Rev 2: Nov 2004 AO6604, AO6604L ( Green Product ) Complementary Enhancement Mode Field Effect Transistor General Description Features The AO6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AO6604L( Green Product ) is offered in a lead-free package. n-channel p-channel -20V VDS (V) = 20V -2.5A ID = 3.4A RDS(ON) < 60mΩ < 110mΩ (VGS = 4.5V) < 75mΩ < 140mΩ (VGS = 2.5V) < 100mΩ < 200mΩ (VGS = 1.8V) D2 D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 G1 D1 S1 D2 G2 S1 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±8 ±8 3.4 -2.5 ID 2.7 -2.0 IDM 15 -15 1.15 1.15 0.73 0.73 -55 to 150 -55 to 150 TA=25°C Continuous Drain Current A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -20 Symbol RθJA RθJL Typ 78 106 64 Max 110 150 80 Units V V A W °C Units °C/W °C/W °C/W AO6604, AO6604L N-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 15 100 nA 0.6 1 V 46 60 63 80 VGS=2.5V, ID=3A 57 75 mΩ VGS=1.8V, ID=2A 72 100 mΩ VDS=5V, ID=3.4A 10 VGS=4.5V, ID=3.4A TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA 5 Gate-Body leakage current IS Units V VDS=16V, VGS=0V IGSS Static Drain-Source On-Resistance Max 20 VGS(th) RDS(ON) Typ A 0.76 436 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=3.4A mΩ S 1 V 2 A 570 pF 66 pF 44 pF 3 4 Ω 6.2 8.1 nC 1.6 nC Qgd Gate Drain Charge 0.5 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.4A, dI/dt=100A/µs 12.3 Qrr Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs 3.5 VGS=5V, VDS=10V, RL=3Ω, RGEN=3Ω 6.3 ns 40 ns 12.7 ns 16 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6604, AO6604L N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 16 8V 4.5V VDS=5V 8 2V 3V 2.5V 8 ID(A) ID (A) 12 6 4 VGS=1.5V 4 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 1.8 VGS=1.8V 80 VGS=2.5V 60 40 VGS=4.5V 20 VGS=2.5V 1.6 VGS=1.8V ID=3.4A 1.4 VGS=4.5V 1.2 1 0.8 0 4 8 12 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 100 90 1E+00 ID=3.4A 80 125°C 1E-01 70 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 60 50 1E-02 25°C 1E-03 25°C 40 1E-04 30 1E-05 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO6604, AO6604L N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=3.4A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 100.0 10 20 TJ(Max)=150°C TA=25°C 15 20 TJ(Max)=150°C TA=25°C 100µs 15 RDS(ON) limited 10µs 1ms Power (W) 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Crss 0.1s 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO6604, AO6604L P-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 -5 ±100 nA -1 V 86 110 116 145 VGS=-2.5V, ID=-2A 113 140 mΩ VGS=-1.8V, ID=-1A 151 200 mΩ TJ=125°C Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd µA -0.55 gFS IS Units V TJ=55°C VGS=-4.5V, ID=-2.5A Static Drain-Source On-Resistance Max -1 VDS=-16V, VGS=0V IDSS RDS(ON) Typ 4 A 6 -0.78 540 VGS=0V, VDS=-10V, f=1MHz S -1 V -2 A 700 pF 72 pF 49 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2.5A Gate Drain Charge pF 12 15.6 Ω 6.1 8 nC 0.6 nC 1.6 nC 10 ns 12 ns 44 ns 22 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-2.5A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs 7.5 VGS=-4.5V, VDS=-10V, RL=3.9Ω, RGEN=3Ω mΩ 28 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6604, AO6604L P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V VDS=-5V -2.5V -8V 4 10 -ID(A) -ID (A) -2.0V 2 5 125°C VGS=-1.5V 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 200 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 VGS=-1.8V RDS(ON) (mΩ) 0.5 150 VGS=-2.5V 100 VGS=-4.5V 50 VGS=-2.5V ID=-2.5A 1.6 VGS=-1.8V 1.4 VGS=-4.5V 1.2 1 0.8 0 2 4 6 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 1E+00 ID=-2.5A 1E-01 -IS (A) RDS(ON) (mΩ) 150 125°C 100 25°C 125°C 1E-02 25°C 1E-03 1E-04 1E-05 50 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6604, AO6604L P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-2.5A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 TJ(Max)=150°C TA=25°C 10µs Power (W) 15 1ms RDS(ON) limited 0.1s 20 TJ(Max)=150°C TA=25°C 100µs 10.0 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) 5 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 1 0.1 1 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W PD 0.1 Ton Single Pulse 0.01 0.00001 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000