0A 1.4 V trr Reverse Recovery Time VGS = 0V, Is = 7.0A Qrr Reverse Recovery Charge dlF/dt =100 A/us (note 4) 350 nS 3.3 uC Notes 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, starting TJ = 25℃ 3. ISD ≤ 7.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS , starting TJ = 25℃ 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 5. Essentially independent of operation temperture 3/5 SFF7N60 Fig. 1 On-Region Characteristics Fig. 2 On-Resistance variation vs Drain Current And gate Voltage Fig. 3 Breakdown Voltage Variation vs Fig 4. On-Resistance Variation vs Temperature Temperature Fig. 5 Maximum Safe Operation Area 4/5 Fig. 6 Maximum Drain Current vs Case Temp. SFF7N60 TO-220F Package Dimension 5/5