AOP600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (V GS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS =- 4.5V) The AOP600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP600 is Pb-free (meets ROHS & Sony 259 specifications). AOP600L is a Green Product ordering option. AOP600 and AOP600L are electrically identical. D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 PDIP-8 p-channel n-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current TA=25°C ID IDM TA=70°C B TA=25°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. TJ, TSTG 6 -5.3 -30 2.5 1.6 1.6 -55 to 150 -55 to 150 RθJA RθJL Symbol t ≤ 10s Steady-State Steady-State -6.6 30 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Units V ±20 7.5 2.5 PD TA=70°C Max p-channel -30 V A W °C Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W Typ 38 66 30 Max 50 80 40 Units °C/W °C/W °C/W AOP600 n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C 5 VGS=10V, ID=7.5A VGS=4.5V, ID=6.0A gFS Forward Transconductance VSD Body Diode Forward Voltage IS=1A, VGS=0V Maximum Body-DiodeContinuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance. Coss Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Gate Source Charge VDS=5V, ID=7.5A 12 nA 1.8 3 V 22.6 28 33 43 A 16 0.76 680 VGS=0V, VDS=15V, f=1MHz VGS=4.5V, VDS=15V, ID=7.5A mΩ mΩ S 1 V 4 A 820 pF 102 pF 77 VGS=0V, VDS=0V, f=1MHz µA 100 TJ=125°C Static Drain-Source On-Resistance Units V VDS=24V, VGS=0V Zero Gate Voltage Drain Current IS Max 30 IDSS RDS(ON) Typ pF Ω 3 3.6 13.84 16.6 nC 6.74 8.1 nC 1.82 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 4.6 ns tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.0Ω, RGEN=6Ω 4.1 ns 20.6 ns 5.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs 16.5 Qrr Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs 7.8 20 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 4 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP600 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 25 20 6V 5V 4.5V ID(A) ID (A) 20 15 3.5V 10 12 8 125°C 4 VGS=3V 5 VDS=5V 16 4V 25°C 0 0 0 1 2 3 4 0 5 0.5 60 2 2.5 3 3.5 4 4.5 Normalized On-Resistance 1.7 50 RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 1.6 VGS=10V ID=7.5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=7.5A 50 IS Amps RDS(ON) (mΩ) 1 125°C 40 1.0E-01 125°C 1.0E-02 1.0E-03 30 25°C 25°C 1.0E-04 20 1.0E-05 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AOP600 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 1000 10 VDS=15V ID=7.5A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 Coss 200 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 10 100µs 1ms 20 25 30 TJ(Max)=150°C TA=25°C 30 10µs 10ms 0.1s 1 15 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10 VDS (Volts) Figure 8: Capacitance Characteristics Power W ID (Amps) 100 5 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOP600 p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 30 ±100 nA -2.4 V 28 35 37 45 VGS=-4.5V, ID=-5A 44 58 VDS=-5V, ID=-6.6A 13 TJ=125°C gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time A -0.76 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA -5 -2 Static Drain-Source On-Resistance Coss Units V TJ=55°C VGS=-10V, ID=-6.6A IS Max -1 VDS=-24V, VGS=0V IDSS RDS(ON) Typ VGS=-10V, VDS=-15V, ID=-6.6A VGS=-10V, VDS=-15V, RL=2.3Ω, RGEN=3Ω mΩ mΩ S -1 V -4.2 A 1100 pF 190 pF 122 pF 3.6 4.4 Ω 18.5 22.2 nC 9.6 11.6 nC 2.7 nC 4.5 nC 7.7 ns 5.7 ns 20.2 ns 9.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-6.6A, dI/dt=100A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs 8.8 24 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given en application application depends depends on on thethe user's user's specific specific board board design. design. TheThe current current rating rating is based is based on on thethe t t≤ 10s ≤ 10s thermal thermal resistance resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. Rev 4 : Sept 2005 AOP600 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -6V -5V VDS=-5V 25 20 20 -4V -ID(A) -ID (A) 30 -4.5V 15 -3.5V 10 15 10 125°C 5 5 VGS=-3V 25°C 0 0 0 1 2 3 4 0 5 0.5 1 60 2.5 3 3.5 4 4.5 5 1.6 ID=-6.6A 55 Normalized On-Resistance VGS=-4.5V 50 45 RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 35 VGS=-10V 30 25 20 15 10 0 5 10 15 20 25 1.4 VGS=-10V VGS=-4.5V 1.2 1 0.8 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 65 1.0E+00 ID=-6.6A 60 1.0E-01 55 50 45 -IS (A) RDS(ON) (mΩ) 1.5 125°C 40 35 125°C 1.0E-02 1.0E-03 1.0E-04 30 25°C 25 20 3 4 5 6 25°C 1.0E-05 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP600 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-6.6A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 4 8 12 16 0 20 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 0.1s 20 25 30 TJ(Max)=150°C TA=25°C 30 Power (W) RDS(ON) 10.0 limited 1ms 10ms 1s 20 10 10s DC 0 0.001 0.1 0.1 15 40 TJ(Max)=150°C, TA=25°C 1.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) Crss 250 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000