2N2484 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2484J) • JANTX level (2N2484JX) • JANTXV level (2N2484JV) • JANS level (2N2484JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-18 metal can Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/376 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 60 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 50 mA Power Dissipation, TA = 25°C Derate linearly above 25°C PT 360 2.06 RθJA 325 mW mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2484 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO ICES IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 60 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150°C VCE = 5 Volts VCE = 45 Volts VEB = 6 Volts VEB = 5 Volts On Characteristics Min 60 Typ Max 10 5 10 2 5 10 2 Units Volts µA nA µA nA nA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE7 DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage VBE VCEsat1 Test Conditions IC = 1 µA, VCE = 5 Volts IC = 10 µA, VCE = 5 Volts IC = 100 µA, VCE = 5 Volts IC = 500 µA, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 10 µA, VCE = 5 Volts TA = -55°C VCE = 5 Volts, 100 µA IC = 1 mA, IB = 100 µA Min Test Conditions VCE = 5 Volts, IC = 50 µA, f = 5 MHz VCE = 5 Volts, IC = 500 µA, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 µA, Rg = 10 kΩ f = 100 Hz f = 1 kHz f = 10 kHz VCE = 5 Volts, IC = 10 µA, Rg = 10 kΩ, 10Hz < Noise BW <15.7kHz Min VCB = 5V, IC = 1mA, f = 1kHz 3.5 Typ 45 200 225 250 250 225 35 Max Units 500 675 800 800 800 0.5 0.7 0.3 Volts Volts Max Units Dynamic Characteristics Parameter Symbol Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio |hFE|1 |hFE|2 hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Noise Figure NF1 NF2 NF3 Noise Figure (wideband) NF4 Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit Rev Volt Transfer Ratio hie hoe hre Copyright 2002 Rev. F Typ 3 2 7 250 900 5 pF 6 pF 7.5 3 2 dB 3 dB 24 40 8x10-4 kΩ µmhos Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2