HUASHAN KSH13005

NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
KSH13005
█ HIGH VOLTAGE SWITCH MODE APPLICICATION
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(T c=25℃)…………………… 75W
VCBO ——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
1―Base,B
VEBO ——Emitter-Base Voltage……………………………… 9V
2―Collector,C
3―Emitter, E
IC——Collector Current(DC)………………………………… 4A
IC——Collector Current(Pulse)……………………………… 8A
IB——Base Current……………………………………………2A
█ 电参数(Ta=25℃)
Symbol
BVCEO
Characteristics
Collector-Emitter Sustaining Voltage
IEBO
Emitter-Base Cut-off Current
HFE
DC Current Gain
VCE(sat)
Min
Typ
fT
1
mA
Test Conditions
IC=10mA, IB=0
VEB=9V, IC=0
10
40
VCE=5V, IC=1A
8
40
VCE=5V, IC=2A
Collector- Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Unit
V
400
VBE(sat) Base- Emitter Saturation Voltage
Cob
Max
0.5
V
IC=1A, IB =0.2A
0.6
V
IC=2A, IB =0.5A
1
V
IC=4A, IB =1A
1.2
V
IC=1A, IB =0.2A
1.6
V
IC=2A, IB =0.5A
pF
VCB=10V, f=0.1MHz
65
4
MHz
VCE=10V, IC=0.5A
tON
Turn On Time
0.8
μs
VCC=125V,
tS
Storage Time
4
μs
IC=2A,
tF
Fall Time
0.9
μs
IB1 =-IB2 =0.4A
hFE Classification: H1(10--16) H2(14--21) H3(19--26) H4(24--31) H5(29--40)