2N3501UB Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3501UBJ) • JANTX level (2N3501UBJX) • JANTXV level (2N3501UBJV) • JANS level (2N3501UBJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 5620 Reference document: MIL-PRF-19500/366 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 150 Collector-Base Voltage VCBO 150 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts IC 300 mA PT .5 3.08 RθJA 325 W mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C Collector Current, Continuous O Power Dissipation, TA = 25 C Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Copyright© 2004 Rev. J.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3501UB Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions IC = 10 mA Min Typ Max Units Volts 150 Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 VCB = 150 Volts VCB = 75 Volts VCB = 75 Volts, TA = 150°C 10 50 50 Collector-Emitter Cutoff Current ICEO VCE = 120 Volts 1 µA nA µA µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 6 Volts VEB = 4 Volts 10 25 µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE7 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 1500 mA, VCE = 10 Volts IC = 300 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA Min 35 50 75 100 20 45 Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 10 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 0.5 mA, f = 1 kHz, Rg = 1 kΩ VCE = 10 Volts, IC = 0.5 mA, f = 10 kHz, Rg = 1 kΩ Min Typ Max Units 300 0.8 1.2 0.2 0.4 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO NF1 Noise Figure NF2 Typ 1.5 8 75 375 8 pF 80 pF 16 dB 6 Switching Characteristics Saturated Turn-On Time tON Saturated Turn-Off Time tOFF Copyright© 2004 Rev. J.2 VEB = 5 Volts, IC = 150 mA, IB1 = 15 mA IC = 150 mA, IB1=IB2=15 mA 115 ns 1,150 ns Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2