REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle ! For Ground and Air DME, TCAS and I F F Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING (IEC 134) "#$%&'! -2""! -8""! <2"=$)>?! (29! (10! H"! ()*)$+,+*! 2*)103"&.*4+!-&',)5+! 8),+3"&.*4+!-&',)5+! 2*)10!@.**+0,! (&C+*!21DD1E),1&0! <0E.,!(&C+*! ",&*)5+!H+$E+*),.*+! HK! K.04,1&0!H+$E+*),.*+! -)'.+! /01,! 67! -! 39:;!9:! -! 9A! B! 9FA7! G! 7! G! 3A:!,&! J@! I97:! L::! J@! THERMAL/RUGGEDNESS PERFORMANCE ! ! !"#$%&' ()*)#+,+*' -).' /01,' LJK@L! HM+*$)'!N+D1D,)04+! :O9F! J@PG! "#$%&'! SRHL! ()*)$+,+*! S&)Q! R1D$),4M! H&'+*)04+! H+D,!@&0Q1,1&0! T!U!9L97!RVW! R)>! L:X9! /01,D! -"GN! ! ! ! The HVV0912-150 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. ! ELECTRICAL CHARACTERISTICS "#$%&'! -YN=2""?! <2""! <8""! 8(L! <NSL! dž2L! -8"=a?F! -HV! ()*)$+,+*! 2*)103"&.*4+!Y*+)ZQ&C0! 2*)10!S+)Z)5+!@.**+0,! 8),+!S+)Z)5+!@.**+0,! (&C+*!8)10! <0E.,!N+,.*0!S&DD! 2*)10!^__141+04#! 8),+!a.1+D4+0,!-&',)5+! HM*+DM&'Q!-&',)5+! ! ! ! @&0Q1,1&0D! -8"U:-;<2U7$B! -8"U:-;-2"U7:-! -8"U7-;-2"U:-! TU9L97RVW! TU9L97RVW! TU9L97RVW! -22U7:-;<2aU9::$B! -22U7-;!<2UF::[B! R10! 67! 3! 3! 9\! 3! A9! 9O9! :O]! H#E14)'! 9:L! 7:! 9:! L:! 3]! AF! 9OA7! 9OL! R)>! 3! 9::! 9::! 3! 3FO7! 3! 9O\! 9O]! /01,! -! [B! 0B! QY! QY! `! -! -! PULSE CHARACTERISTICS ! ! "#$%&'! ,*A! ,_A! (2A! ()*)$+,+*! N1D+!H1$+! T)''!H1$+! (.'D+!2*&&E! @&0Q1,1&0D! TU9L97RVW! TU9L97RVW! TU9L97RVW! R10! 3! 3! 3! H#E14)'! b9]! bL]! :OL7! R)>! 7:! 7:! :O7! /01,D! 0"! 0"! QY! ! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 150W output power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11C 07/19/10 2 The innovative Semiconductor Company! H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and I F F Applications ! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1215MHz. !!!!!!!!!!!! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1215MHz. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11C 07/19/10 3 The innovative Semiconductor Company! H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle ! For Ground and Air DME, TCAS and I F F Applications ! !!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 150W. !! !!!!!!!! !!!!!!!!!!!!! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 150W. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11C 07/19/10 4 The innovative Semiconductor Company! H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and I F F Applications Typical device performance under Class AB mode of operation at 1215MHz and RF pulse conditions of 10µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology shows less than 2dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP Gain (dB) Power (W) Power (dBm) -40C 22.5 188 52.7 0C 20.3 212 53.3 25C 19.8 193 52.9 85C 17.7 148 51.7 ! HVV0912-150 Performance over Temperature HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11C 07/19/10 5 The innovative Semiconductor Company! H V V0912-150 H igh Voltage, H igh Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle ! For Ground and Air DME, TCAS and I F F Applications ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Zo = 10 ȍ ZIN* 1215Hz 1215Hz ZOUT * Test Circuit Impedances Frequency Zin* (ohms) Zout* (ohms) 960MHz 2.1-j5.0 3.3-j6.8 1025MHz 1.9-j4.1 3.0-j5.7 1088MHz 1.7-j3.3 2.7-j4.9 1150MHz 1.6-j2.5 2.6-j4.0 1215MHz 1.5-j1.7 2.5-j3.3 Zin* HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 Zout* Input Output Impedance Matching Network Impedance Matching Network ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS11C 07/19/10 6 PACKAGE DIMENSIONS DRAIN GATE ASI PART NUMBER JDATE CODE inches mm SOURCE Note: Drawing is not actual size. ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. 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