AO4617 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a Green Product ordering option. AO4617 and AO4617L are electrically identical. n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 32mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 48mΩ (VGS = -10V) < 75mΩ (VGS = -4.5V) ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 SOIC-8 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current TA=25°C B ID IDM TA=70°C TA=25°C Power Dissipation B Avalanche Current EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. 6 -5 5 -4 30 -25 V A 2 2 1.28 13 17 A 25 43 mJ -55 to 150 -55 to 150 °C IAR B Repetitive avalanche energy 0.3mH ±20 Units V 1.28 PD TA=70°C Max p-channel -40 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 W Max 62.5 110 50 Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 50 °C/W AO4617 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 ±1 mA 3 V 26 32 39 48 VGS=4.5V, I D=5A 36 45 VDS=5V, ID=6A 18 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 2.2 VGS=10V, I D=6A Coss Units V VDS=32V, VGS=0V VGS(th) IS Max 40 IGSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, I D=6A A mΩ mΩ S 0.76 1 V 3 A 506 pF 106 pF 38 pF 2.6 3.9 Ω 8.4 nC 4.1 nC 1.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2.7 nC tD(on) Turn-On DelayTime 4.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω 2 ns 17 ns 2.1 ns Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 17.4 Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 10.9 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : October 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4617 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 20 5V 25 VDS=5V 4.5V 15 4V ID(A) ID (A) 20 15 125°C 10 VGS=3.5V 10 5 5 25°C -40°C 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Figure 1: On-Region Characteristics 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 50 1.8 Normalized On-Resistance RDS(ON) (mΩ) 3 VGS=4.5V 40 VGS=10V 30 VGS=10V ID=6A 1.6 1.4 VGS=4.5V ID=5A 1.2 1 0.8 20 0 5 10 15 20 0.6 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 ID=6A 60 1.0E+00 50 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ) -25 40 30 1.0E-02 25°C 1.0E-03 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. -40°C 1.0E-04 25°C 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4617 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 800 VDS=30V ID= 6A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 0 10 10 100.00 40 TJ(Max)=150°C TA=25°C 10µs 100µs 10m RDS(ON) limited 1ms 10s 0.1s 0.10 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 0 0.001 0.01 1 TJ(Max)=150°C TA=25°C 10 DC 0.1 40 30 Power (W) ID (Amps) 10.00 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1.00 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4617 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V -40 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -25 -2 -3 V 40 48 56 68 VGS=-4.5V, I D=-4A 61 75 VDS=-5V, ID=-5A 11 TJ=125°C gFS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA µA VSD Reverse Transfer Capacitance -5 ±150 Static Drain-Source On-Resistance Coss V TJ=55°C VGS=-10V, I D=-5A Crss Units -1 Zero Gate Voltage Drain Current IS Max VDS=-32V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, I D=-5A A mΩ mΩ S -0.76 -1 V 3.5 A 1006 pF 152 pF 77 pF 11 Ω 17.4 nC 8.9 nC 3.1 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.6 nC tD(on) Turn-On DelayTime 9.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-20V, RL=4Ω, RGEN=3Ω 6.3 ns 35.5 ns 26 ns 21.8 15.5 ns nC trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet≤t≤10s 10sthermal thermalresistance resistancerating. rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 80µs µs pulses, pulses, duty duty cycle cycle 0.5% 0.5% max. max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA The aSOA curve provides T A=25°C. curve provides single pulse rating. a single pulse rating. Rev 0 : October 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4617 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 30 -10V 25 VDS=-5V -5V -4.5V -6V 125°C 20 -40°C -4V 15 -3.5V 10 5 15 -ID(A) -ID (A) 20 10 5 VGS=-3V 0 0 1 2 3 25°C 4 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 2.5 3.5 4 4.5 5 5.5 Normalized On-Resistance 1.8 70 VGS=-4.5V 60 50 VGS=-10V 40 30 VGS=-10V ID=-5A 1.6 1.4 1.2 VGS=-4.5V ID=-4A 1 0.8 0.6 0 2 4 6 8 10 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 100 1.0E+00 ID=-5A 80 60 40 125°C 1.0E-01 125°C -IS (A) RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics 80 RDS(ON) (mΩ) 2 25°C 1.0E-02 25°C 1.0E-03 1.0E-04 -40°C 1.0E-05 20 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. 1.0 AO4617 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1400 VDS=-30V ID=-5A 1200 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 800 600 Coss 400 Crss 200 0 0 5 10 15 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 TJ(Max)=150°C, TA=25°C 30 100µs RDS(ON) limited Power (W) 1ms 1.00 10ms 1s 10s 0.10 0.1s DC 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 20 10 0.01 0.1 40 TJ(Max)=150°C TA=25°C 10µs 10.00 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 -ID (Amps) 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. 0.01 100 1000