KAF-1001E Performance Specification KAF - 1001E 1024(H) x 1024(V) Pixel Enhanced Response Full-Frame CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650 Revision 1 February 19, 2001 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] KAF-1001E Performance Specification TABLE OF CONTENTS 1.1 Features ........................................................................................................................................... 3 1.2 Description ...................................................................................................................................... 3 1.3 Architecture..................................................................................................................................... 4 1.4 Image Acquisition ........................................................................................................................... 4 1.5 Charge Transport............................................................................................................................. 4 1.6 Output Structure .............................................................................................................................. 4 2.1 Package Configuration .................................................................................................................... 5 2.2 Pin Description................................................................................................................................ 6 3.1 Absolute Maximum Ratings ........................................................................................................... 8 3.2 DC Operating Conditions................................................................................................................ 8 3.3 AC Clock Level Conditions ............................................................................................................ 9 3.4 AC Timing..................................................................................................................................... 10 4.1 Image Specifications ..................................................................................................................... 12 4.2 Defect Classification ..................................................................................................................... 14 4.3 Typical Performance Data............................................................................................................. 15 5.1 Quality Assurance and Reliability................................................................................................. 17 5.2 Ordering Information .................................................................................................................... 17 6.1 Revision Changes.......................................................................................................................... 18 FIGURES Figure 1 Functional Block Diagram ...................................................................................................... 3 Figure 2 Package Configuration............................................................................................................ 5 Figure 3 Pinout Diagram ....................................................................................................................... 7 Figure 4 Timing Diagram.................................................................................................................... 12 Figure 5 Typical Spectral Response .................................................................................................... 15 Figure 6 Dark Current as a Function of Temperature ......................................................................... 16 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 2 Revision No. 1 KAF-1001E Performance Specification 1.1 Features • Front Illuminated Full-Frame Architecture with Blue Plus Transparent Gate True Two Phase Technology for high sensitivity • 1024(H) x 1024(V) Photosensitive Pixels • 24µm(H) x 24µm(V) Pixel Size • 24.5 mm x 24.5 mm Photo active Area • 1:1 Aspect Ratio • 100% Fill Factor • • • • Single Readout Register 2 Clock Selectable Outputs High Gain Output (11 µV/e-) for low noise Low Gain Output (2.0 µV/e-) for high dynamic range Low Dark Current (<30 pA/cm2 @ T=25oC) • 1.2 Common applications include medical, scientific, military, machine and industrial vision. The sensor is built with a true two-phase CCD technology employing a transparent gate. This technology simplifies the support circuits that drive the sensor and reduces the dark current without compromising charge capacity. The transparent gate results in spectral response increased ten times at 400nm, compared to a front side illuminated standard polysilicon gate technology. The sensitivity is increased 50% over the rest of the visible wavelengths. The clock selectable on-chip output amplifiers have been specially designed to meet two different needs. The first is a high sensitivity 2-stage output with 11µV/e- charge to voltage conversion ratio. The second is a single-stage output with 2µV/e- charge to voltage conversion ratio. Description The KAF-1001E is a high-performance, silicon charge-coupled device (CCD) designed for a wide range of image sensing applications in the 0.4mm to 1.1mm wavelength band. 4 Dark Lines φV1 KAF-1001E φV2 Usable Active Image Area 1024(H) x 1024(V) 24µm x 24µm pixels φH22 Sub Vdd 2 Vout 2 Vss FD 1 Guard FD 2 4 Dark Lines 1024 Active Pixels/Line Vdd 1 Vout 1 φR Vrd Vog φH21 4 Dark 4 Inactive 8 Dark 2 Inactive φH1 φH2 Figure 1 - Functional Block Diagram (Shaded areas represent 4 non-imaging pixels at the beginning and 8 non-imaging pixels at the end of each line. There are also 4 non-imaging lines at the top and bottom of each frame.) Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 3 Revision No. 1 KAF-1001E Performance Specification 1.3 φV1 and φV2 now reverse their polarity causing the charge packets to 'spill' forward under the φV2 gate of the next pixel. The rising edge of φV2 also transfers the first line of charge into the horizontal CCD. A second phase transition places the charge packets under the φV1 electrode of the next pixel. The sequence completes when φV1 is brought low. Clocking of the vertical register in this way is known as accumulation mode clocking. Next, the horizontal CCD reads out the first line of charge using traditional complementary clocking (using φH1 and φH2 pins) as shown. The falling edge of φH2 forces a charge packet over the output gate (OG) onto one of the output nodes (floating diffusion) which controls the output amplifier. The cycle repeats until all lines are read. Architecture Refer to the block diagram in Figure 1. The KAF1001E consists of one vertical (parallel) CCD shift register, one horizontal (serial) CCD shift register and a selectable high or low gain output amplifier. Both registers incorporate true two-phase buried channel technology. The vertical register consists of 24µm x 24µm photo-capacitor sensing elements (pixels) which also serves as the transport mechanism. The pixels are arranged in a 1024(H) x 1024(V) array; an additional 12 columns (4 at the left and 8 at the right) and 8 rows (4 each at top and bottom) of non-imaging pixels are added as dark reference. Because there is no storage array, this device must be synchronized with strobe illumination or shuttered during readout. 1.4 Image Acquisition An image is acquired when incident light, in the form of photons, falls on the array of pixels in the vertical CCD register and creates electron-hole pairs (or simply electrons) within the silicon substrate. This charge is collected locally by the formation of potential wells created at each pixel site by induced voltages on the vertical register clock lines (φV1, φV2). These same clock lines are used to implement the transport mechanism as well. The amount of charge collected at each pixel is linearly dependent on light level and exposure time and non-linearly dependent on wavelength until the potential well capacity is exceeded. At this point charge will 'bloom' into vertically adjacent pixels. 1.5 1.6 Output Structure The final gate of the horizontal register is split into two sections, φH21 and φH22. The split gate structure allows the user to select either of the two output amplifiers. To use the high dynamic range singlestage output (Vout1), tie φH22 to a negative voltage to block charge transfer, and tie φH21 to φH2 to transfer charge. To use the high sensitivity two-stage output (Vout2), tie φH21 to a negative voltage and φH22 to φH2. The charge packets are then dumped onto the appropriate floating diffusion output node whose potential varies linearly with the quantity of charge in each packet. The amount of potential change is determined by the simple expression ∆Vfd=∆Q/Cfd. The translation from electrons to voltages is called the output sensitivity or charge-tovoltage conversion. After the output has been sensed off-chip, the reset clock (φR) removes the charge from the floating diffusion via the reset drain (VRD). This, in turn, returns the floating diffusion potential to the reference level determined by the reset drain voltage. Charge Transport Integrated charge is transported to the output in a two step process. Rows of charge are first shifted line by line into the horizontal CCD. 'Lines' of charge are then shifted to the output pixel by pixel. Referring to the timing diagram, integration of charge is performed with φV1 and φV2 held low. Transfer to horizontal CCD begins when φV1 is brought high causing charge from the φV1 and φV2 gates to combine under the φV1 gate. Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 4 Revision No. 1 KAF-1001E Performance Specification 2.1 Package Configuration Figure 2 - Package Drawing Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 5 Revision No. 1 KAF-1001E Performance Specification 2.2 Pin Description Pin Number Symbol Description Notes 1, 4, 26 2, 21, 25 SUBSTRATE φV2 Substrate Vertical (Parallel) CCD Clock - Phase 2 2 3, 22, 24 Vertical (Parallel) CCD Clock - Phase 1 1 5 φV1 VOUT2 6 VDD2 7 VLG First Stage Load Transistor Gate for Two-Stage Amplifier 8 VSS Output Amplifier Return 9 10 φR VRD Reset Drain 11 VDD1 High Dynamic Range Single-Stage Amplifier Supply 12 VOUT1 13 OG 14 φH21 Last Horizontal (Serial) CCD Phase - Split Gate 15 φH22 Last Horizontal (Serial) CCD Phase - Split Gate 16 φH1 Horizontal (Serial) CCD Clock - Phase 1 17 18, 19, 20 φH2 N/C No Connect 23 GUARD Guard Ring Video Output from High Sensitivity Two-Stage Amplifier High Sensitivity Two-Stage Amplifier Supply Reset Clock Video Output from High Dynamic Range Single-Stage Amplifier Output Gate Horizontal (Serial) CCD Clock - Phase 2 Notes: 1. Pins 3, 22, and 24 must be connected together - only one Phase 1 clock driver is required 2. Pins 2, 21, and 25 must be connected together - only one Phase 2 clock driver is required Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 6 Revision No. 1 KAF-1001E Performance Specification SUB φ V2 1 Pixel (1024,1024) 2 26 SUB 25 φV2 φV1 φV1 3 24 SUB 4 23 GUARD VOUT2 5 22 φV1 VDD2 6 21 φV2 VLG 7 20 N/C VSS 8 19 N/C φR 9 18 N/C VRD 10 17 φH2 VDD1 11 16 φH1 VOUT1 12 15 φH22 14 φH21 VO G Pixel (1,1) 13 Figure 3 - Pin Identification Diagram Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 7 Revision No. 1 KAF-1001E Performance Specification 3.1 Absolute Minimum/Maximum Ratings Temperature Voltage Current Capacitance Frequency/Time Storage Operating All Clocks OG VRD, VSS, VDD, GUARD Output Bias Current (IDD) Output Load Capacitance (CLOAD) φV1, φV2 Pulse Width φH1, φH2 φR Pulse Width Min. -100 -50 -16 0 0 Max. +80 +50 +16 +8 +20 10 10 Units C Conditions At Device V VSUB = OV mA pF µs MHz ns 8 5 20 Warning: For maximum performance, built-in gate protection has been added only to the OG pin. These devices require extreme care during handling to prevent electrostatic discharge (ESD) induced damage. 3.2 DC Operating Conditions VSUB VDD Substrate Output Amplifier Supply Min. 0.0 15.0 Nom. 0.0 +17.0 Max. 0.0 17.5 Units V V VSS VRD OG GUARD VLG Output Amplifier Return Reset Drain Output Gate Guard Ring Load Gate 1.4 11.5 3.0 7.0 0.5 +2.0 +12 +4.0 +10.0 +0.0 2.1 12.5 4.5 15.0 1.0 V V V V V Pin Impedance Common 5 pf, 2K? (Note 1) 5 pf, 2K? 5 pf, 1M? 5 pf, 10M? 350 pF, 10M? Notes: 1. Vdd = 17 volts for applications where the expected output voltage > 2.0 volts. For applications where the expected useable output voltsge is <2 volts, Vdd can be reduced to 15 volts. Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 8 Revision No. 1 KAF-1001E Performance Specification 3.3 AC Clock Level Conditions φV1 Vertical Clock Phase 1 φV2 Vertical Clock Phase 2 φH1 Horizontal Clock Phase 1 φH2 Horizontal Clock Phase 2 φR Reset Clock φH21 φH22 Horizontal Clock - Phase 1 Horizontal Clock - Phase 2 Low Min. -10.25 Nom. -10 Max. -9.8 Units V Pin Impedance 200nF, 10MΩ High Low 0.0 -10.25 0 -10.0 1.0 -9.8 V V 200nF, 10MΩ High Low 0.0 -2.2 0 -2.0 1.0 -1.8 V V CφV1-V2 = 100nF 400pF, 10MΩ High Low 7.8 -2.2 +8.0 -2.0 8.2 -1.8 V V 250pF, 10MΩ High Low High 7.8 2.0 9.5 +8.0 3.0 10.0 8.2 3.5 11.0 V V V Cφh1-h2 =200pF 10pF, 10MΩ Using the High Gain Output (Vout2) Min. Nom. Max. Using the High Dynamic Range Output (Vout1) Min. Nom Max. Units φH2 V φH2 V Low φH2 low φH2 low φH2 High φH2 Low -4 High -4 φH2 low φH2 low -4 -4 φH2 low φH2 low φH2 low φH2 low V Pin Impedance 10pF, 10MΩ 10pF, 10MΩ V Notes: 1. When using Vout1 φH21 is clocked identically with φH2 while φH22 is held at a static level. When using Vout2 φH21 and φH22 are exchanged so that φH22 is identical to φH2 and φH21 is held at a static level. The static level should be the same voltage as φH2 low. 2. The AC and DC operating levels are for room temperature operation. Operation at other temperatures may require adjustments of these voltages. Pins shown with impedances greater than 1 MOhm are expected resistances. These pins are only verified to 1 MOhm. 3. φV1, 2 capacitances are accumulated gate oxide capacitance, and so are an over-estimate of the capacitance. 4. This device is suitable for a wide range of applications requiring a variety of different operating conditions. Consult Eastman Kodak in those situations in which operating conditions meet or exceed minimum or maximum levels. Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 9 Revision No. 1 KAF-1001E Performance Specification 3.4 AC Timing Chart Description φH1, φH2 Clock Frequency φV1, φV2 Clock Frequency Pixel Period (1 Count) φH1, φH2 Setup Time φV1, φV2 Clock Pulse Width Reset Clock Pulse Width Readout Time Integration Time Line Time Symbol fH fV tpix tφHS tφV tφR treadout tint tline Min. 200 500 4 20 226 Nom. 4 100 250 1000 5 60 286 219 277 Max. 5 125 Units MHz kHz ns ns µs ns ms µs Notes 1, 2, 3 1, 2, 3 2 4 5 6 7 Notes: 1. 50% duty cycle values. 2. CTE may degrade above the nominal frequency. 3. Rise and fall times (10/90% levels) should be limited to 5-10% of clock period. Crossover of register clocks should be between 4060% of amplitude. 4. φR should be clocked continuously 5. treadout = (1032 * tline) 6. Integration time (tint) is user specified. Longer integration times will degrade noise performance due to dark signal fixed pattern and shot noise. 7. tline= (3 * tφV) + tφHS + 1044* tpix + tpix Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 10 Revision No. 1 KAF-1001E Performance Specification AC Timing Diagram Note: This device is suitable for a wide range of applications requiring a variety of different timing frequencies. Therefore, only maximum and minimum values are shown above. Consult Eastman Kodak in those situations that require special consideration Frame Timing tint tReadout 1 Frame = 1032 lines φV1 φV2 Line 1 2 1031 1032 φH1 φH2 Pixel Timing Detail Line Timing Detail tφR 1 line tφV φV1 φV2 φ R φH1 tφV tpix tφHS tpix φH1 1 count φH2 φH2 Vout 1044 counts Vsat φR Vpix Vdark Vsub Line Content 1-4 5-8 9-1032 1033-1042 Vodc 1043-1044 Vsat Saturated pixel video output signal Photoactive Pixels Dark Reference Pixels Dummy Pixels Vdark Video output signal in no-light situation, not zero due to Jdark Vpix Pixel video output signal level; more electrons = more negative Vodc Video level offset with respect to vsub* Vsub Analog Ground * See Image Acquisition section Figure 4 - Timing Diagram Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 11 Revision No. 1 KAF-1001E Performance Specification 4.1 Image Specifications All values derived using nominal operating conditions with the recommended timing. Correlated doubling sampling of the output is assumed and recommended. Many units are expressed in electrons - to convert to voltage, multiply by the amplifier sensitivity. Electro-Optical Symbol FF PRNU QE Parameter Optical Fill Factor Photoresponse Non-uniformity Quantum Efficiency (450, 550, 650nm) Min. Nom. 100 Max. 5 Units % % rms Condition Full Array See QE curve CCD Parameters Common To both Outputs Symbol Ne-sat Jd Parameter Sat. Signal - Vccd register Dark Current DCDR Dark Current Doubling Temp DSNU CTE tVH Bs Dark Signal Non-uniformity Charge Transfer Efficiency V-H CCD Transfer Time Blooming Suppression Min. 450 5 Nom. 500 15.3 550 Max. 30 1080 6 7 1080 .99997 32 none Units ke pA/cm2 e pixel/sec Condition Note 2 25°C (mean of all pixels) o C e-/pix/sec µs Note 4 Note 5 Notes 6, 7 CCD Parameters Specific to High Gain Output Amplifier Symbol Vout/NeNe-sat ne-total FH DR Parameter Output Sensitivity Sat. Signal Total Sensor Noise Horizontal CCD Frequency: Dynamic Range : Min. 9 180 Nom. 11 200 13 2 83 79 Max. 240 20 5 Units uV/electron ke- Condition e- rms Note 1 Note 8 MHz dB Note 6 Note 9 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 12 Revision No. 1 KAF-1001E Performance Specification CCD Parameters Specific to Low Gain (high dynamic range) Output Amplifier Symbol Vout/NeNe-sat ne-total FH DR Parameter Output Sensitivity Sat. Signal Total Sensor Noise Horizontal CCD Frequency: Dynamic Range : Min. 1.7 1400 Nom. 2 1500 22 0.5 87 89 Max. 1800 30 2 Units uV/electron ke- Condition e- rms Note 3 Note 8 MHz dB Note 6 Note 9 Notes: 1. Point where the output saturates when operated with nominal voltages. 2. Signal level at the onset of blooming in the vertical (parallel) CCD register 3. Maximum signal level at the output of the high dynamic range output. This signal level will only be achieved when binning pixels containing large signals. 4. None of 64 sub arrays (128 x 128) exceed the maximum dark current specification. 5. For 2MHz data rate and T = 30 C to -40°C. 6. Using maximum CCD frequency and/or minimum CCD transfer times may compromise performance 7. Time between the rising edge of φV1 and the first falling edge of φH1 8. At Tintegration = 0; data rate = 1 MHz; temperature = -30 C 9. Uses 20LOG(Ne- sat / ne- total) where Ne- sat refers to the appropriate saturation signal. Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 13 Revision No. 1 KAF-1001E Performance Specification 4.2 Cosmetic Grades Standard: Class C1 C2 C3 Point Defects 20 40 80 Cluster Defects 2 10 20 Column Defects 0 0 10 10 0 UV Enhanced: U2 40 Note 1 Notes: 1. Sensors with an UV enhancement coating are available with the same cosmetic grade as the uncoated C2. Dark Defect A pixel which deviates by more than 20% from neighboring pixels when illuminated to 70% of saturation Bright Defect A pixel whose dark current exceeds 4500 electrons/pixel/second at 25°C Cluster Defect A grouping of not more than 5 adjacent point defects. Column Defect 1) 2) 3) 4) Neighboring Pixels A grouping point defects along a single column. (Dark Column) A column that contains a pixel whose dark current exceeds 150,000 electrons/pixel/second at 25 C. (Bright Column) A column that does not exhibit the minimum charge capacity specification. (Low charge capacity) A column that loses >500 electrons when the array is illuminated to a signal level of 2000 electrons/pix. (Trap like defects) The surrounding 128 x 128 pixels of ± 64 columns/rows Defects are separated by no less than 3 pixels in any one direction. 1,1024 1024,1024 All pixels subject to defect specification 1,1 1024,1 Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 14 Revision No. 1 KAF-1001E Performance Specification 4.3 Typical Performance Data Kodak Full Frame Image Sensor Spectral Response 1 Absolute Quantum Efficiency 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) KAF-1001E : 24 um pixel KAF-1401E: 6.8 um pixel Figure 5 - Typical Spectral Response Figure 5 shows a representative spectral response of front side illuminated transparent gate full frame image sensors. The KAF-1001E with 24µm pixels has higher response than the 6.8µm pixel sensor at wavelengths greater than 750nm because it is constructed on a lower resistivity silicon substrate. The resulting collection volume of each pixel more efficiently collects signal generated deeper within the silicon. Most of the two phase CCD pixels are designed so that each of the electrodes occupies half of the pixel area. The KAF1001E was not designed this way but instead is designed with the transparent electrode occupying greater than half the pixel area. This further improves the benefits of the transparent gate. Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 15 Revision No. 1 KAF-1001E Performance Specification KAF-1001E Dark Current Electrons/pixel/sec 1000 100 10 1 -20 -10 0 10 20 30 Temperature (C) Figure 6 - Dark Current as a Function of Temperature Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 16 Revision No. 1 KAF-1001E Performance Specification 5.1 Quality Assurance and Reliability 5.1.1 Quality Strategy: All devices will conform to the specifications stated in this document. This is accomplished through a combination of statistical process control and inspection at key points of the production process. 5.1.2 Replacement: All devices are warranted against failure in accordance with the terms of Terms of Sale. 5.1.3 Cleanliness: Devices are shipped free of contamination, scratches, etc. that would cause a visible defect. 5.1.4 ESD Precautions: Devices are shipped in a static-safe container and should only be handled at static-safe workstations. 5.1.5 Reliability: Information concerning the quality assurance and reliability testing procedures and results are available from the Image Sensor Solutions and can be supplied upon request. 5.1.6 Test Data Retention: Devices have an identifying number of traceable to a test data file. Test data is kept for a period of 2 years after date of shipment. 5.2 Ordering Information Address all inquiries and purchase orders to: Image Sensor Solutions Eastman Kodak Company Rochester, New York 14650-2010 Phone: (716) 722-4385 Fax: (716) 477-4947 E-mail: [email protected] Kodak reserves the right to change any information contained herein without notice. All information furnished by Kodak is believed to be accurate. Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 17 Revision No. 1 KAF-1001E Performance Specification 6.1 Revision Changes: Revision Number 0 1 Description of Changes Initial formal version. Section 4.1, CCD Parameters Common to both Outputs: Ne-sat (Sat. Signal – Vccd Register: Minimum changed from 550 to 450ke Nominal changed from 650 to 500ke. Update for name change from Microelectronics Technology Division to Image Sensor Solutions. Eliminated Appendix 1 - Available Part Numbers Added Section 6.1: Revision Changes. Changes are in red. Eastman Kodak Company – Image Sensor Solutions - Rochester, NY 14650-2010 Phone (716) 722-4385 Fax (716) 477-4947 Web: www.kodak.com/go/ccd E-mail: [email protected] 18 Revision No. 1