NPN SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. KSH13005 █ HIGH VOLTAGE SWITCH MODE APPLICICATION High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(T c=25℃)…………………… 75W VCBO ——Collector-Base Voltage…………………………… 700V VCEO——Collector-Emitter Voltage………………………… 400V 1―Base,B VEBO ——Emitter-Base Voltage……………………………… 9V 2―Collector,C 3―Emitter, E IC——Collector Current(DC)………………………………… 4A IC——Collector Current(Pulse)……………………………… 8A IB——Base Current……………………………………………2A █ 电参数(Ta=25℃) Symbol BVCEO Characteristics Collector-Emitter Sustaining Voltage IEBO Emitter-Base Cut-off Current HFE DC Current Gain VCE(sat) Min Typ fT 1 mA Test Conditions IC=10mA, IB=0 VEB=9V, IC=0 10 40 VCE=5V, IC=1A 8 40 VCE=5V, IC=2A Collector- Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Unit V 400 VBE(sat) Base- Emitter Saturation Voltage Cob Max 0.5 V IC=1A, IB =0.2A 0.6 V IC=2A, IB =0.5A 1 V IC=4A, IB =1A 1.2 V IC=1A, IB =0.2A 1.6 V IC=2A, IB =0.5A pF VCB=10V, f=0.1MHz 65 4 MHz VCE=10V, IC=0.5A tON Turn On Time 0.8 μs VCC=125V, tS Storage Time 4 μs IC=2A, tF Fall Time 0.9 μs IB1 =-IB2 =0.4A hFE Classification: H1(10--16) H2(14--21) H3(19--26) H4(24--31) H5(29--40)