HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This devices is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. 1- G 2-D 3-S █ Features 60V, RDS (on) ＜0.04? @VGS = 10 V •Low gate charge •100% avalanche tested •Improved dv/dt capability •Equivalent Type:FQP30N06 •30A, █ Maximum Ratings（Ta=25℃ ｕｎｌｅｓｓ ｏｔｈｅｒｗｉｓｅ ｓｐｅｃｉｆｉｅｄ） T s t g ——Storage Temperature ------------------------------------------------------ －55~175℃ T j ——Operating Junction Temperature -------------------------------------------------- 175℃ VD S S —— Drain -Source Voltage ---------------------------------------------------------- 60V ID —— Drain Current (Continuous)(T c=25℃）----------------------------------------------------------- 30A Drain Current (Continuous)(Tc=100℃）--------------------------------------------------------- 21.2A IDM —— Drain Current Pulse ------------------------------------------------------------------------------ 120A VGSS —— Gate-Source Voltage -------------------------------------------------------------------------- ±20V PD —— Maximum Power Dissipation (Tc=25℃）----------------------------------------------------- 79W EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, I D = IAR, VDD = 50 V) --------------------------------------------------- 430 mJ dv/dt—— Reak Diode Recovery dv/dt (ISD≤30A,di/dt≤300A/us,Vdd≤BVdss,Duty Cycle ≤2%) ------------------------- 7.0V/ns █ Thermal Characteristics Symbol Rthj-case Items Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Rth c-s Thermal Resistance Case-sink Max TO-220 1.9 Unit ℃/W Max 62.5 ℃/W Typ 0.5 ℃/W HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. █ Electrical Characteristics （Ta=25℃ ｕｎｌｅｓｓ ｏｔｈｅｒｗｉｓｅ ｓｐｅｃｉｆｉｅｄ） Symbol Items Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Typ. Unit 1 10 ±100 V µA µA nA 60 Zero Gate Voltage Drain Current IGSS Gate –Body Leakage On Characteristics Gate Threshold Voltage VGS(th) Max. 2.0 RDS(on) Static Drain-Source On-Resistance Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance 4.0 0.04 V ? 1210 pF Coss Output Capacitance 380 pF Crss Reverse Transfer Capacitance 100 pF td(on) Turn - On Delay Time 40 nS Rise Time 60 nS Turn - Off Delay Time 130 nS Fall Time 90 nS Qg Total Gate Charge 35 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge tr td(off) tf 6.2 nC 11.1 Drain-Source Diode Characteristics and Maximun Ratings Continuous Source–Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source–Drain Diode Forward VSD On–Voltage nC Notes: 1. Pulse Test: Pulse width≤300μＳ，Ｄｕｔｙ ｃｙｃｌｅ≤２％ 2. Essentially independent of operating temperature 30 A 120 A 1.5 V Conditions ID =250µA ,VGS=0V VDS =60V, VGS=0V VDS =48V, VGS=0V,Tj=150℃ VGS= ±20V , VDS =0V VDS = VGS , ID=250µA VGS=10V, ID=15A VDS = 25 V, VGS = 0V, f = 1.0 MHz VDD = 30 V, ID = 15Apk RG = 50 ? (Note 1,2) VDS=0.8VDSS, ID=30A, VGS = 10 V (Note 1,2) IS=30A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Typical Characteristics Fig 1. On-State Characteristics Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 5. Capacitance Characteristics Fig 2. Transfer Characteristics Fig 4. On State Current vs. Allowable Case Temperature Fig 6. Gate Charge Characteristics HFP30N06 Shantou Huashan Electronic Devices Co.,Ltd. █ Typical Characteristics Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature Fig 9. Maximum Safe Operating Area Fig 11. Transient Thermal Response Curve Fig 10. Maximum Drain Current vs. Case Temperature Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Typical Characteristics Fig. 12. Gate Charge Test Circuit & Waveforms Fig 13. Switching Time Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Typical Characteristics Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms