NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HC4054 █ APPLICATIONS Switching Power . █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 T stg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(T c=25℃)…………………… 30W VCBO ——Collector-Base Voltage………………………… 600V VCEO ——Collector-Emitter Voltage……………………… 450V 1―Base,B VEBO ——Emitter-Base Voltage……………………………… 7V 2―Collector,C 3―Emitter, E IC——Collector Current……………………………………… 5A IB——Base Current……………………………………………2A █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol BVCEO(SUS) Characteristics Collector-Emitter Sustaining Voltage Min Typ Max Unit Test Conditions 450 V IC=100mA, IB=0 ICBO Collector Cutoff Current 0.1 mA VCB=600V, IE=0 IEBO Emitter-Base Cutoff Current 0.1 mA VEB=7V, IC=0 ICEO Collector Cutoff Current 0.1 mA VCE=450V, IB=0 10 VCE=5V, IC=2.5A 5 VCE=5V, IC=1mA V IC=2.5A, IB =0.5A HFE(1) DC Current Gain HFE(2) VCE(sat1) Collector- Emitter Saturation Voltage 1 VBE(sat) Base-Emitter Saturation Voltage 1.5 fT Current Gain-Bandwidth Product 20 V IC=2.5mA, IB=0.5A MHz VCE=10V Ic=0.5A, tON Turn-On Time 0.5 μS tSTG Storage Time 2 μS Fall Time 0.2 μS tF Ic=2.5A, IB1 =0.5A IB2 =1A VBB2 =4V,RL=60Ω