Sep 2002 AO7400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. VDS (V) = 30V ID = 1.7 A RDS(ON) < 85mΩ (VGS = 10V) RDS(ON) < 100mΩ (VGS = 4.5V) RDS(ON) < 140mΩ (VGS = 2.5V) SC-70 (SOT-323) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 10 0.35 W 0.22 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 1.7 TA=25°C Power Dissipation A Maximum 30 RθJA RθJL Typ 300 340 280 Max 360 425 320 Units °C/W °C/W °C/W AO7400 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V 0.6 gFS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=1.5A VGS=2.5V, ID=1A VDS=5V, ID=1.5A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr V µA 1 100 1.4 nA V 70 100 81 85 125 100 mΩ 114 4 140 mΩ 0.81 1 0.5 A mΩ S 390 54.5 pF pF VGS=0V, VDS=0V, f=1MHz 41 3 pF Ω 4.82 0.62 nC nC 1.58 2.5 2.3 22 3 10 nC ns ns ns ns VGS=4.5V, VDS=15V, ID=1.7A VGS=10V, VDS=15V, RL=10.0Ω, RGEN=3Ω IF=1.7A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=1.7A, dI/dt=100A/µs 3.6 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. V A VGS=0V, VDS=15V, f=1MHz Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Units 10 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Max 1 5 TJ=55°C VGS=10V, ID=1.5A RDS(ON) Typ ns nC AO7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10 10V 3V 8 8 VDS=5V 4.5V 6 6 ID(A) ID (A) 2.5V 4 4 125°C 2 2 VGS=2V 25°C 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 200 1.6 ID=1A Normalized On-Resistance 175 RDS(ON) (mΩ) 1 VGS=2.5V 150 125 VGS=4.5V 100 75 VGS=10V VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 50 0 2 4 6 8 0.8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 ID=1A 1.0E-01 IS (A) RDS(ON) (mΩ) 150 125°C 125°C 1.0E-02 1.0E-03 100 25°C 25°C 1.0E-04 1.0E-05 50 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO7400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=1.7A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 0 1 2 3 4 5 0 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100 Crss 5 10 15 TJ(Max)=150°C TA=25°C 12 100µs 1ms 1 0.1s 10 10µs Power (W) ID (Amps) RDS(ON) limited 10ms 1s 6 2 DC 0.01 1 10 0 0.001 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=360°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z θJA Normalized Transient Thermal Resistance 8 4 10s 10 30 14 10 0.1 25 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 0.1 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 SC-70 3L Package Data θ SYMBOLS A A1 A2 b C D E E1 F e e1 L θ1 DIMENSIONS IN MILLIMETERS MIN MAX 0.90 1.10 0.00 0.10 0.90 1.00 0.25 0.40 0.10 0.20 1.80 2.20 1.15 1.35 2.00 2.20 0.30 0.40 0.65 BSC 1.30 BSC 0.10 0.30 1° 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. OTHER NAME OF THIS PACKAGE IS CALLED SOT-323 PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN PNW LT SC-70 3L PART NO. CODE PART NO. CODE AO7400 0 NOTE: P - PART NUMBER CODE. N - FOUNDRY AND ASSEMBLY LOCATION CODE W - YAER AND WEEK CODE. L T - ASSEMBLY LOT CODE. Rev. A SC-70 3L Tape and Reel Data SC-70 3L Carrier Tape SC-70 3L Reel SC-70 3L Tape Leader / Trailer & Orientation