SEMICOA 2N5238

2N5238
Silicon NPN Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose
• Low power, High voltage
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5238J)
• JANTX level (2N5238JX)
• JANTXV level (2N5238JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
•
•
•
•
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 3111
Reference document:
MIL-PRF-19500/394
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
TC = 25°C unless otherwise specified
Symbol
VCEO
Rating
170
Collector-Base Voltage
VCBO
200
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
10
Volts
IC
10
A
1
5.7
5
50
.175
.020
W
mW/°C
W
mW/°C
-65 to +200
°C
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C
PT
PT
Thermal Resistance
RθJA
RθJC
Operating Junction Temperature
Storage Temperature
TJ
TSTG
Copyright 2002
Rev. F
°C/W
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N5238
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Collector-Emitter Breakdown Voltage
V(BR)CEO
Test Conditions
Min
IC = 100 mA
Typ
Max
Units
Volts
170
Collector-Base Cutoff Current
ICBO1
ICBO2
VCB = 200 Volts
VCB = 80 Volts,
10
100
Collector-Emitter Cutoff Current
ICEO
VCE = 160 Volts
10
µA
nA
µA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE = 160Volts, VEB= .5Volts
VCE = 160Volts, VEB= .5Volts,
TA = 150°C
VEB = 7 Volts
VEB = 5 Volts
10
100
µA
10
100
µA
nA
Emitter-Base Cutoff Current
IEBO1
IEBO2
On Characteristics
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 1 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 10 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
TA = -55°C
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
IC = 5 A, IB = 500 mA
IC = 10 A, IB = 1 A
Min
50
40
10
20
Test Conditions
VCE = 10 Volts, IC = 200 mA,
f = 10 MHz
VCE = 5 Volts, IC = 50 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
225
120
Units
1.5
2.5
0.6
2.5
Volts
Max
Units
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Symbol
|hFE|
hFE
COBO
Typ
1.5
7.5
40
250
350
pF
50
500
1.5
500
ns
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Copyright 2002
Rev. F
td
tr
ts
tf
IC = 5 A, IB = 500 mA,
IC = 5 A, IB1=IB2 = 500 mA
µs
ns
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2