2N3019S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3019SJ) • JANTX level (2N3019SJX) • JANTXV level (2N3019SJV) • JANS level (2N3019SJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features • Radiation testing (total dose) upon request • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/391 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 140 Unit Volts Volts Emitter-Base Voltage VEBO 7 Volts IC 1 A 0.8 5.7 5.0 28.6 Collector Current, Continuous O Thermal Resistance RθJA 175 W mW/°C W mW/°C °C/W Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 °C Power Dissipation, TA = 25 C Derate linearly above 60OC Power Dissipation, TC = 25OC Derate linearly above 25OC Copyright 2002 Rev. F PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3019S Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 30 mA Typ Max Units Volts 80 Collector-Base Cutoff Current ICBO1 VCB = 140 Volts 10 µA Collector-Emitter Cutoff Current ICES1 VCE = 90 Volts 10 nA Collector-Emitter Cutoff Current ICES2 VCE = 90 Volts, TA = 150°C 10 µA Emitter-Base Cutoff Current IEBO1 VEB = 7 Volts 10 µA Emitter-Base Cutoff Current IEBO2 VEB = 5 Volts 10 nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat VCEsat1 VCEsat2 Test Conditions IC = 150 mA, VCE = 10 Volts IC = 0.1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 1 A, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 100 50 90 50 15 40 Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCB = 10 Volts, IE = 10 mA, f = 79.8 MHz VCE = 10 Volts, IC = 100 µA, f = 200 Hz, Rg = 1 kΩ Min Typ Max 300 200 Units 200 1.1 0.2 0.5 Volts Max Units Volts Small Signal Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Collector Base time constant rb’CC Noise Figure NF Typ 5 20 80 400 12 pF 60 pF 400 ps 4 dB 30 ns Switching Characteristics Saturated Turn-On Time Copyright 2002 Rev. F tON +tOFF Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2