SEMICOA 2N5109_02

2N5109
Silicon NPN Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose
• VHF-UHF amplifier transistor
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5109J)
• JANTX level (2N5109JX)
• JANTXV level (2N5109JV)
• JANS level (2N5109JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Features
• Radiation testing (total dose) upon request
•
•
•
•
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 1009
Reference document:
MIL-PRF-19500/453
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
TC = 25°C unless otherwise specified
Symbol
Rating
Collector-Emitter Voltage
VCEO
20
Collector-Base Voltage
VCBO
40
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
3
Volts
IC
400
mA
1
5.71
2.9
16.6
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Copyright 2002
Rev. D
RθJA
175
W
mW/°C
W
mW/°C
°C/W
TJ
-65 to +200
°C
TSTG
-65 to +200
°C
PT
PT
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N5109
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100 µA
40
Units
Volts
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 5 mA
20
Volts
Collector-Emitter Breakdown Voltage
V(BR)CER
IC = 5 mA, RBE = 10 Ω
40
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO
3
Volts
Collector-Emitter Cutoff Current
ICEO1
ICEO2
IE = 100 µA
VCE = 15 Volts
VCE = 15 Volts, TA = 175°C
On Characteristics
Min
Typ
Max
20
5
µA
mA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
DC Current Gain
Collector-Emitter Saturation Voltage
VCEsat
Test Conditions
IC = 50 mA, VCE = 15 Volts
IC = 50 mA, VCE = 5 Volts
TA = -55°C
IC = 100 mA, IB = 10 mA
Min
40
15
Test Conditions
VCE = 15 Volts, f = 200 MHz,
IC = 25 mA
IC = 50 mA
IC = 100 mA
VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VCC = 15 Volts, IC = 50 mA,
f = 200 MHz, Pin = -10 dB
VCC = 15 Volts, IC = 50 mA,
54 dB output
VCC = 15 Volts, IC = 10 mA,
f = 200 MHz, Pin = -10 dB
VCC = 15 Volts, IC = 50 mA,
50 MHz < f < 216 MHz,
Pin = -10dB
Min
Typ
Max
150
Units
0.5
Volts
Max
Units
Dynamic Characteristics
Parameter
Symbol
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE1|
|hFE2|
|hFE3|
Open Circuit Output Capacitance
COBO
Power Gain (narrow band) current
GPE
Cross Modulation
cm
Noise Figure
NF
Voltage Gain (wideband)
G
Copyright 2002
Rev. D
Typ
5
6
5
10.0
11.0
10.5
3.5
dB
11
11
pF
-57
dB
3.5
dB
dB
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2