N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13003 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching. Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML T stg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………40W VCBO ——Collector-Base Voltage………………………………700V VCEO——Collector-Emitter Voltage……………………………400V 1―Emitter，E V E B O ——Emitter-Base Voltage………………………………9V 2―Collector，C 3― Base，B I—— C Collector Current……………………………………1.5A IB——Base Curren………………………………………………0.75A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit V IC=5mA, IB=0 μA VEB=9V, IC=0 400 IEBO Emitter-Base Cut-off Current HFE1 DC Current Gain 10 HFE2 DC Current Gain 5 10 Test Conditions VCE=5V, IC=0.5A 40 VCE=2V, IC=1A VCE(sat)1 Collector- Emitter Saturation Voltage 0.5 V IC=0.5A, IB=0.1A VCE(sat)2 Collector- Emitter Saturation Voltage 1 V IC=1A, IB=0.25A VCE(sat)3 Collector- Emitter Saturation Voltage 3 V IC=1.5A, IB=0.5A VBE(sat)1 Base-Emitter Saturation Voltage 1 V IC=0.5A, IB=0.1A VBE(sat)2 Base-Emitter Saturation Voltage 1.2 V IC=1A, IB=0.25A fT Current Gain-Bandwidth Product tON Turn On Time 1.1 MHz μs tSTG Storage Time 4.0 μs IB1=0.2A,IB2=-0.2A Fall Time 0.7 μs RL=125Ω tF 4 VCE=10V,IC=0.1A VCC=125V, IC=1A, █ hFE Classification H1 H2 H3 H4 H5 10-16 14-21 19-26 24-31 29-40