AO4611 60V Dual P + N-Channel MOSFET General Description The AO4611 uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Features N-Channel P-Channel VDS (V) = 60V -60V ID = 6.3A (VGS=10V) -4.9A RDS(ON) < 25mΩ (VGS=10V) < 42mΩ (VGS = -10V) < 30mΩ (VGS=4.5V) < 52mΩ (VGS = -4.5V) SOIC-8 D2 D1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G2 G1 S2 S1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current A VGS TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Max p-channel -60 ±20 ±20 6.3 -4.9 ID 5 -3.9 IDM 40 -30 TJ, TSTG A 2 2 1.28 -55 to 150 -55 to 150 Symbol RθJA RθJL RθJA RθJL Units V V 1.28 PD Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C 1/7 p-channel W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 40 °C/W °C/W °C/W www.freescale.net.cn AO4611 60V Dual P + N-Channel MOSFET N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 40 VGS=10V, ID=6.3A TJ=125°C VGS=4.5V, ID=5.7A gFS Forward Transconductance VDS=5V, ID=6.3A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=48V, VGS=0V IGSS RDS(ON) Typ 100 nA 2.1 3 V 20 25 34 42 22 30 mΩ 1 V 3 A 2300 pF A mΩ 27 S 0.74 1920 VGS=0V, VDS=30V, f=1MHz µA 155 pF 116 pF 0.65 0.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 47.6 58 nC Qg(4.5V) Total Gate Charge 24.2 30 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=6.3A 6 nC 14.4 nC 7.6 ns 5 ns 28.9 ns VGS=10V, VDS=30V, RL=4.7Ω, RGEN=3Ω IF=6.3A, dI/dt=100A/µs 33.2 5.5 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs 43 ns 40 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev5: Nov. 2010 2/7 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA www.freescale.net.cn AO4611 60V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 30 10V 4V 25 VDS=5V 30 125°C 20 ID(A) ID (A) 4.5V 20 3.5V 15 10 10 25°C 5 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 Normalized On-Resistance 2.2 22 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 24 VGS=4.5V 20 VGS=10V 18 16 VGS=10V ID=6.3A 2 1.8 VGS=4.5V 1.6 ID=5.7A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=6.3A 1.0E+00 40 125°C 125°C 1.0E-01 IS (A) RDS(ON) (mΩ ) 2.5 30 25°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/7 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4611 60V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 3500 10 VDS=30V ID=6.3A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2500 2000 1500 Coss 1000 Crss 2 500 0 0 0 10 20 30 40 50 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10ms 1s 1.0 30 Power (W) ID (Amps) 10.0 TJ(Max)=150°C TA=25°C 10µs 100µs 1ms 0.1s 10s TJ(Max)=150°C TA=25°C 10 0 0.001 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 20 DC 0.1 10 30 40 RDS(ON) limited 0.1 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/7 www.freescale.net.cn AO4611 60V Dual P + N-Channel MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -60 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 VGS=-10V, ID=-4.9A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4.4A nA -3 V 34 42 58 72 42 52 mΩ -1 V -3 A 2900 pF A Forward Transconductance VDS=-5V, ID=-4.9A 17.8 Diode Forward Voltage IS=-1A,VGS=0V -0.73 IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2417 VGS=0V, VDS=-30V, f=1MHz µA ±100 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units -1.9 VSD Coss Max V VDS=-48V, VGS=0V IGSS RDS(ON) Typ mΩ S 179 pF 120 pF 1.9 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 45.2 55 nC Qg(4.5V) Total Gate Charge (4.5V) 22.8 28 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-4.9A 5.8 nC 9.6 nC 9.8 ns 6.1 ns 44 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-4.9A, dI/dt=100A/µs 32 Qrr Body Diode Reverse Recovery Charge IF=-4.9A, dI/dt=100A/µs 42 VGS=-10V, VDS=-30V, RL=6.2Ω, RGEN=3Ω 12.7 ns 42 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet t ≤≤ 10s thermal The value in any agiven resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 80 µs µs pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev5: Nov. 2010 5/7 www.freescale.net.cn AO4611 60V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 -10V -4V -3.5V -6V VDS=-5V 25 20 -ID(A) -ID (A) 20 15 10 -3V 15 10 125°C 5 5 25°C VGS=-2.5V 0 0 0 1 2 3 4 5 1 1.5 50 Normalized On-Resistance RDS(ON) (mΩ ) 2.5 3 3.5 4 2 VGS=-4.5V 45 40 35 VGS=-10V ID=-4.9A 1.8 VGS=-10V 1.6 1.4 VGS=-4.5V ID=-4.4A 1.2 1 0.8 30 0 5 10 15 0 20 25 100 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 90 ID=-4.9A 80 1.0E+00 1.0E-01 125°C 70 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 1.0E-03 50 1.0E-04 40 25°C 25°C 1.0E-05 30 1.0E-06 20 0.0 2 6/7 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4611 60V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3500 10 VDS=-30V ID=-4.9A 3000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2500 2000 1500 1000 2 Coss Crss 500 0 0 0 10 20 30 40 50 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 1ms 0.1s 10µs 50 60 30 Power (W) -ID (Amps) 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10ms 1s 20 10 10s DC 0.1 0.1 30 40 TJ(Max)=150°C, T A=25°C 1.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 7/7 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.freescale.net.cn