e PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 1.6–1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 16 +24V Output Power (Watts) 14 +26V 12 +22V 2007 9 10 LOT COD E 8 6 4 f = 1.65 GHz ICQ = 100 mA 2 0 0.00 0.50 1.00 1.50 2.00 Package 20209 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.4 Adc Total Device Dissipation at Tflange = 25° C PD Above 25° C derate by 52 Watts 0.29 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70° C) RθJC 3.4 °C/W 1 9/28/98 e PTB 20079 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IC = 15 mA, RBE = 22 Ω V(BR)CER 55 — — Vdc Breakdown Voltage E to B IE = 10 mA V(BR)EBO 4.0 — — Vdc DC Current Gain IC = 1 A, VCE = 5 V hFE 20 — 100 — Symbol Min Typ Max Units Power Gain, Common-Emitter (VCC = 26 Vdc, POUT = 3 W, ICQ = 120 mA, f = 1.65 GHz) Gpe 10.5 11 — dB Efficiency (VCC = 26 Vdc, POUT = 10 W, ICQ = 120 mA, f = 1.65 GHz) ηC 37 40 — % P-1dB 10.0 12 — Watts RF Specifications (100% Tested) Characteristic Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 120 mA, f = 1.65 GHz) Impedance Data (data shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 10 W, ICQ = 120 mA Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.6 3.9 -4.7 6.1 -0.7 1.65 3.1 -3.8 6.1 0.0 1.7 2.3 -3.7 6.1 0.7 2 5/6/98 Z0 = 50 Ω e PTB 20079 Typical Performance Gain vs. Frequency Power-Added Efficiency vs. Pout (as measured in a broadband circuit) Power-Added Efficiency (%) 13 12 Gain (dB) +26 V +24 V 11 +22 V 10 9 8 1.60 POUT = 10 W ICQ = 100 mA 60 f = 1.65 GHz ICQ = 100 mA 50 + 24 V + 26 V 40 30 + 22 V VCC 20 10 0 1.62 1.64 1.66 1.68 1.70 0 Intermodulation Distortion (dB) Frequency (GHz) 4 8 12 16 Power Output (Watts) 3rd Order IMD vs. PEP 0 -10 800 mA 400 mA -20 ICQ -30 200 mA -40 VCC = 24 V f1 = 1650.0 MHz 100 mA -50 f2 = 1650.2 MHz -60 0 5 10 15 20 Output Power (PEP) (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20079 Uen Rev. C 09-28-98