AOSMD AOP607

AOP607
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOP607 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications).
AOP607L is a Green Product ordering option.
AOP607 and AOP607L are electrically identical.
n-channel
p-channel
-60V
VDS (V) = 60V
ID = 4.7A (VGS=10V)
-3.4A (VGS=-10V)
RDS(ON)
RDS(ON)
< 56mΩ (VGS=10V)
< 105mΩ (VGS =-10V)
< 77mΩ (VGS=4.5V)
< 135mΩ (VGS =-4.5V)
D1
D2
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
PDIP-8
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70°C
B
TA=25°C
Power Dissipation
±20
4.7
-3.4
ID
3.8
-2.7
IDM
20
-20
2.5
2.5
TA=70°C
1.6
1.6
-55 to 150
-55 to 150
PD
TJ, TSTG
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
Typ
37
74
28
p-ch
p-ch
p-ch
35
73
32
Units
V
V
±20
TA=25°C
Continuous Drain
Current A
Max p-channel
-60
A
W
°C
Max Units
50 °C/W
90 °C/W
40 °C/W
50
90
40
°C/W
°C/W
°C/W
AOP607
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
60
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.7A
VGS=4.5V, ID=4A
gFS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=4.7A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
2.3
Units
µA
100
nA
3
V
A
42
TJ=125°C
VSD
Max
V
VDS=48V, VGS=0V
VGS(th)
IS
Typ
56
75
54
77
mΩ
1
V
4
A
540
pF
11
0.78
450
mΩ
S
VGS=0V, VDS=30V, f=1MHz
60
VGS=0V, VDS=0V, f=1MHz
1.65
2
Ω
8.5
10.5
nC
4.3
5.5
nC
pF
25
VGS=10V, VDS=30V, ID=4.7A
pF
1.6
nC
Gate Drain Charge
2.2
nC
Turn-On DelayTime
5.1
ns
2.6
ns
15.9
ns
2
ns
VGS=10V, VDS=30V, RL=6Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=4.7A, dI/dt=100A/µs
25.1
Qrr
Body Diode Reverse Recovery Charge IF=4.7A, dI/dt=100A/µs
28.7
35
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOP607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
15
10.0V
5.0V
VDS=5V
15
10
125°C
ID(A)
ID (A)
4.5V
10
4.0V
5
5
25°C
VGS=3.5V
0
0
1
2
3
4
0
5
2
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics
100
2
Normalized On-Resistance
90
80
RDS(ON) (mΩ)
3
VGS=4.5V
70
60
50
40
VGS=10V
30
20
VGS=10V
1.8
ID=4.7A
1.6
VGS=4.5V
1.4
ID=3.0A
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
160
ID=4.7A
1.0E+00
140
125°C
IS (A)
RDS(ON) (mΩ)
1.0E-01
120
125°C
100
1.0E-02
25°C
1.0E-03
80
25°C
1.0E-04
60
1.0E-05
40
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOP607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
10
VDS=30V
ID= 4.7A
Capacitance (pF)
VGS (Volts)
8
6
4
2
600
Ciss
400
Coss
200
0
Crss
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
20
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
40
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
10ms
10µs
1ms
0.1s
1.0
10s
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
30
10.0
1s
10
DC
0
0.001
0.1
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AOP607
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-60
-1
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-20
VGS=-10V, I D=-3.4A
TJ=125°C
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
105
A
130
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, I D=-3.4A
mΩ
S
-0.77
930
VGS=0V, VDS=-30V, f=1MHz
135
mΩ
-1
V
-4
A
1120
pF
85
pF
35
pF
7.2
9
Ω
16
20
nC
8
10
nC
nC
Gate Drain Charge
3.2
nC
Turn-On DelayTime
8
ns
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Qrr
80
2.5
Gate Source Charge
Qgd
trr
V
10
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Coss
nA
-3
VDS=-5V, ID=-3.4A
Forward Transconductance
Crss
±100
102
gFS
µA
-2.1
VGS=-4.5V, I D=-2.7A
VSD
Units
V
TJ=55°C
IGSS
IS
Max
VDS=-48V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=-10V, VDS=-30V, RL=8.8Ω,
RGEN=3Ω
3.8
ns
31.5
ns
7.5
Body Diode Reverse Recovery Time
IF=-3.4A, dI/dt=100A/µs
27
Body Diode Reverse Recovery Charge
IF=-3.4A, dI/dt=100A/µs
32
ns
35
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any agiven
givenapplication
applicationdepends
dependson
onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thet≤t≤10s
10sthermal
thermalresistance
resistancerating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1:Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
ns
nC
AOP607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
20
-10V
VDS=-5V
25
-4.5V
15
-4.0V
-ID(A)
-ID (A)
20
10
-3.5V
15
10
5
VGS=-3.0V
125°C
5
25°C
0
0
1
2
3
4
0
5
1
1.5
-VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
-VGS(Volts)
Figure 2: Transfer Characteristics
130
Normalized On-Resistance
2
120
RDS(ON) (mΩ)
2
VGS=-4.5V
110
100
90
VGS=-10V
80
ID=-3.4A
1.8
VGS=-10V
1.6
VGS=-4.5V
1.4
ID=-3A
1.2
1
0.8
70
0
0
2
4
6
8
10
75
100
125
150
175
1.0E+01
180
1.0E+00
ID=-3.4A
160
1.0E-01
140
125°C
125°C
1.0E-02
-IS (A)
RDS(ON) (mΩ)
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
25
120
1.0E-03
100
25°C
1.0E-04
80
25°C
1.0E-05
60
2
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-06
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOP607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1500
VDS=-30V
ID=-3.4A
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
500
Coss
2
Crss
0
0
4
8
12
16
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
1ms
0.1s
100µs
50
60
30
Power (W)
-ID (Amps)
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10ms
1s
20
10
10s
DC
0
0.001
0.1
0.1
30
40
TJ(Max)=150°C, TA=25°C
1.0
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000