HFP830 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. 1- G 2-D 3-S █ Features 4.5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF830 • █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg ——Storage Temperature ------------------------------------------------------ -55~150℃ T j ——Operating Junction Temperature ---------------------------------------------- -55~150℃ V DSS —— Drain-Source Voltage ---------------------------------------------------------- 500V VDGR —— Drain-Gate Voltage (RGS=1MΩ) --------------------------------------------------------- 500V VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V ID —— Drain Current (Continuous) ------------------------------------------------------------------- 4.5A PD —— Maximum Power Dissipation -------------------------------------------------------------- 75W IAR —— Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 4.5 A EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------270 mJ EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) --------------- 7.3mJ █ Thermal Characteristics Symbol Rthj-case Items Thermal Resistance Junction-case TO-220 Max 1.71 Unit ℃/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 ℃/W Rth c-s Thermal Resistance Case-sink Typ ℃/W 0.5 HFP830 Shantou Huashan Electronic Devices Co.,Ltd. █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Items Min. Typ. Max. Unit Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 500 IGSS Gate – Body Leakage On Characteristics VGS(TH) RDS(ON) Gate Threshold Voltage 2.0 Static Drain-Source On-Resistance V ID=250µA ,VGS=0V 25 250 µA µA VDS =500V, VGS=0V VDS=400V, VGS=0V,Tj=125℃ ±100 nA VGS= ±20V , VDS =0V 4.0 1.5 V Ω VDS = VGS , ID=250µA VGS=10V, ID=2.5A S VDS=40V, ID=2.5A gFS Forward Transconductance 2.5 Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance 800 pF Coss Output Capacitance 200 pF Crss Reverse Transfer Capacitance 60 pF td(on) Turn - On Delay Time 30 nS Rise Time 30 nS Turn - Off Delay Time 55 nS Fall Time 30 nS tr td(off) tf Qg Total Gate Charge 22 nC Qgs Gate–Source Charge 12 nC Qgd Gate–Drain Charge 10 nC Drain-Source Diode Characteristics and Maximun Ratings Continuous Source–Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source–Drain Diode Forward VSD On–Voltage 4.5 A 18 A 1.5 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 200 V, ID = 2.5Apk RG= 15 Ω VDS=0.8VDSS, ID=4.5A, VGS = 10 V IS=4.5A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified） Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified） Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified） Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified）