MICROSEMI 2N2484

2N2484
Silicon NPN Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose
• Low power
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2484J)
• JANTX level (2N2484JX)
• JANTXV level (2N2484JV)
• JANS level (2N2484JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Features
•
•
•
•
Hermetically sealed TO-18 metal can
Also available in chip configuration
Chip geometry 0307
Reference document:
MIL-PRF-19500/376
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
TC = 25°C unless otherwise specified
Symbol
VCEO
Rating
60
Collector-Base Voltage
VCBO
60
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
6
Volts
Collector Current, Continuous
IC
50
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C
PT
360
2.06
RθJA
325
mW
mW/°C
°C/W
TJ
-65 to +200
°C
TSTG
-65 to +200
°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N2484
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Symbol
V(BR)CEO
ICBO1
ICBO2
ICBO3
ICEO
ICES
IEBO1
IEBO2
Test Conditions
IC = 10 mA
VCB = 60 Volts
VCB = 45 Volts
VCB = 45 Volts, TA = 150°C
VCE = 5 Volts
VCE = 45 Volts
VEB = 6 Volts
VEB = 5 Volts
On Characteristics
Min
60
Typ
Max
10
5
10
2
5
10
2
Units
Volts
µA
nA
µA
nA
nA
µA
nA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE7
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
VBE
VCEsat1
Test Conditions
IC = 1 µA, VCE = 5 Volts
IC = 10 µA, VCE = 5 Volts
IC = 100 µA, VCE = 5 Volts
IC = 500 µA, VCE = 5 Volts
IC = 1 mA, VCE = 5 Volts
IC = 10 mA, VCE = 5 Volts
IC = 10 µA, VCE = 5 Volts
TA = -55°C
VCE = 5 Volts, 100 µA
IC = 1 mA, IB = 100 µA
Min
Test Conditions
VCE = 5 Volts, IC = 50 µA,
f = 5 MHz
VCE = 5 Volts, IC = 500 µA,
f = 30 MHz
VCE = 5 Volts, IC = 1 mA,
f = 1 kHz
VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
VCE = 5 Volts, IC = 10 µA,
Rg = 10 kΩ
f = 100 Hz
f = 1 kHz
f = 10 kHz
VCE = 5 Volts, IC = 10 µA,
Rg = 10 kΩ,
10Hz < Noise BW <15.7kHz
Min
VCB = 5V, IC = 1mA, f = 1kHz
3.5
Typ
45
200
225
250
250
225
35
Max
Units
500
675
800
800
800
0.5
0.7
0.3
Volts
Volts
Max
Units
Dynamic Characteristics
Parameter
Symbol
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
|hFE|1
|hFE|2
hFE
Open Circuit Output Capacitance
COBO
Open Circuit Input Capacitance
CIBO
Noise Figure
NF1
NF2
NF3
Noise Figure (wideband)
NF4
Short Circuit Input Impedance
Open Circuit Output Admittance
Open Circuit Rev Volt Transfer Ratio
hie
hoe
hre
Copyright 2002
Rev. F
Typ
3
2
7
250
900
5
pF
6
pF
7.5
3
2
dB
3
dB
24
40
8x10-4
kΩ
µmhos
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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