NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD379 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… －55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（T c=25℃）…………………… 25W 1―Emitter, E VCBO ——Collector-Base Voltage…………………………… 100V 2―Collector，C 3―Base，B VCEO —— Collector-Emitter Voltage………………………… 80V VEBO ——Emitter-Base Voltage………………………………… 5V IC——Collector Current（Pulse）………………………………… 3A I ——Collector Current（DC）…………………………………… 2A C Ib——Base Current………………………………………………1A █ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max ２ Unit Test Conditions ICBO Collector Cut-off Current IEBO Emitter Cut-off Current １００ μＡ VEB=5V, IC=0 *HFE（1） DC Current Gain ４０ ３７５ VCE=2V, IC=150mA *HFE（2） DC Current Gain ２０ VCE=2V, IC=1A *VCE(sat) Collector- Emitter Saturation Voltage １ Ｖ IC=1A, IB =0.1A *VBE(on) Base-Emitter On Voltage １．５ Ｖ VCE=2V, IC=1A VCEO(sus) Collector-Emitter Sustaining Voltage ８０ Ｖ IC=100mA, IB=0 Collector-Base Breakdown Voltage １００ Ｖ BVCBO μＡ VCB=80V, IE=0 tON Turn-On Time ５０ ｎＳ IC=100μA, IE=0 VCC=30V, IC=0.5A tOFF Turn-Off Time ５００ ｎＳ IB1 =-IB2 =0.05A * Ｐｕｌｓｅ Ｔｅｓｔ：ＰＷ＝３５０μＳ，Ｄｕｔｙ Ｃｙｃｌｅ＝２％ Ｐｕｌｓｅｄ █hFE(3) Classification Cassification hFE(3) 6 40~100 10 16 63~160 100~250 25 150~375