2N5238 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5238J) • JANTX level (2N5238JX) • JANTXV level (2N5238JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 3111 Reference document: MIL-PRF-19500/394 Benefits • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 170 Collector-Base Voltage VCBO 200 Unit Volts Volts Emitter-Base Voltage VEBO 10 Volts IC 10 A 1 5.7 5 50 .175 .020 W mW/°C W mW/°C -65 to +200 °C Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C PT PT Thermal Resistance RθJA RθJC Operating Junction Temperature Storage Temperature TJ TSTG Copyright 2002 Rev. F °C/W Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5238 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 100 mA Typ Max Units Volts 170 Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 200 Volts VCB = 80 Volts, 10 100 Collector-Emitter Cutoff Current ICEO VCE = 160 Volts 10 µA nA µA Collector-Emitter Cutoff Current ICEX1 ICEX2 VCE = 160Volts, VEB= .5Volts VCE = 160Volts, VEB= .5Volts, TA = 150°C VEB = 7 Volts VEB = 5 Volts 10 100 µA 10 100 µA nA Emitter-Base Cutoff Current IEBO1 IEBO2 On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 1 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts TA = -55°C IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A Min 50 40 10 20 Test Conditions VCE = 10 Volts, IC = 200 mA, f = 10 MHz VCE = 5 Volts, IC = 50 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max 225 120 Units 1.5 2.5 0.6 2.5 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| hFE COBO Typ 1.5 7.5 40 250 350 pF 50 500 1.5 500 ns Switching Characteristics Delay Time Rise Time Storage Time Fall Time Copyright 2002 Rev. F td tr ts tf IC = 5 A, IB = 500 mA, IC = 5 A, IB1=IB2 = 500 mA µs ns Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2