INFRA-RED Item No.: 131244 1. This specification applies to GaAs / GaAs LED Chips with GaAlAs window - layer 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-GaAlAs 365 p-Epitaxy GaAs 120 n-Epitaxy GaAs 280 typ. n-Substrate GaAs 365 4. n-Electrode Electrical and optical characteristics (T=25°C) Parameter Symbol Forward voltage Reverse current Conditions IF = 20 mA IR = 5 V IF = 20 mA output Power * Φe IF = 50 mA Switching time tr, tf IF = 20 mA Peak wavelength IF = 20 mA λP Power measurement at OSA on gold plate 5. min VF IR typ max Unit 1,25 1,45 10 V µA 3,0 7,5 mW 500 950 ns nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]