INTEL E28F320J5A-120

5 Volt Intel StrataFlash® Memory
28F320J5 and 28F640J5 (x8/x16)
Datasheet
Product Features
■
■
■
■
■
High-Density Symmetrically-Blocked
Architecture
— 64 128-Kbyte Erase Blocks (64 M)
— 32 128-Kbyte Erase Blocks (32 M)
4.5 V–5.5 V VCC Operation
— 2.7 V–3.6 V and 4.5 V–5.5 V I/O
Capable
120 ns Read Access Time (32 M)
150 ns Read Access Time (64 M)
Enhanced Data Protection Features
— Absolute Protection with
VPEN = GND
— Flexible Block Locking
— Block Erase/Program Lockout during
Power Transitions
Industry-Standard Packaging
— SSOP Package (32, 64 M)
TSOP Package (32 M)
■
■
■
■
■
■
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
— Scalable Command Set
32-Byte Write Buffer
— 6 µs per Byte Effective Programming
Time
6,400,000 Total Erase Cycles (64 M)
3,200,000 Total Erase Cycles (32 M)
— 100,000 Erase Cycles per Block
Automation Suspend Options
— Block Erase Suspend to Read
— Block Erase Suspend to Program
System Performance Enhancements
— STS Status Output
Operating Temperature –20 °C to + 85 °C
(–40 °C to +85 °C on .25 micron ETOX VI)
process technology parts)
Capitalizing on two-bit-per-cell technology, 5 Volt Intel StrataFlash® memory products provide 2X the bits
in 1X the space. Offered in 64-Mbit (8-Mbyte) and 32-Mbit (4-Mbyte) densities, Intel StrataFlash memory
devices are the first to bring reliable, two-bit-per-cell storage technology to the flash market.
Intel StrataFlash memory benefits include: more density in less space, lowest cost-per-bit NOR devices,
support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, Intel StrataFlash
memory devices take advantage of 400 million units of manufacturing experience since 1988. As a result,
Intel StrataFlash components are ideal for code or data applications where high density and low cost are
required. Examples include networking, telecommunications, audio recording, and digital imaging.
Intel StrataFlash memory components deliver a new generation of forward-compatible software support.
By using the Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take
advantage of density upgrades and optimized write capabilities of future Intel StrataFlash memory devices.
Manufactured on Intel’s 0.4 micron ETOX™ V process technology and Intel’s 0.25 micron ETOX VI
process technology, 5 Volt Intel StrataFlash memory provides the highest levels of quality and reliability.
Notice: This document contains information on products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
Order Number: 290606-015
April 2002
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability
whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to
fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not
intended for use in medical, life saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
The 28F320J5 and 28F640J5 may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800548-4725 or by visiting Intel's website at http://www.intel.com.
Copyright © Intel Corporation 1997–2002.
*Other names and brands may be claimed as the property of others.
2
Datasheet
28F320J5 and 28F640J5
Contents
1.0
Product Overview .......................................................................................................7
2.0
Principles of Operation ..........................................................................................11
2.1
3.0
Bus Operation............................................................................................................12
3.1
3.2
3.3
3.4
3.5
3.6
3.7
4.0
4.3
4.4
4.5
4.6
4.7
4.8
4.9
4.10
4.11
4.12
5.5
5.6
5.7
Three-Line Output Control...................................................................................38
STS and Block Erase, Program, and Lock-Bit Configuration Polling ..................38
Power Supply Decoupling ...................................................................................38
Input Signal Transitions – Reducing Overshoots and Undershoots When Using
Buffers/Transceivers ...........................................................................................39
VCC, VPEN, RP# Transitions ................................................................................39
Power-Up/Down Protection .................................................................................39
Power Dissipation................................................................................................40
Electrical Specifications........................................................................................40
6.1
Datasheet
Read Array Command.........................................................................................18
Read Query Mode Command .............................................................................18
4.2.1 Query Structure Output ..........................................................................19
4.2.2 Query Structure Overview ......................................................................20
4.2.3 Block Status Register .............................................................................21
4.2.4 CFI Query Identification String ...............................................................21
4.2.5 System Interface Information .................................................................22
4.2.6 Device Geometry Definition....................................................................23
4.2.7 Primary-Vendor Specific Extended Query Table....................................23
Read Identifier Codes Command ........................................................................24
Read Status Register Command.........................................................................25
Clear Status Register Command.........................................................................25
Block Erase Command........................................................................................26
Block Erase Suspend Command ........................................................................26
Write to Buffer Command....................................................................................27
Byte/Word Program Commands .........................................................................27
Configuration Command .....................................................................................28
Set Block and Master Lock-Bit Commands.........................................................28
Clear Block Lock-Bits Command.........................................................................29
Design Considerations ..........................................................................................38
5.1
5.2
5.3
5.4
6.0
Read....................................................................................................................13
Output Disable.....................................................................................................13
Standby ...............................................................................................................13
Reset/Power-Down .............................................................................................13
Read Query .........................................................................................................14
Read Identifier Codes..........................................................................................14
Write ....................................................................................................................16
Command Definitions .............................................................................................17
4.1
4.2
5.0
Data Protection....................................................................................................11
Absolute Maximum Ratings.................................................................................40
3
28F320J5 and 28F640J5
6.2
6.3
6.4
6.5
6.6
6.7
Operating Conditions .......................................................................................... 40
Capacitance ........................................................................................................ 41
DC Characteristics .............................................................................................. 41
AC Characteristics—Read-Only Operations ....................................................... 44
AC Characteristics— Write Operations ............................................................... 46
Block Erase, Program, and Lock-Bit Configuration Performance ....................... 49
7.0
Ordering Information .............................................................................................. 50
8.0
Additional Information ........................................................................................... 51
4
Datasheet
28F320J5 and 28F640J5
Revision History
Date of
Revision
Datasheet
Version
Description
09/01/97
-001
Original version
09/17/97
-002
Modifications made to cover sheet
12/01/97
-003
VCC/GND Pins Converted to No Connects Specification Change added
ICCS, ICCD, ICCW and ICCE Specification Change added
Order Codes Specification Change added
01/31/98
-004
The µBGA* chip-scale package in Figure 2 was changed to a 52-ball package
and appropriate documentation added. The 64-Mb µBGA package dimensions
were changed in Figure 2. Changed Figure 4 to read SSOP instead of TSOP.
03/23/98
-005
32-Mbit Intel StrataFlash memory read access time added. The number of
block erase cycles was changed. The write buffer program time was changed.
The operating temperature was changed. A read parameter was added. Several program, erase, and lock-bit specifications were changed. Minor documentation changes were made as well. Datasheet designation changed from
Advance Information to Preliminary.
07/13/98
-006
Intel StrataFlash memory 32-Mbit µBGA package removed. tEHEL read specification reduced. Table 4 was modified. The Ordering Information was updated.
12/01/98
-007
Removed 32 Mbit, 100 ns references and ordering information for same. Provided clearer VOH specifications. Provided maximum program/erase specification. Added Input Signal Transitions—Reducing Overshoots and Undershoots
When Using Buffers/Transceivers to Design Considerations section.
Name of document changed from Intel® StrataFlash™ Memory Technology 32
and 64 Mbit.
05/04/99
-008
Updated CFI Tables, Section 4.2.1—Section 4.2.7.
09/16/99
-009
Operating Temperature Range Specification was increased to –20 °C to
+85° C. The 32-Mbit Read Access at +85 °C was changed (Section 6.5, AC
Characteristics-Read Only Operations).
10/20/99
-010
Modified Write Pulse Width definition
Added lock-bit default status (Section 4.11)
Added order code information for –20 °C to +85 °C
11/08/99
-011
Modified Chip Enable Truth Table
12/16/99
-012
Corrected error in command table
Removed erase queuing option from Figure 9, Block Erase Flowchart
06/26/00
-013
Add reference to 0.25 micron process on cover page
Corrected error in Table 10, Maximum buffer write time.
Updated section 6.7 program/erase times.
Corrected error in table 19 maximum temperature range
03/28/01
-014
Changed Clear Block-Lock Bit Time in Section 6.7.
04/23/02
-015
Added .25 micron ETOX VI process technology ordering information
Removed µBGA CSP information
5
28F320J5 and 28F640J5
6
Datasheet
28F320J5 and 28F640J5
1.0
Product Overview
The Intel StrataFlash® memory family contains high-density memories organized as 8 Mbytes or 4
Mwords (64-Mbit) and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or
16-bit words. The 64-Mbit device is organized as sixty-four 128-Kbyte (131,072 bytes) erase
blocks while the 32-Mbits device contains thirty-two 128-Kbyte erase blocks. Blocks are
selectively and individually lockable and unlockable in-system. See the memory map in Figure 4
on page 12.
A Common Flash Interface (CFI) permits software algorithms to be used for entire families of
devices. This allows device-independent, JEDEC ID-independent, and forward- and backwardcompatible software support for the specified flash device families. Flash vendors can standardize
their existing interfaces for long-term compatibility.
Scaleable Command Set (SCS) allows a single, simple software driver in all host systems to work
with all SCS-compliant flash memory devices, independent of system-level packaging (e.g.,
memory card, SIMM, or direct-to-board placement). Additionally, SCS provides the highest
system/device data transfer rates and minimizes device and system-level implementation costs.
A Command User Interface (CUI) serves as the interface between the system processor and
internal operation of the device. A valid command sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM) automatically executes the algorithms and
timings necessary for block erase, program, and lock-bit configuration operations.
A block erase operation erases one of the device’s 128-Kbyte blocks typically within one second—
independent of other blocks. Each block can be independently erased 100,000 times. Block erase
suspend mode allows system software to suspend block erase to read or program data from any
other block.
Each device incorporates a Write Buffer of 32 bytes (16 words) to allow optimum programming
performance. By using the Write Buffer, data is programmed in buffer increments. This feature can
improve system program performance by up to 20 times over non-Write Buffer writes.
Individual block locking uses a combination of bits, block lock-bits and a master lock-bit, to lock
and unlock blocks. Block lock-bits gate block erase and program operations while the master lockbit gates block lock-bit modification. Three lock-bit configuration operations set and clear lock-bits
(Set Block Lock-Bit, Set Master Lock-Bit, and Clear Block Lock-Bits commands).
The status register indicates when the WSM’s block erase, program, or lock-bit configuration
operation is finished.
The STS (STATUS) output gives an additional indicator of WSM activity by providing both a
hardware signal of status (versus software polling) and status masking (interrupt masking for
background block erase, for example). Status indication using STS minimizes both CPU overhead
and system power consumption. When configured in level mode (default mode), it acts as a RY/
BY# pin. When low, STS indicates that the WSM is performing a block erase, program, or lock-bit
configuration. STS-high indicates that the WSM is ready for a new command, block erase is
suspended (and programming is inactive), or the device is in reset/power-down mode.
Additionally, the configuration command allows the STS pin to be configured to pulse on
completion of programming and/or block erases.
Datasheet
7
28F320J5 and 28F640J5
Three CE pins are used to enable and disable the device. A unique CE logic design (see Table 2,
“Chip Enable Truth Table” on page 12) reduces decoder logic typically required for multi-chip
designs. External logic is not required when designing a single chip, a dual chip, or a 4-chip
miniature card or SIMM module.
The BYTE# pin allows either x8 or x16 read/writes to the device. BYTE# at logic low selects 8-bit
mode; address A0 selects between the low byte and high byte. BYTE# at logic high enables 16-bit
operation; address A1 becomes the lowest order address and address A0 is not used (don’t care). A
device block diagram is shown in Figure 1.
When the device is disabled (see Table 2 on page 12) and the RP# pin is at VCC, the standby mode
is enabled. When the RP# pin is at GND, a further power-down mode is enabled which minimizes
power consumption and provides write protection during reset. A reset time (tPHQV) is required
from RP# switching high until outputs are valid. Likewise, the device has a wake time (tPHWL)
from RP#-high until writes to the CUI are recognized. With RP# at GND, the WSM is reset and the
status register is cleared.
The Intel StrataFlash memory devices are available in several package types. The 64-Mbit is
available in 56-lead SSOP (Shrink Small Outline Package) and µBGA* package (micro Ball Grid
Array). The 32-Mbit is available in 56-lead TSOP (Thin Small Outline Package) and 56-lead
SSOP. Figures 2, 3, and 4 show the pinouts.
Figure 1. Intel StrataFlash® Memory Block Diagram
DQ0 - DQ15
VCCQ
Output Buffer
Input Buffer
Status
Register
Write Buffer
Identifier
Register
VCC
BYTE#
I/O Logic
Data
Register
Output
Multiplexer
Query
Command
User
Interface
CE
Logic
CE0
CE1
CE2
WE#
OE#
RP#
Multiplexer
Data
Comparator
32-Mbit: A0- A21
64-Mbit: A0 - A22
Y-Decoder
Y-Gating
Input Buffer
Address
Latch
STS
Write State
Machine
X-Decoder
32-Mbit: Thirty-two
64-Mbit: Sixty-four
128-Kbyte Blocks
Program/Erase
Voltage Switch
VPEN
VCC
GND
Address
Counter
8
Datasheet
28F320J5 and 28F640J5
Table 1.
Symbol
Lead Descriptions
Type
Name and Function
A0
INPUT
BYTE-SELECT ADDRESS: Selects between high and low byte when the device is in x8 mode.
This address is latched during a x8 program cycle. Not used in x16 mode (i.e., the A0 input buffer
is turned off when BYTE# is high).
A1–A22
INPUT
ADDRESS INPUTS: Inputs for addresses during read and program operations. Addresses are
internally latched during a program cycle.
32-Mbit: A0–A21
64-Mbit: A0–A22
DQ0–DQ7
INPUT/
OUTPUT
LOW-BYTE DATA BUS: Inputs data during buffer writes and programming, and inputs
commands during Command User Interface (CUI) writes. Outputs array, query, identifier, or status
data in the appropriate read mode. Floated when the chip is de-selected or the outputs are
disabled. Outputs DQ6–DQ0 are also floated when the Write State Machine (WSM) is busy. Check
SR.7 (status register bit 7) to determine WSM status.
DQ8–DQ15
INPUT/
OUTPUT
HIGH-BYTE DATA BUS: Inputs data during x16 buffer writes and programming operations.
Outputs array, query, or identifier data in the appropriate read mode; not used for status register
reads. Floated when the chip is de-selected, the outputs are disabled, or the WSM is busy.
CE0,
CE1,
CE2
INPUT
CHIP ENABLES: Activates the device’s control logic, input buffers, decoders, and sense
amplifiers. When the device is de-selected (see Table 2 on page 12, power reduces to standby
levels.
All timing specifications are the same for these three signals. Device selection occurs with the first
edge of CE0, CE1, or CE2 that enables the device. Device deselection occurs with the first edge of
CE0, CE1, or CE2 that disables the device (see Table 2).
RESET/ POWER-DOWN: Resets internal automation and puts the device in power-down mode.
RP#-high enables normal operation. Exit from reset sets the device to read array mode. When
driven low, RP# inhibits write operations which provides data protection during power transitions.
RP#
INPUT
OE#
INPUT
OUTPUT ENABLE: Activates the device’s outputs through the data buffers during a read cycle.
OE# is active low.
WE#
INPUT
WRITE ENABLE: Controls writes to the Command User Interface, the Write Buffer, and array
blocks. WE# is active low. Addresses and data are latched on the rising edge of the WE# pulse.
STS
OPEN
DRAIN
OUTPUT
STATUS: Indicates the status of the internal state machine. When configured in level mode
(default mode), it acts as a RY/BY# pin. When configured in one of its pulse modes, it can pulse to
indicate program and/or erase completion. For alternate configurations of the STATUS pin, see
the Configurations command. Tie STS to VCCQ with a pull-up resistor.
BYTE#
INPUT
BYTE ENABLE: BYTE# low places the device in x8 mode. All data is then input or output on
DQ0–DQ7, while DQ8–DQ15 float. Address A0 selects between the high and low byte. BYTE# high
places the device in x16 mode, and turns off the A0 input buffer. Address A1 then becomes the
lowest order address.
VPEN
INPUT
VCC
SUPPLY
DEVICE POWER SUPPLY: With VCC ≤ VLKO, all write attempts to the flash memory are inhibited.
VCCQ
OUTPUT
BUFFER
SUPPLY
OUTPUT BUFFER POWER SUPPLY: This voltage controls the device’s output voltages. To
obtain output voltages compatible with system data bus voltages, connect VCCQ to the system
supply voltage.
GND
SUPPLY
GROUND: Do not float any ground pins.
NC
Datasheet
RP# at VHH enables master lock-bit setting and block lock-bits configuration when the master
lock-bit is set. RP# = VHH overrides block lock-bits thereby enabling block erase and
programming operations to locked memory blocks. Do not permanently connect RP# to VHH.
ERASE / PROGRAM / BLOCK LOCK ENABLE: For erasing array blocks, programming data, or
configuring lock-bits.
With VPEN ≤ VPENLK, memory contents cannot be altered.
NO CONNECT: Lead is not internally connected; it may be driven or floated.
9
28F320J5 and 28F640J5
Figure 2. TSOP Lead Configuration (32 Mbit)
28F160S5 28F016SV 28F032SA 28F320J5
28F016SA
3/5#
CE1
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
NC
CE1
NC
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
3/5#
CE1
CE2
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPP
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
NC
CE1
A21
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPEN
RP#
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
28F320J5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
Intel StrataFlash ® Memory
56-Lead TSOP
Standard Pinout
14 mm x 20 mm
Top View
NC
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCCQ
GND
DQ11
DQ3
DQ10
DQ2
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
CE2
28F032SA 28F016SV 28F160S5
28F016SA
WP#
WE#
OE#
RY/BY#
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCC
GND
DQ11
DQ3
DQ10
DQ2
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
WP#
WE#
OE#
RY/BY#
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCC
GND
DQ11
DQ3
DQ10
DQ2
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
WP#
WE#
OE#
STS
DQ15
DQ7
DQ14
DQ6
GND
DQ13
DQ5
DQ12
DQ4
VCC
GND
DQ11
DQ3
DQ10
DQ2
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
Highlights pinout changes
NOTES:
1. VCC (Pin 37) and GND (Pin 48) are not internally connected. For future device revisions, it is recommended
that these pins be connected to their respected power supplies (i.e., Pin 37 = VCC and Pin 48 = GND).
2. For compatibility with future generations of Intel StrataFlash® memory, this NC (pin 56) should be connected
to GND.
Figure 3. SSOP Lead Configuration (64 Mbit and 32 Mbit)
28F016SA 28F160S5 28F320S5
28F016SV
CE0#
A12
A13
A14
A15
3/5#
CE1#
NC
A20
A19
A18
A17
A16
VCC
GND
DQ6
DQ14
DQ7
DQ15
RY/BY#
OE#
WE#
WP#
DQ13
DQ5
DQ12
DQ4
VCC
CE0#
A12
A13
A14
A15
NC
CE1#
NC
A20
A19
A18
A17
A16
VCC
GND
DQ6
DQ14
DQ7
DQ15
RY/BY#
OE#
WE#
WP#
DQ13
DQ5
DQ12
DQ4
VCC
28F640J5
CE0#
A12
A13
A14
A15
NC
CE1#
A21
A20
A19
A18
A17
A16
VCC
GND
DQ6
DQ14
DQ7
DQ15
RY/BY#
OE#
WE#
WP#
DQ13
DQ5
DQ12
DQ4
VCC
CE0
A12
A13
A14
A15
A22
CE1
A21
A20
A19
A18
A17
A16
VCC
GND
DQ6
DQ14
DQ7
DQ15
STS
OE#
WE#
NC
DQ13
DQ5
DQ12
DQ4
VCCQ
28F320J5
CE0
A12
A13
A14
A15
NC
CE1
A21
A20
A19
A18
A17
A16
VCC
GND
DQ6
DQ14
DQ7
DQ15
STS
OE#
WE#
NC
DQ13
DQ5
DQ12
DQ4
VCCQ
28F320J5
1
2
3
4
5
6
7
8
9
10
Intel
11
®
12 StrataFlash Memory
56-Lead
SSOP
13
Standard Pinout
14
15
16 mm x 23.7 mm
16
17
Top View
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
VPEN
RP#
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
CE2
DQ2
DQ10
DQ3
DQ11
GND
28F640J5 28F320S5 28F160S5 28F016SA
28F016SV
VPEN
RP#
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
CE2
DQ2
DQ10
DQ3
DQ11
GND
VPP
RP#
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
DQ2
DQ10
DQ3
DQ11
GND
VPP
RP#
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
DQ2
DQ10
DQ3
DQ11
GND
VPP
RP#
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
VCC
DQ9
DQ1
DQ8
DQ0
A0
BYTE#
NC
NC
DQ2
DQ10
DQ3
DQ11
GND
Highlights pinout changes.
NOTES:
1. VCC (Pin 42) and GND (Pin 15) are not internally connected. For future device revisions, it is recommended
that these pins be connected to their respected power supplies (i.e., Pin 42 = VCC and Pin 15 = GND).
2. For compatibility with future generations of Intel StrataFlash® memory, this NC (pin 23) should be connected
to GND.
10
Datasheet
28F320J5 and 28F640J5
2.0
Principles of Operation
The Intel StrataFlash memory devices include an on-chip WSM to manage block erase, program,
and lock-bit configuration functions. It allows for 100% TTL-level control inputs, fixed power
supplies during block erasure, program, lock-bit configuration, and minimal processor overhead
with RAM-like interface timings.
After initial device power-up or return from reset/power-down mode (see Bus Operations), the
device defaults to read array mode. Manipulation of external memory control pins allows array
read, standby, and output disable operations.
Read array, status register, query, and identifier codes can be accessed through the CUI (Command
User Interface) independent of the VPEN voltage. VPENH on VPEN enables successful block
erasure, programming, and lock-bit configuration. All functions associated with altering memory
contents—block erase, program, lock-bit configuration—are accessed via the CUI and verified
through the status register.
Commands are written using standard micro-processor write timings. The CUI contents serve as
input to the WSM, which controls the block erase, program, and lock-bit configuration. The
internal algorithms are regulated by the WSM, including pulse repetition, internal verification, and
margining of data. Addresses and data are internally latched during program cycles.
Interface software that initiates and polls progress of block erase, program, and lock-bit
configuration can be stored in any block. This code is copied to and executed from system RAM
during flash memory updates. After successful completion, reads are again possible via the Read
Array command. Block erase suspend allows system software to suspend a block erase to read or
program data from/to any other block.
2.1
Data Protection
Depending on the application, the system designer may choose to make the VPEN switchable
(available only when memory block erases, programs, or lock-bit configurations are required) or
hardwired to VPENH. The device accommodates either design practice and encourages
optimization of the processor-memory interface.
When VPEN ≤ VPENLK, memory contents cannot be altered. The CUI’s two-step block erase, byte/
word program, and lock-bit configuration command sequences provide protection from unwanted
operations even when VPENH is applied to VPEN. All program functions are disabled when VCC is
below the write lockout voltage VLKO or when RP# is VIL. The device’s block locking capability
provides additional protection from inadvertent code or data alteration by gating erase and program
operations.
Datasheet
11
28F320J5 and 28F640J5
3.0
Bus Operation
The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash
memory conform to standard microprocessor bus cycles.
Figure 4. Memory Map
A [22-0]: 64-Mbit
A [21-0]: 32-Mbit
A [22-1]: 64-Mbit
A [21-1]: 32-Mbit
7FFFFF
3FFFFF
128-Kbyte Block
63
3FFFFF
63
64-Kword Block
31
64-Kword Block
1
64-Kword Block
0
1FFFFF
128-Kbyte Block
31
1F0000
03FFFF
32-Mbit
3E0000
01FFFF
128-Kbyte Block
1
020000
01FFFF
010000
00FFFF
128-Kbyte Block
0
000000
000000
Byte-Wide (x8) Mode
Table 2.
64-Kword Block
3F0000
64-Mbit
7E0000
Word Wide (x16) Mode
Chip Enable Truth Table
CE2
CE1
CE0
DEVICE
VIL
VIL
VIL
Enabled
VIL
VIL
VIH
Disabled
VIL
VIH
VIL
Disabled
VIL
VIH
VIH
Disabled
VIH
VIL
VIL
Enabled
VIH
VIL
VIH
Enabled
VIH
VIH
VIL
Enabled
VIH
VIH
VIH
Disabled
NOTES:
1. See Application Note, AP-647 5 Volt Intel StrataFlash® Memory Design Guide for typical CE configurations.
2. For single-chip applications CE2 and CE1 can be strapped to GND.
12
Datasheet
28F320J5 and 28F640J5
3.1
Read
Information can be read from any block, query, identifier codes, or status register independent of
the VPEN voltage. RP# can be at either VIH or VHH.
Upon initial device power-up or after exit from reset/power-down mode, the device automatically
resets to read array mode. Otherwise, write the appropriate read mode command (Read Array, Read
Query, Read Identifier Codes, or Read Status Register) to the CUI. Six control pins dictate the data
flow in and out of the component: CE0, CE1, CE2, OE#, WE#, and RP#. The device must be
enabled (see Table 2), and OE# must be driven active to obtain data at the outputs. CE0, CE1, and
CE2 are the device selection controls and, when enabled (see Table 2), select the memory device.
OE# is the data output (DQ0–DQ15) control and, when active, drives the selected memory data
onto the I/O bus. WE# must be at VIH.
3.2
Output Disable
With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins DQ0–DQ15 are
placed in a high-impedance state.
3.3
Standby
CE0, CE1, and CE2 can disable the device (see Table 2) and place it in standby mode which
substantially reduces device power consumption. DQ0–DQ15 outputs are placed in a highimpedance state independent of OE#. If deselected during block erase, program, or lock-bit
configuration, the WSM continues functioning, and consuming active power until the operation
completes.
3.4
Reset/Power-Down
RP# at VIL initiates the reset/power-down mode.
In read modes, RP#-low deselects the memory, places output drivers in a high-impedance state, and
turns off numerous internal circuits. RP# must be held low for a minimum of tPLPH. Time tPHQV is
required after return from reset mode until initial memory access outputs are valid. After this wakeup interval, normal operation is restored. The CUI is reset to read array mode and status register is
set to 80H.
During block erase, program, or lock-bit configuration modes, RP#-low will abort the operation. In
default mode, STS transitions low and remains low for a maximum time of tPLPH + tPHRH until the
reset operation is complete. Memory contents being altered are no longer valid; the data may be
partially corrupted after a program or partially altered after an erase or lock-bit configuration. Time
tPHWL is required after RP# goes to logic-high (VIH) before another command can be written.
As with any automated device, it is important to assert RP# during system reset. When the system
comes out of reset, it expects to read from the flash memory. Automated flash memories provide
status information when accessed during block erase, program, or lock-bit configuration modes. If
a CPU reset occurs with no flash memory reset, proper initialization may not occur because the
Datasheet
13
28F320J5 and 28F640J5
flash memory may be providing status information instead of array data. Intel® Flash memories
allow proper initialization following a system reset through the use of the RP# input. In this
application, RP# is controlled by the same RESET# signal that resets the system CPU.
3.5
Read Query
The read query operation outputs block status information, CFI (Common Flash Interface) ID
string, system interface information, device geometry information, and Intel-specific extended
query information.
3.6
Read Identifier Codes
The read identifier codes operation outputs the manufacturer code, device code, block lock
configuration codes for each block, and the master lock configuration code (see Figure 5). Using
the manufacturer and device codes, the system CPU can automatically match the device with its
proper algorithms. The block lock and master lock configuration codes identify locked and
unlocked blocks and master lock-bit setting.
14
Datasheet
28F320J5 and 28F640J5
Figure 5. Device Identifier Code Memory Map
Word
Address
3FFFFF
A[22-1]: 64 Mbit
A[21-1]: 32 Mbit
Block 63
Reserved for Future
Implementation
3F0003
3F0002
3F0000
3EFFFF
Block 63 Lock Configuration
Reserved for Future
Implementation
(Blocks 32 through 62)
Block 31
Reserved for Future
Implementation
1EFFFF
01FFFF
Reserved for Future
Implementation
(Blocks 2 through 30)
Block 1
Reserved for Future
Implementation
010003
010002
010000
00FFFF
64 Mbit
1F0000
Block 31 Lock Configuration
32 Mbit
1F0003
1F0002
Block 1 Lock Configuration
Reserved for Future
Implementation
Block 0
Reserved for Future
Implementation
000004
000003
000002
000001
000000
Master Lock Configuration
Block 0 Lock Configuration
Device Code
Manufacturer Code
NOTE: A0 is not used in either x8 or x16 modes when obtaining these identifier codes. Data is always given on
the low byte in x16 mode (upper byte contains 00h).
Datasheet
15
28F320J5 and 28F640J5
3.7
Write
Writing commands to the CUI enables reading of device data, query, identifier codes, inspection
and clearing of the status register, and, when VPEN = VPENH, block erasure, program, and lock-bit
configuration.
The Block Erase command requires appropriate command data and an address within the block to
be erased. The Byte/Word Program command requires the command and address of the location to
be written. Set Master and Block Lock-Bit commands require the command and address within the
device (Master Lock) or block within the device (Block Lock) to be locked. The Clear Block LockBits command requires the command and address within the device.
The CUI does not occupy an addressable memory location. It is written when the device is enabled
and WE# is active. The address and data needed to execute a command are latched on the rising
edge of WE# or the first edge of CE0, CE1, or CE2 that disables the device (see Table 2 on
page 12). Standard microprocessor write timings are used.
Table 3.
Bus Operations
Mode
Notes
RP#
CE0,1,2(1)
OE#(2)
WE#(2)
Address
VPEN
DQ(3)
STS
(default
mode)
Read Array
4,5,6
VIH or VHH
Enabled
VIL
VIH
X
X
DOUT
High Z(7)
Output Disable
VIH or VHH
Enabled
VIH
VIH
X
X
High Z
X
Standby
VIH or VHH
Disabled
X
X
X
X
High Z
X
Reset/PowerDown Mode
VIL
X
X
X
X
X
High Z
High Z(7)
Read Identifier
Codes
VIH or VHH
Enabled
VIL
VIH
See
Figure 5
X
Note 8
High Z(7)
Read Query
VIH or VHH
Enabled
VIL
VIH
See
Table 7
X
Note 9
High Z(7)
Read Status
(WSM off)
VIH or VHH
Enabled
VIL
VIH
X
X
DOUT
Read Status
(WSM on)
VIH or VHH
Enabled
VIL
VIH
X
VPENH
DQ7 = DOUT
DQ15–8 = High Z
DQ6–0 = High Z
VIH or VHH
Enabled
VIH
VIL
X
X
DIN
Write
6,10,11
X
NOTES:
1. See Table 2 for valid CE configurations.
2. OE# and WE# should never be enabled simultaneously.
3. DQ refers to DQ0–DQ7 if BYTE# is low and DQ0–DQ15 if BYTE# is high.
4. Refer to DC Characteristics. When VPEN ≤ VPENLK, memory contents can be read, but not altered.
5. X can be VIL or VIH for control and address pins, and VPENLK or VPENH for VPEN. See DC Characteristics for
VPENLK and VPENH voltages.
6. In default mode, STS is VOL when the WSM is executing internal block erase, program, or lock-bit
configuration algorithms. It is VOH when the WSM is not busy, in block erase suspend mode (with
programming inactive), or reset/power-down mode.
7. High Z will be VOH with an external pull-up resistor.
8. See Read Identifier Codes Command section for read identifier code data.
9. See Read Query Mode Command section for read query data.
10.Command writes involving block erase, program, or lock-bit configuration are reliably executed when VPEN =
VPENH and VCC is within specification. Block erase, program, or lock-bit configuration with VIH < RP# < VHH
produce spurious results and should not be attempted.
11.Refer to Table 4 for valid DIN during a write operation.
16
Datasheet
28F320J5 and 28F640J5
4.0
Command Definitions
When the VPEN voltage ≤ VPENLK, only read operations from the status register, query, identifier
codes, or blocks are enabled. Placing VPENH on VPEN additionally enables block erase, program,
and lock-bit configuration operations.
Device operations are selected by writing specific commands into the CUI. Table 4 defines these
commands.
Table 4.
Command
Intel StrataFlash® Memory Command Set Definitions(1,2)
Scaleable
or Basic
Command
Set(2)
Bus
Cycles
Req’d.
Notes
First Bus Cycle
Second Bus Cycle
Oper(3)
Addr(4)
Data(5,6)
Oper(3)
Addr(4)
Data(5,6)
Write
X
FFH
Write
X
90H
Read
IA
ID
Write
X
98H
Read
QA
QD
Write
X
70H
Read
X
SRD
Write
X
50H
Read Array
SCS/BCS
1
Read Identifier
Codes
SCS/BCS
≥2
Read Query
SCS
≥2
Read Status
Register
SCS/BCS
2
Clear Status
Register
SCS/BCS
1
Write to Buffer
SCS/BCS
>2
9, 10,
11
Write
BA
E8H
Write
BA
N
Word/Byte
Program
SCS/BCS
2
12,13
Write
X
40H
or
10H
Write
PA
PD
Block Erase
SCS/BCS
2
11,12
Write
X
20H
Write
BA
D0H
Block Erase,
Program
Suspend
SCS/BCS
1
12,14
Write
X
B0H
Block Erase,
Program
Resume
SCS/BCS
1
12
Write
X
D0H
Configuration
SCS
2
Write
X
B8H
Write
X
CC
2
Write
X
60H
Write
RCD
03H
Write
X
60H
Write
BA
01H
Write
X
60H
Write
X
D0H
Write
X
C0H
Write
PA
PD
Set Read
Configuration
Set Block LockBit
SCS
2
Clear Block
Lock-Bits
SCS
2
Protection
Program
2
7
8
15
NOTES:
1. Commands other than those shown above are reserved by Intel for future device implementations and
should not be used.
2. If the WSM is running, only DQ7 is valid; DQ15–DQ8 and DQ6–DQ0 float, which places them in a highimpedance state.
Datasheet
17
28F320J5 and 28F640J5
3. The Basic Command Set (BCS) is the same as the 28F008SA Command Set or Intel Standard Command
Set. The Scaleable Command Set (SCS) is also referred to as the Intel Extended Command Set.
4. Bus operations are defined in Table 3.
5. X = Any valid address within the device.
BA = Address within the block.
IA = Identifier Code Address: see Figure 5 and Table 13.
QA = Query database Address.
PA = Address of memory location to be programmed.
6. ID = Data read from Identifier Codes.
QD = Data read from Query database.
SRD = Data read from status register. See Table 16 for a description of the status register bits.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE#.
CC = Configuration Code.
7. The upper byte of the data bus (DQ8–DQ15) during command writes is a “Don’t Care” in x16 operation.
8. Following the Read Identifier Codes command, read operations access manufacturer, device, block lock, and
master lock codes. See Read Identifier Codes Command section for read identifier code data.
9. After the Write to Buffer command is issued check the XSR to make sure a buffer is available for writing.
10.The number of bytes/words to be written to the Write Buffer = N + 1, where N = byte/word count argument.
Count ranges on this device for byte mode are N = 00H to N = 1FH and for word mode are N = 0000H to N =
000FH. The third and consecutive bus cycles, as determined by N, are for writing data into the Write Buffer.
The Confirm command (D0H) is expected after exactly N + 1 write cycles; any other command at that point in
the sequence aborts the write to buffer operation. Please see Figure 6, “Write to Buffer Flowchart” on
page 32, for additional information.
11.Programming the write buffer to flash or initiating the erase operation does not begin until a confirm
command (D0h) is issued.
12.If the block is locked, RP# must be at VHH to enable block erase or program operations. Attempts to issue a
block erase or program to a locked block while RP# is VIH will fail.
13.Either 40H or 10H are recognized by the WSM as the byte/word program setup.
14.If the master lock-bit is set, RP# must be at VHH to set a block lock-bit. RP# must be at VHH to set the master
lock-bit. If the master lock-bit is not set, a block lock-bit can be set while RP# is VIH.
15.If the master lock-bit is set, RP# must be at VHH to clear block lock-bits. The clear block lock-bits operation
simultaneously clears all block lock-bits. If the master lock-bit is not set, the Clear Block Lock-Bits command
can be done while RP# is VIH.
4.1
Read Array Command
Upon initial device power-up and after exit from reset/power-down mode, the device defaults to
read array mode. This operation is also initiated by writing the Read Array command. The device
remains enabled for reads until another command is written. Once the internal WSM has started a
block erase, program, or lock-bit configuration, the device will not recognize the Read Array
command until the WSM completes its operation unless the WSM is suspended via an Erase
Suspend command. The Read Array command functions independently of the VPEN voltage and
RP# can be VIH or VHH.
4.2
Read Query Mode Command
This section defines the data structure or “database” returned by the Common Flash Interface (CFI)
Query command. System software should parse this structure to gain critical information such as
block size, density, x8/x16, and electrical specifications. Once this information has been obtained,
the software will know which command sets to use to enable flash writes, block erases, and
otherwise control the flash component. The Query is part of an overall specification for multiple
command set and control interface descriptions called Common Flash Interface, or CFI.
18
Datasheet
28F320J5 and 28F640J5
4.2.1
Query Structure Output
The Query “database” allows system software to gain information for controlling the flash
component. This section describes the device’s CFI-compliant interface that allows the host system
to access Query data.
Query data are always presented on the lowest-order data outputs (DQ0–DQ7) only. The numerical
offset value is the address relative to the maximum bus width supported by the device. On this
family of devices, the Query table device starting address is a 10h, which is a word address for x16
devices.
For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and “R” in ASCII,
appear on the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00H
data on upper bytes. Thus, the device outputs ASCII “Q” in the low byte (DQ0–DQ7) and 00h in
the high byte (DQ8–DQ15).
At Query addresses containing two or more bytes of information, the least significant data byte is
presented at the lower address, and the most significant data byte is presented at the higher address.
In all of the following tables, addresses and data are represented in hexadecimal notation, so the
“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always
“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is
shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.
Table 5.
Summary of Query Structure Output as a Function of Device and Mode
Device
Type/
Mode
x16 device
x16 mode
x16 device
x8 mode
Query start location in
maximum device bus
width addresses
10h
N/A(1)
Query data with maximum
device bus width addressing
Query data with byte
addressing
Hex
Offset
Hex
Code
ASCII
Value
Hex
Offset
Hex
Code
ASCII
Value
10:
11:
12:
0051
0052
0059
“Q”
“R”
“Y”
20:
21:
22:
20:
21:
22:
51
00
52
51
51
52
“Q”
“Null”
“R”
“Q”
“Q”
“R”
N/A(1
NOTE:
1. The system must drive the lowest order addresses to access all the device's array data when the device is
configured in x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the
system, is "Not Applicable" for x8-configured devices.
Datasheet
19
28F320J5 and 28F640J5
Table 6.
Example of Query Structure Output of a x16- and x8-Capable Device
Word Addressing
Offset
Hex Code
A15–A0
Value
D15–D0
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
...
4.2.2
Byte Addressing
0051
0052
0059
P_IDLO
P_IDHI
PLO
PHI
A_IDLO
A_IDHI
...
Offset
Hex Code
A7–A0
“Q”
“R”
“Y”
PrVendor
ID #
PrVendor
TblAdr
AltVendor
ID #
...
Value
D7–D0
20h
21h
22h
23h
24h
25h
26h
27h
28h
...
51
51
52
52
59
59
P_IDLO
P_IDLO
P_IDHI
...
“Q”
“Q”
“R”
“R”
“Y”
“Y”
PrVendor
ID #
ID #
...
Query Structure Overview
The Query command causes the flash component to display the Common Flash Interface (CFI)
Query structure or “database.” See AP-646 Common Flash Interface (CFI) and Command Sets
(order number 292204) for a full description of CFI.
The following sections describe the Query structure sub-sections in detail.
Table 7.
Query Structure(1)
Offset
Sub-Section Name
Description
00h
Manufacturer Code
01h
Device Code
(BA+2)h(2)
04-0Fh
Block Status Register
Block-Specific Information
Reserved
Reserved for Vendor-Specific Information
10h
CFI Query Identification String
Reserved for Vendor-Specific Information
1Bh
System Interface Information
Command Set ID and Vendor Data Offset
27h
Device Geometry Definition
Flash Device Layout
Primary Intel-Specific
Extended Query Table
Vendor-Defined Additional Information Specific to the Primary
Vendor Algorithm
(3)
P
NOTES:
1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a
function of device bus width and mode.
2. BA = Block Address beginning location (i.e., 02000h is block 2’s beginning location when the block size is
128 Kbyte).
3. Offset 15 defines “P” which points to the Primary Intel-Specific Extended Query Table.
20
Datasheet
28F320J5 and 28F640J5
4.2.3
Block Status Register
The Block Status Register indicates whether an erase operation completed successfully or whether
a given block is locked or can be accessed for flash program/erase operations.
Block Erase Status (BSR.1) allows system software to determine the success of the last block erase
operation. BSR.1 can be used just after power-up to verify that the VCC supply was not
accidentally removed during an erase operation. This bit is only reset by issuing another erase
operation to the block. The Block Status Register is accessed from word address 02h within each
block.
Table 8.
Block Status Register
Offset
Length
(BA+2)h(1)
1
Address
Value
Block Lock Status Register
Description
BA+2:
--00 or --01
BSR.0 Block Lock Status
0 = Unlocked
1 = Locked
BA+2:
(bit 0): 0 or 1
BSR.1 Block Erase Status
0 = Last erase operation completed successfully
1 = Last erase operation did not complete successfully
BA+2:
(bit 1): 0 or 1
BSR 2–7: Reserved for Future Use
BA+2:
(bit 2–7): 0
NOTE:
1. BA = The beginning location of a Block Address (i.e., 008000h is block 1’s (64-KB block) beginning location
in word mode).
4.2.4
CFI Query Identification String
The Identification String provides verification that the component supports the Common Flash
Interface specification. It also indicates the specification version and supported vendor-specified
command set(s).
Table 9.
Datasheet
CFI Identification
Offset
Length
Description
10h
3
Query-unique ASCII string “QRY”
13h
2
15h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specified algorithms
Extended Query Table primary algorithm address
17h
2
19h
2
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
Add.
Hex
Code
10
11:
12:
13:
14:
15:
16:
17:
18:
19:
1A:
--51
--52
--59
--01
--00
--31
--00
--00
--00
--00
--00
Value
“Q”
“R”
“Y”
21
28F320J5 and 28F640J5
4.2.5
System Interface Information
The following device information can optimize system interface software.
Table 10. System Interface Information
Add.
Hex
Code
Value
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1B:
--45
4.5 V
1
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
1C:
--55
5.5 V
1Dh
1
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1D:
--00
0.0 V
1Eh
1
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
1E:
--00
0.0 V
1Fh
1
“n” such that typical single word program time-out = 2n µs
1F:
--07
128 µs
20h
1
“n” such that typical max. buffer write time-out = 2n µs
20:
--07
128 µs
21h
1
“n” such that typical block erase time-out = 2n ms
21:
--0A
1s
Offset
Length
1Bh
1
1Ch
22h
22
Description
n
1
“n” such that typical full chip erase time-out = 2 ms
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2n times
typical
23:
--04
2 ms
24h
1
“n” such that maximum buffer write time-out = 2n times typical
24:
--04
2 ms
n
25h
1
“n” such that maximum block erase time-out = 2 times typical
25:
--04
16 s
26h
1
“n” such that maximum chip erase time-out = 2n times typical
26:
--00
NA
Datasheet
28F320J5 and 28F640J5
4.2.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
Table 11. Device Geometry Definition
Code See Table
Below
Offset
Length
27h
1
“n” such that device size = 2n in number of bytes
27:
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
28:00,29:00 28:01,29:00 28:02,29:00
29:
--00
2A:
--05
2B:
--00
2C:
--01
2Ah
2
Description
“n” such that maximum number of bytes in write buffer = 2
n
2Ch
1
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or
more contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
2Dh
4
Erase Block Region 1 Information
2D:
bits 0–15 = y, y+1 = number of identical-size erase blocks
2E:
bits 16–31 = z, region erase block(s) size are z x 256 bytes
2F:
x8/
x16
32
1
30:
Table 12. Device Geometry Definition
4.2.7
Address
32 Mbit
64 Mbit
128 Mbit
(Info Only
27:
28:
29:
2A:
2B:
2C:
2D:
2E:
2F:
30:
--16
--02
--00
--05
--00
--01
--1F
--00
--00
--02
--17
--02
--00
--05
--00
--01
--3F
--00
--00
--02
--18
--02
--00
--05
--00
--01
--7F
--00
--00
--02
Primary-Vendor Specific Extended Query Table
Certain flash features and commands are optional. The Primary Vendor-Specific Extended Query
table specifies this and other similar information.
Datasheet
23
28F320J5 and 28F640J5
Table 13. Primary Vendor-Specific Extended Query
Offset(1)
P = 31h
Length
Description
(Optional Flash Features and Commands)
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
(P+5)h
(P+6)h
(P+7)h
(P+8)h
3
Primary extended query table
Unique ASCII string “PRI”
1
1
4
(P+9)h
1
(P+A)h
(P+B)h
2
(P+C)h
1
(P+D)h
1
Major version number, ASCII
Minor version number, ASCII
Optional feature and command support (1=yes, 0=no)
bits 9–31 are reserved; undefined bits are “0.” If bit 31 is
“1” then another 31 bit field of optional features follows at
the end of the bit-30 field.
bit 0 Chip erase supported
bit 1 Suspend erase supported
bit 2 Suspend program supported
bit 3 Legacy lock/unlock supported
bit 4 Queued erase supported
Supported functions after suspend: read Array, Status,
Query
Other supported operations are:
bits 1–7 reserved; undefined bits are “0”
bit 0 Program supported after erase suspend
Block status register mask
bits 2–15 are Reserved; undefined bits are “0”
bit 0 Block Lock-Bit Status register active
bit 1 Block Lock-Down Bit Status active
VCC logic supply highest performance program/erase
voltage
bits 0–3 BCD value in 100 mV
bits 4–7 BCD value in volts
VPP optimum program/erase supply voltage
bits 0–3 BCD value in 100 mV
bits 4–7 HEX value in volts
Reserved for Future Use
(P+E)h
Add.
Hex
Code
31:
32:
33:
34:
35:
36:
37:
38:
39:
bit 0 = 0
bit 1 = 1
bit 2 = 0
bit 3 = 1
bit 4 = 0
--50
--52
--49
--31
--31
--0A
--00
--00
--00
No
Yes
No
Yes
No
3A:
--01
bit 0 = 1
3B:
3C:
bit 0 = 1
bit 1 = 0
Yes
--01
--00
Yes
No
3D:
--50
5.0 V
3E:
--00
0.0 V
Value
“P”
“R”
“I”
“1”
“1”
3F:
NOTE:
1. The variable P is a pointer which is defined at CFI offset 15h.
4.3
Read Identifier Codes Command
The identifier code operation is initiated by writing the Read Identifier Codes command. Following
the command write, read cycles from addresses shown in Figure 5 retrieve the manufacturer,
device, block lock configuration and master lock configuration codes (see Table 13 for identifier
code values). To terminate the operation, write another valid command. Like the Read Array
command, the Read Identifier Codes command functions independently of the VPEN voltage and
RP# can be VIH or VHH. This command is valid only when the WSM is off or the device is
suspended. Following the Read Identifier Codes command, the following information can be read:
24
Datasheet
28F320J5 and 28F640J5
Table 14. Identifier Codes
Code
Manufacture Code
Device Code
32-Mbit
64-Mbit
Block Lock Configuration
Address(1)
Data
00000
(00) 89
00001
(00) 14
00001
(00) 15
X0002(2)
• Block Is Unlocked
DQ0 = 0
• Block Is Locked
DQ0 = 1
• Reserved for Future Use
Master Lock Configuration
DQ1–7
00003
• Device Is Unlocked
DQ0 = 0
• Device Is Locked
DQ0 = 1
• Reserved for Future Use
DQ1–7
NOTES:
1. A0 is not used in either x8 or x16 modes when obtaining the identifier codes. The lowest order address line is
A1. Data is always presented on the low byte in x16 mode (upper byte contains 00h).
2. X selects the specific block’s lock configuration code. See Figure 5 for the device identifier code memory
map.
4.4
Read Status Register Command
The status register may be read to determine when a block erase, program, or lock-bit configuration
is complete and whether the operation completed successfully. It may be read at any time by
writing the Read Status Register command. After writing this command, all subsequent read
operations output data from the status register until another valid command is written. The status
register contents are latched on the falling edge of OE# or the first edge of CE0, CE1, or CE2 that
enables the device (see Table 2). OE# must toggle to VIH or the device must be disabled (Table 2)
before further reads to update the status register latch. The Read Status Register command
functions independently of the VPEN voltage. RP# can be VIH or VHH.
During a program, block erase, set lock-bit, or clear lock-bit command sequence, only SR.7 is valid
until the WSM completes or suspends the operation. Device I/O pins DQ0–DQ6 and DQ8–DQ15
are placed in a high-impedance state. When the operation completes or suspends (check status
register bit 7), all contents of the status register are valid when read.
4.5
Clear Status Register Command
Status register bits SR.5, SR.4, SR.3, and SR.1 are set to “1”s by the WSM and can only be reset by
the Clear Status Register command. These bits indicate various failure conditions (see Table 16).
By allowing system software to reset these bits, several operations (such as cumulatively erasing or
locking multiple blocks or writing several bytes in sequence) may be performed. The status register
may be polled to determine if an error occurred during the sequence.
To clear the status register, the Clear Status Register command (50H) is written. It functions
independently of the applied VPEN voltage. RP# can be VIH or VHH. The Clear Status Register
command is only valid when the WSM is off or the device is suspended.
Datasheet
25
28F320J5 and 28F640J5
4.6
Block Erase Command
Erase is executed one block at a time and initiated by a two-cycle command. A block erase setup is
first written, followed by an block erase confirm. This command sequence requires an appropriate
address within the block to be erased (erase changes all block data to FFH). Block preconditioning,
erase, and verify are handled internally by the WSM (invisible to the system). After the two-cycle
block erase sequence is written, the device automatically outputs status register data when read (see
Figure 8, “Block Erase Flowchart” on page 34). The CPU can detect block erase completion by
analyzing the output of the STS pin or status register bit SR.7. Toggle OE#, CE0, CE1, or CE2 to
update the status register.
When the block erase is complete, status register bit SR.5 should be checked. If a block erase error
is detected, the status register should be cleared before system software attempts corrective actions.
The CUI remains in read status register mode until a new command is issued.
This two-step command sequence of set-up followed by execution ensures that block contents are
not accidentally erased. An invalid Block Erase command sequence will result in both status
register bits SR.4 and SR.5 being set to “1.” Also, reliable block erasure can only occur when VCC
is valid and VPEN = VPENH. If block erase is attempted while VPEN ≤ VPENLK, SR.3 and SR.5 will
be set to “1.” Successful block erase requires that the corresponding block lock-bit be cleared or, if
set, that RP# = VHH. If block erase is attempted when the corresponding block lock-bit is set and
RP# = VIH, SR.1 and SR.5 will be set to “1.” Block erase operations with VIH < RP# < VHH
produce spurious results and should not be attempted.
4.7
Block Erase Suspend Command
The Block Erase Suspend command allows block-erase interruption to read or program data in
another block of memory. Once the block erase process starts, writing the Block Erase Suspend
command requests that the WSM suspend the block erase sequence at a predetermined point in the
algorithm. The device outputs status register data when read after the Block Erase Suspend
command is written. Polling status register bit SR.7 then SR.6 can determine when the block erase
operation has been suspended (both will be set to “1”). In default mode, STS will also transition to
VOH. Specification tWHRH defines the block erase suspend latency.
At this point, a Read Array command can be written to read data from blocks other than that which
is suspended. A program command sequence can also be issued during erase suspend to program
data in other blocks. During a program operation with block erase suspended, status register bit
SR.7 will return to “0” and the STS output (in default mode) will transition to VOL.
The only other valid commands while block erase is suspended are Read Query, Read Status
Register, Clear Status Register, Configure, and Block Erase Resume. After a Block Erase Resume
command is written to the flash memory, the WSM will continue the block erase process. Status
register bits SR.6 and SR.7 will automatically clear and STS (in default mode) will return to VOL.
After the Erase Resume command is written, the device automatically outputs status register data
when read (see Figure 9, “Block Erase Suspend/Resume Flowchart” on page 35). VPEN must
remain at VPENH (the same VPEN level used for block erase) while block erase is suspended. RP#
must also remain at VIH or VHH (the same RP# level used for block erase). Block erase cannot
resume until program operations initiated during block erase suspend have completed.
26
Datasheet
28F320J5 and 28F640J5
4.8
Write to Buffer Command
To program the flash device, a Write to Buffer command sequence is initiated. A variable number
of bytes, up to the buffer size, can be loaded into the buffer and written to the flash device. First, the
Write to Buffer setup command is issued along with the Block Address (see Figure 6, “Write to
Buffer Flowchart” on page 32). At this point, the eXtended Status Register (XSR, see Table 17,
“Status Register Definition” on page 31) information is loaded and XSR.7 reverts to “buffer
available” status. If XSR.7 = 0, the write buffer is not available. To retry, continue monitoring
XSR.7 by issuing the Write to Buffer setup command with the Block Address until XSR.7 = 1.
When XSR.7 transitions to a “1,” the buffer is ready for loading.
Now a word/byte count is given to the part with the Block Address. On the next write, a device
start address is given along with the write buffer data. Subsequent writes provide additional device
addresses and data, depending on the count. All subsequent addresses must lie within the start
address plus the count.
Internally, this device programs many flash cells in parallel. Because of this parallel programming,
maximum programming performance and lower power are obtained by aligning the start address at
the beginning of a write buffer boundary (i.e., A4–A0 of the start address = 0).
After the final buffer data is given, a Write Confirm command is issued. This initiates the WSM
(Write State Machine) to begin copying the buffer data to the flash array. If a command other than
Write Confirm is written to the device, an “Invalid Command/Sequence” error will be generated
and status register bits SR.5 and SR.4 will be set to a “1.” For additional buffer writes, issue
another Write to Buffer setup command and check XSR.7.
If an error occurs while writing, the device will stop writing, and status register bit SR.4 will be set
to a “1” to indicate a program failure. The internal WSM verify only detects errors for “1”s that do
not successfully program to “0”s. If a program error is detected, the status register should be
cleared. Any time SR.4 and/or SR.5 is set (e.g., a media failure occurs during a program or an
erase), the device will not accept any more Write to Buffer commands. Additionally, if the user
attempts to program past an erase block boundary with a Write to Buffer command, the device will
abort the write to buffer operation. This will generate an “Invalid Command/Sequence” error and
status register bits SR.5 and SR.4 will be set to a “1.”
Reliable buffered writes can only occur when VPEN = VPENH. If a buffered write is attempted
while VPEN ≤ VPENLK, status register bits SR.4 and SR.3 will be set to “1.” Buffered write attempts
with invalid VCC and VPEN voltages produce spurious results and should not be attempted. Finally,
successful programming requires that the corresponding Block Lock-Bit be reset or, if set, that RP#
= VHH. If a buffered write is attempted when the corresponding Block Lock-Bit is set and RP# =
VIH, SR.1 and SR.4 will be set to “1.” Buffered write operations with VIH < RP# < VHH produce
spurious results and should not be attempted.
4.9
Byte/Word Program Commands
Byte/Word program is executed by a two-cycle command sequence. Byte/Word program setup
(standard 40H or alternate 10H) is written followed by a second write that specifies the address and
data (latched on the rising edge of WE#). The WSM then takes over, controlling the program and
program verify algorithms internally. After the program sequence is written, the device
automatically outputs status register data when read (see Figure 7, “Byte/Word Program
Flowchart” on page 33). The CPU can detect the completion of the program event by analyzing the
STS pin or status register bit SR.7.
Datasheet
27
28F320J5 and 28F640J5
When program is complete, status register bit SR.4 should be checked. If a program error is
detected, the status register should be cleared. The internal WSM verify only detects errors for “1”s
that do not successfully program to “0”s. The CUI remains in read status register mode until it
receives another command.
Reliable byte/word programs can only occur when VCC and VPEN are valid. If a byte/word
program is attempted while VPEN ≤ VPENLK, status register bits SR.4 and SR.3 will be set to “1.”
Successful byte/word programs require that the corresponding block lock-bit be cleared or, if set,
that RP# = VHH. If a byte/word program is attempted when the corresponding block lock-bit is set
and RP# = VIH, SR.1 and SR.4 will be set to “1.” Byte/word program operations with VIH < RP# <
VHH produce spurious results and should not be attempted.
4.10
Configuration Command
The Status (STS) pin can be configured to different states using the Configuration command. Once
the STS pin has been configured, it remains in that configuration until another configuration
command is issued or RP# is asserted low. Initially, the STS pin defaults to RY/BY# operation
where RY/BY# low indicates that the state machine is busy. RY/BY# high indicates that the state
machine is ready for a new operation or suspended. Table 15, “Write Protection Alternatives” on
page 30 displays the possible STS configurations.
To reconfigure the Status (STS) pin to other modes, the Configuration command is given followed
by the desired configuration code. The three alternate configurations are all pulse mode for use as a
system interrupt as described below. For these configurations, bit 0 controls Erase Complete
interrupt pulse, and bit 1 controls Program Complete interrupt pulse. Supplying the 00h
configuration code with the Configuration command resets the STS pin to the default RY/BY#
level mode. The possible configurations and their usage are described in Table 15. The
Configuration command may only be given when the device is not busy or suspended. Check SR.7
for device status. An invalid configuration code will result in both status register bits SR.4 and
SR.5 being set to “1.” When configured in one of the pulse modes, the STS pin pulses low with a
typical pulse width of 250 ns.
4.11
Set Block and Master Lock-Bit Commands
A flexible block locking and unlocking scheme is enabled via a combination of block lock-bits and
a master lock-bit. Out of the factory, the block lock-bits and the master lock-bit are unlocked. The
block lock-bits gate program and erase operations while the master lock-bit gates block-lock bit
modification. With the master lock-bit not set, individual block lock-bits can be set using the Set
Block Lock-Bit command. The Set Master Lock-Bit command, in conjunction with RP# = VHH,
sets the master lock-bit. After the master lock-bit is set, subsequent setting of block lock-bits
requires both the Set Block Lock-Bit command and VHH on the RP# pin. These commands are
invalid while the WSM is running or the device is suspended. See Table 14, “Identifier Codes” on
page 25 for a summary of hardware and software write protection options.
Set block lock-bit and master lock-bit commands are executed by a two-cycle sequence. The set
block or master lock-bit setup along with appropriate block or device address is written followed
by either the set block lock-bit confirm (and an address within the block to be locked) or the set
master lock-bit confirm (and any device address). The WSM then controls the set lock-bit
algorithm. After the sequence is written, the device automatically outputs status register data when
read (see Figure 10, “Set Block Lock-Bit Flowchart” on page 36). The CPU can detect the
completion of the set lock-bit event by analyzing the STS pin output or status register bit SR.7.
28
Datasheet
28F320J5 and 28F640J5
When the set lock-bit operation is complete, status register bit SR.4 should be checked. If an error
is detected, the status register should be cleared. The CUI will remain in read status register mode
until a new command is issued.
This two-step sequence of set-up followed by execution ensures that lock-bits are not accidentally
set. An invalid Set Block or Master Lock-Bit command will result in status register bits SR.4 and
SR.5 being set to “1.” Also, reliable operations occur only when VCC and VPEN are valid. With
VPEN ≤ VPENLK, lock-bit contents are protected against alteration.
A successful set block lock-bit operation requires that the master lock-bit be zero or, if the master
lock-bit is set, that RP# = VHH. If it is attempted with the master lock-bit set and RP# = VIH, SR.1
and SR.4 will be set to “1” and the operation will fail. Set block lock-bit operations while VIH <
RP# < VHH produce spurious results and should not be attempted. A successful set master lock-bit
operation requires that RP# = VHH. If it is attempted with RP# = VIH, SR.1 and SR.4 will be set to
“1” and the operation will fail. Set master lock-bit operations with VIH < RP# < VHH produce
spurious results and should not be attempted.
4.12
Clear Block Lock-Bits Command
All set block lock-bits are cleared in parallel via the Clear Block Lock-Bits command. With the
master lock-bit not set, block lock-bits can be cleared using only the Clear Block Lock-Bits
command. If the master lock-bit is set, clearing block lock-bits requires both the Clear Block LockBits command and VHH on the RP# pin. This command is invalid while the WSM is running or the
device is suspended. See Table 14, “Identifier Codes” on page 25 for a summary of hardware and
software write protection options.
Clear block lock-bits command is executed by a two-cycle sequence. A clear block lock-bits setup
is first written. The device automatically outputs status register data when read (see Figure 11,
“Clear Block Lock-Bit Flowchart” on page 37). The CPU can detect completion of the clear block
lock-bits event by analyzing the STS pin output or status register bit SR.7.
When the operation is complete, status register bit SR.5 should be checked. If a clear block lock-bit
error is detected, the status register should be cleared. The CUI will remain in read status register
mode until another command is issued.
This two-step sequence of set-up followed by execution ensures that block lock-bits are not
accidentally cleared. An invalid Clear Block Lock-Bits command sequence will result in status
register bits SR.4 and SR.5 being set to “1.” Also, a reliable clear block lock-bits operation can
only occur when VCC and VPEN are valid. If a clear block lock-bits operation is attempted while
VPEN ≤ VPENLK, SR.3 and SR.5 will be set to “1.” A successful clear block lock-bits operation
requires that the master lock-bit is not set or, if the master lock-bit is set, that RP# = VHH. If it is
attempted with the master lock-bit set and RP# = VIH, SR.1 and SR.5 will be set to “1” and the
operation will fail. A clear block lock-bits operation with VIH < RP# < VHH produce spurious
results and should not be attempted.
If a clear block lock-bits operation is aborted due to VPEN or VCC transitioning out of valid range or
RP# active transition, block lock-bit values are left in an undetermined state. A repeat of clear
block lock-bits is required to initialize block lock-bit contents to known values. Once the master
lock-bit is set, it cannot be cleared.
Datasheet
29
28F320J5 and 28F640J5
Table 15. Write Protection Alternatives
Operation
Master
Lock-Bit
Block Erase or Program
X
Set or Clear Block Lock-Bits
Set Master Lock-Bit
Block
Lock-Bit
RP#
0
VIH or
VHH
1
VIH
Block is Locked. Block Erase and Program Disabled
VHH
Block Lock-Bit Override. Block Erase and Program
Enabled
Effect
Block Erase and Program Enabled
0
X
VIH or
VHH
1
X
VIH
Master Lock-Bit Is Set. Set or Clear Block Lock-Bit
Disabled
VHH
Master Lock-Bit Override. Set or Clear Block Lock-Bit
Enabled
VIH
Set Master Lock-Bit Disabled
VHH
Set Master Lock-Bit Enabled
X
X
Set or Clear Block Lock-Bit Enabled
Table 16. Configuration Coding Definitions
Reserved
Pulse on
Program
Complete(1)
Pulse on
Erase
Complete(1)
Bits 7—2
Bit 1
Bit 0
DQ7–DQ2 = Reserved
DQ7–DQ2 are reserved for future use.
DQ1–DQ0 = STS Pin Configuration Codes
00 = default, level mode RY/BY#
(device ready) indication
01 = pulse on Erase complete
10 = pulse on Program complete
11 = pulse on Erase or Program Complete
default (DQ1–DQ0 = 00) RY/BY#, level mode
— used to control HOLD to a memory controller to prevent
accessing a flash memory subsystem while any flash device's
WSM is busy.
Configuration Codes 01b, 10b, and 11b are all pulse mode
such that the STS pin pulses low then high when the operation
indicated by the given configuration is completed.
Configuration Command Sequences for STS pin configuration
(masking bits DQ7–DQ2 to 00h) are as follows:
Default RY/BY# level mode: B8h, 00h
ER INT (Erase Interrupt): B8h, 01h
Pulse-on-Erase Complete
PR INT (Program Interrupt): B8h, 02h
Pulse-on-Program Complete
ER/PR INT (Erase or Program Interrupt): B8h, 03h
Pulse-on-Erase or Program Complete
configuration 01 ER INT, pulse mode
— used to generate a system interrupt pulse when any flash
device in an array has completed a Block Erase or sequence of
Queued Block Erases. Helpful for reformatting blocks after file
system free space reclamation or “cleanup”
configuration 10 PR INT, pulse mode
— used to generate a system interrupt pulse when any flash
device in an array has complete a Program operation. Provides
highest performance for servicing continuous buffer write
operations.
configuration 11 ER/PR INT, pulse mode
— used to generate system interrupts to trigger servicing of
flash arrays when either erase or program operations are
completed when a common interrupt service routine is desired.
NOTE:
1. When the device is configured in one of the pulse modes, the STS pin pulses low with a typical pulse width of
250 ns.
30
Datasheet
28F320J5 and 28F640J5
Table 17. Status Register Definition
WSMS
ESS
ECLBS
PSLBS
VPENS
R
DPS
R
bit 7
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
bit 0
High Z When
Busy?
Status Register Bits
Notes
No
SR.7 = WRITE STATE MACHINE STATUS
1 = Ready
0 = Busy
Check STS or SR.7 to determine block erase,
program, or lock-bit configuration completion.
SR.6–SR.0 are not driven while SR.7 = “0.”
Yes
SR.6 = ERASE SUSPEND STATUS
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
If both SR.5 and SR.4 are “1”s after a block
erase or lock-bit configuration attempt, an
improper command sequence was entered.
Yes
SR.5 = ERASE AND CLEAR LOCK-BITS STATUS
1 = Error in Block Erasure or Clear Lock-Bits
0 = Successful Block Erase or Clear Lock-Bits
Yes
SR.4 = PROGRAM AND SET LOCK-BIT STATUS
1 = Error in Programming or Set Master/Block
Lock-Bit
0 = Successful Programming or Set Master/Block
Lock Bit
SR.3 does not provide a continuous
programming voltage level indication. The
WSM interrogates and indicates the
programming voltage level only after Block
Erase, Program, Set Block/Master Lock-Bit, or
Clear Block Lock-Bits command sequences.
Yes
SR.3 = PROGRAMMING VOLTAGE STATUS
1 = Low Programming Voltage Detected,
Operation Aborted
0 = Programming Voltage OK
Yes
SR.2 = RESERVED FOR FUTURE ENHANCEMENTS
Yes
SR.1 = DEVICE PROTECT STATUS
1 = Master Lock-Bit, Block Lock-Bit and/or RP# Lock
Detected, Operation Abort
0 = Unlock
Yes
SR.0 = RESERVED FOR FUTURE ENHANCEMENTS
SR.1 does not provide a continuous indication
of master and block lock-bit values. The WSM
interrogates the master lock-bit, block lock-bit,
and RP# only after Block Erase, Program, or
Lock-Bit configuration command sequences. It
informs the system, depending on the
attempted operation, if the block lock-bit is set,
master lock-bit is set, and/or RP# is not VHH.
Read the block lock and master lock
configuration codes using the Read Identifier
Codes command to determine master and
block lock-bit status.
SR.2 and SR.0 are reserved for future use
and should be masked when polling the status
register.
Table 18. eXtended Status Register Definition
WBS
Reserved
bit 7
bits 6—0
High Z When
Busy?
No
Yes
Datasheet
Status Register Bits
XSR.7 = WRITE BUFFER STATUS
1 = Write buffer available
0 = Write buffer not available
XSR.6–XSR.0 = RESERVED FOR FUTURE
ENHANCEMENTS
Notes
After a Buffer-Write command, XSR.7 = 1
indicates that a Write Buffer is available.
SR.6–SR.0 are reserved for future use and
should be masked when polling the status
register.
31
28F320J5 and 28F640J5
Figure 6. Write to Buffer Flowchart
Start
Set Time-Out
Issue Write to Buffer
Command E8H, Block
Address
No
Command
Write
Write to Buffer
Comments
Data = E8H
Block Address
XSR. 7 = Valid
Addr = Block Address
Read
Read Extended
Status Register
Check XSR. 7
1 = Write Buffer Available
0 = Write Buffer Not Available
Standby
Write
(Note 1, 2)
Data = N = Word/Byte Count
N = 0 Corresponds to Count = 1
Addr = Block Address
Write
(Note 3, 4)
Data = Write Buffer Data
Addr = Device Start Address
Write Word or Byte
Count, Block Address
Write
(Note 5, 6)
Data = Write Buffer Data
Addr = Device Address
Write Buffer Data,
Start Address
Write
X=0
Read
(Note 7)
Status Register Data with the
Device Enabled, OE# Low
Updates SR
Addr = Block Address
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
XSR.7 =
0
Write to
Buffer Time-Out?
1
Yes
Check
X = N?
No
Abort Write to
Buffer Command?
Yes
Bus
Operation
Yes
Yes
Write to Another
Block Address
No
Write to Buffer
Aborted
Write Next Buffer Data,
Device Address
X=X+1
Program Buffer to Flash
Confirm D0H
Another Write to
Buffer?
Issue Read
Status Command
No
Program Buffer
to Flash
Confirm
Data = D0H
Addr = Block Address
1. Byte or word count values on DQ 0 - DQ7 are loaded into the
count register. Count ranges on this device for byte mode are N
= 00H to 1FH and for word mode are N = 0000H to 000FH.
2. The device now outputs the status register when read (XSR is
no longer available).
3. Write Buffer contents will be programmed at the device start
address or destination flash address.
4. Align the start address on a Write Buffer boundary for
maximum programming performance (i.e., A 4 - A0 of the start
address = 0).
5. The device aborts the Write to Buffer command if the current
address is outside of the original block address.
6. The status register indicates an "improper command
sequence" if the Write to Buffer command is aborted. Follow this
with a Clear Status Register command.
7. Toggling OE# (low to high to low) updates the status register.
This can be done in place of issuing the Read Status Register
command.
Full status check can be done after all erase and write sequences
complete. Write FFH after the last operation to reset the device to
read array mode.
Read Status Register
1
0
SR.7 =
1
Full Status
Check if Desired
Programming
Complete
0606_07
32
Datasheet
28F320J5 and 28F640J5
Figure 7. Byte/Word Program Flowchart
Start
Write 40H,
Address
Write Data and
Address
Read Status
Register
Command
Comments
Write
Setup Byte/
Word Program
Data = 40H
Addr = Location to Be Programmed
Write
Byte/Word
Program
Data = Data to Be Programmed
Addr = Location to Be Programmed
Read
(Note 1)
Status Register Data
Standby
Check SR.7
1 = WSM Ready
0 = WSM Busy
1. Toggling OE# (low to high to low) updates the status register. This
can be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
0
SR.7 =
Bus
Operation
SR full status check can be done after each program operation, or
after a sequence of programming operations.
1
Full Status
Check if Desired
Write FFH after the last program operation to place device in read
array mode.
Byte/Word
Program Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status
Register Data
(See Above)
Check SR.3
1 = Programming to Voltage Error
Detect
Standby
Check SR.1
1 = Device Protect Detect
RP# = VIH , Block Lock-Bit Is Set
Only required for systems
implemeting lock-bit configuration.
Standby
Check SR.4
1 = Programming Error
Voltage Range Error
0
1
SR.1 =
Device Protect Error
0
1
SR.4 =
Programming Error
0
Byte/Word
Program
Successful
Comments
Standby
1
SR.3 =
Command
Toggling OE# (low to high to low) updates the status register. This can
be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register
command in cases where multiple locations are programmed before
full status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
0606_08
Datasheet
33
28F320J5 and 28F640J5
Figure 8. Block Erase Flowchart
Start
Issue Single Block Erase
Command 20H, Block
Address
Bus
Operation
Command
Write
Erase Block
Write (Note 1)
Erase
Confirm
Read
Standby
Write Confirm D0H
Block Address
Comments
Data = 20H
Addr = Block Address
Data = D0H
Addr = X
Status register data
With the device enabled,
OE# low updates SR
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
1. The Erase Confirm byte must follow Erase Setup.
This device does not support erase queuing. Please see
Application note AP-646 For software erase queuing
compatibility.
Read
Status Register
Full status check can be done after all erase and write
sequences complete. Write FFH after the last operation to
reset the device to read array mode.
No
Suspend
Erase Loop
SR.7 =
0
Suspend Erase
Yes
1
Full Status
Check if Desired
Erase Flash
Block(s) Complete
0606_09
34
Datasheet
28F320J5 and 28F640J5
Figure 9. Block Erase Suspend/Resume Flowchart
Start
Bus
Operation
Command
Write
Erase Suspend
Write B0H
0
Data = B0H
Addr = X
Status Register Data
Addr = X
Read
Read Status Register
Comments
Standby
Check SR.7
1 - WSM Ready
0 = WSM Busy
Standby
Check SR.6
1 = Block Erase Suspended
0 = Block Erase Completed
SR.7 =
Write
Erase Resume
Data = D0H
Addr = X
1
0
SR.6 =
Block Erase Completed
1
Read
Program
Read or Program?
Read Array
Data
No
Program
Loop
Done?
Yes
Write D0H
Write FFH
Block Erase Resumed
Read Array Data
0606_10
Datasheet
35
28F320J5 and 28F640J5
Figure 10. Set Block Lock-Bit Flowchart
Start
Bus
Operation
Command
Comments
Write 60H,
Block/Device Address
Write
Set Block/Master
Lock-Bit Setup
Data = 60H
Addr =Block Address (Block),
Device Address (Master)
Write 01H/F1H,
Block/Device Address
Write
Set Block or Master
Lock-Bit Confirm
Data = 01H (Block)
F1H (Master)
Addr = Block Address (Block),
Device Address (Master)
Read
Read Status Register
Status Register Data
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
0
SR.7 =
Repeat for subsequent lock-bit operations.
1
Full status check can be done after each lock-bit set operation or after
a sequence of lock-bit set operations
Full Status
Check if Desired
Write FFH after the last lock-bit set operation to place device in read
array mode.
Set Lock-Bit Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
1
SR.3 =
0
1
Command Sequence
Error
0
1
0
Standby
Check SR.1
1 = Device Protect RP# = VIH
(Set Master Lock-Bit Operation)
RP# = VIH , Master Lock-Bit Is Set
(set Block Lock-Bit Operation)
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.4
1 = Set Lock-Bit Error
Device Protect Error
SR.4,5 =
SR.4 =
Check SR.3
1 = Programming Voltage Error
Detect
1
0
Set Lock-Bit Error
Comments
Standby
Voltage Range Error
SR. 1 =
Command
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command, in cases where multiple lock-bits are set before full
status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
Set Lock-Bit
Successful
0606_11
36
Datasheet
28F320J5 and 28F640J5
Figure 11. Clear Block Lock-Bit Flowchart
Start
Write 60H
Bus
Operation
Command
Write
Clear Block
Lock-Bits Setup
Data = 60H
Addr = X
Write
Clear Block or
Lock-Bits Confirm
Data = D0H
Addr = X
Write D0H
Read
Status Register Data
Read Status Register
Check SR.7
1 = WSM Ready
0 = WSM Busy
Standby
0
SR.7 =
Comments
Write FFH after the clear lock-bits operation to place device in read
array mode.
1
Full Status
Check if Desired
Clear Block Lock-Bits
Complete
FULL STATUS CHECK PROCEDURE
Bus
Operation
Read Status Register
Data (See Above)
1
SR.3 =
0
0
1
SR.4,5 =
Command Sequence
Error
0
1
SR.5 =
Check SR.3
1 = Programming Voltage Error
Detect
Standby
Check SR.1
1 = Device Protect RP# = VIH ,
Master Lock-Bit Is Set
Standby
Check SR.4, 5
Both 1 = Command Sequence
Error
Standby
Check SR.5
1 = Clear Block Lock-Bits Error
1
Device Protect Error
Clear Block Lock-Bits
Error
Comments
Standby
Voltage Range Error
SR. 1 =
Command
SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Status
Register command.
If an error is detected, clear the status register before attempting retry
or other error recovery.
0
Clear Block Lock-Bits
Successful
0606_12
Datasheet
37
28F320J5 and 28F640J5
5.0
Design Considerations
5.1
Three-Line Output Control
The device will often be used in large memory arrays. Intel provides five control inputs (CE0, CE1,
CE2, OE#, and RP#) to accommodate multiple memory connections. This control provides for:
• Lowest possible memory power dissipation.
• Complete assurance that data bus contention will not occur.
To use these control inputs efficiently, an address decoder should enable the device (see Table 2)
while OE# should be connected to all memory devices and the system’s READ# control line. This
assures that only selected memory devices have active outputs while de-selected memory devices
are in standby mode. RP# should be connected to the system POWERGOOD signal to prevent
unintended writes during system power transitions. POWERGOOD should also toggle during
system reset.
5.2
STS and Block Erase, Program, and Lock-Bit Configuration
Polling
STS is an open drain output that should be connected to VCCQ by a pull-up resistor to provide a
hardware method of detecting block erase, program, and lock-bit configuration completion. In
default mode, it transitions low after block erase, program, or lock-bit configuration commands and
returns to High Z when the WSM has finished executing the internal algorithm. For alternate
configurations of the STS pin, see the Configuration command.
STS can be connected to an interrupt input of the system CPU or controller. It is active at all times.
STS, in default mode, is also High Z when the device is in block erase suspend (with programming
inactive) or in reset/power-down mode.
5.3
Power Supply Decoupling
Flash memory power switching characteristics require careful device decoupling. System designers
are interested in three supply current issues; standby current levels, active current levels and
transient peaks produced by falling and rising edges of CE0, CE1, CE2, and OE#. Transient current
magnitudes depend on the device outputs’ capacitive and inductive loading. Two-line control and
proper decoupling capacitor selection will suppress transient voltage peaks. Since Intel StrataFlash
memory devices draw their power from three VCC pins (these devices do not include a VPP pin), it
is recommended that systems without separate power and ground planes attach a 0.1 µF ceramic
capacitor between each of the device’s three VCC pins (this includes VCCQ) and ground. These
high-frequency, low-inductance capacitors should be placed as close as possible to package leads
on each Intel StrataFlash memory device. Each device should have a 0.1 µF ceramic capacitor
connected between its VCC and GND. These high-frequency, low inductance capacitors should be
placed as close as possible to package leads. Additionally, for every eight devices, a 4.7 µF
electrolytic capacitor should be placed between VCC and GND at the array’s power supply
connection. The bulk capacitor will overcome voltage slumps caused by PC board trace
inductance.
38
Datasheet
28F320J5 and 28F640J5
5.4
Input Signal Transitions – Reducing Overshoots and
Undershoots When Using Buffers/Transceivers
As faster, high-drive devices such as transceivers or buffers drive input signals to flash memory
devices, overshoots and undershoots can sometimes cause input signals to exceed flash memory
specifications (see Section 6.1, Absolute Maximum Ratings). Many buffer/transceiver vendors now
carry bus-interface devices with internal output-damping resistors or reduced-drive outputs.
Internal output-damping resistors diminish the nominal output drive currents, while still leaving
sufficient drive capability for most applications. These internal output-damping resistors help
reduce unnecessary overshoots and undershoots. Transceivers or buffers with balanced- or lightdrive outputs also reduce overshoots and undershoots by diminishing output-drive currents. When
selecting a buffer/transceiver interface design to flash, devices with internal output-damping
resistors or reduced-drive outputs should be considered to minimize overshoots and undershoots.
For additional information, please refer to AP-647, 5 Volt Intel StrataFlash® Memory Design Guide
(order 292205).
5.5
VCC, VPEN, RP# Transitions
Block erase, program, and lock-bit configuration are not guaranteed if VPEN or VCC falls outside of
the specified operating ranges, or RP# ≠ VIH or VHH. If RP# transitions to VIL during block erase,
program, or lock-bit configuration, STS (in default mode) will remain low for a maximum time of
tPLPH + tPHRH until the reset operation is complete. Then, the operation will abort and the device
will enter reset/power-down mode. The aborted operation may leave data partially corrupted after
programming, or partially altered after an erase or lock-bit configuration. Therefore, block erase
and lock-bit configuration commands must be repeated after normal operation is restored. Device
power-off or RP# = VIL clears the status register.
The CUI latches commands issued by system software and is not altered by VPEN, CE0, CE1, or
CE2 transitions, or WSM actions. Its state is read array mode upon power-up, after exit from reset/
power-down mode, or after VCC transitions below VLKO. VCC must be kept at or above VPEN
during VCC transitions.
After block erase, program, or lock-bit configuration, even after VPEN transitions down to VPENLK,
the CUI must be placed in read array mode via the Read Array command if subsequent access to
the memory array is desired. VPEN must be kept at or below VCC during VPEN transitions.
5.6
Power-Up/Down Protection
The device is designed to offer protection against accidental block erasure, programming, or lockbit configuration during power transitions. Internal circuitry resets the CUI to read array mode at
power-up.
A system designer must guard against spurious writes for VCC voltages above VLKO when VPEN is
active. Since WE# must be low and the device enabled (see Table 2) for a command write, driving
WE# to VIH or disabling the device will inhibit writes. The CUI’s two-step command sequence
architecture provides added protection against data alteration.
Keeping VPEN below VPENLK prevents inadvertent data alteration. In-system block lock and
unlock capability protects the device against inadvertent programming. The device is disabled
while RP# = VIL regardless of its control inputs.
Datasheet
39
28F320J5 and 28F640J5
5.7
Power Dissipation
When designing portable systems, designers must consider battery power consumption not only
during device operation, but also for data retention during system idle time. Flash memory’s
nonvolatility increases usable battery life because data is retained when system power is removed.
6.0
Electrical Specifications
6.1
Absolute Maximum Ratings
Parameter
Temperature under Bias Expanded
Storage Temperature
Voltage On Any Pin (except RP#)
RP# Voltage with Respect to GND during Lock-Bit
Configuration Operations
Output Short Circuit Current
Maximum Rating for
Commercial
Temperature Devices
Maximum Rating for
Extended
Temperature Devices
Notes
–20 °C to +70 °C
–65 °C to +125 °C
–2.0 V to +7.0 V
–40 °C to +85 °C
–65 °C to +125 °C
–2.0 V to +7.0 V
5
1
–2.0 V to +14.0 V
–2.0 V to +14.0 V
1,2,3
100 mA
100 mA
4
NOTES:
1. All specified voltages are with respect to GND. Minimum DC voltage is –0.5 V on input/output pins and –0.2 V
on VCC and VPEN pins. During transitions, this level may undershoot to –2.0 V for periods <20 ns. Maximum
DC voltage on input/output pins, VCC, and VPEN is VCC +0.5 V which, during transitions, may overshoot to
VCC +2.0 V for periods <20 ns.
2. Maximum DC voltage on RP# may overshoot to +14.0 V for periods <20 ns.
3. RP# voltage is normally at VIL or VIH. Connection to supply of VHH is allowed for a maximum cumulative
period of 80 hours.
4. Output shorted for no more than one second. No more than one output shorted at a time.
5. Extended temperature for 0.4 micron ETOXTM V process technology is from -20° C to +85° C.
NOTICE: This datasheet contains preliminary information on new products in production. The specifications are subject to
change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a design.
Warning:
6.2
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage. These are stress ratings only.
Operation beyond the “Operating Conditions” is not recommended and extended exposure beyond the “Operating Conditions”
may affect device reliability.
Operating Conditions
Table 19. Temperature and VCC Operating Conditions
Symbol
Parameter
Notes
Min
Max
Unit
Test Condition
Ambient Temperature
TA
Operating Temperature
–20
+85
°C
VCC
VCC1 Supply Voltage (5 V ± 10%)
4.50
5.50
V
VCCQ1
VCCQ1 Supply Voltage (5 V ± 10%)
4.50
5.50
V
VCCQ2
VCCQ2 Supply Voltage (2.7 V —3.6 V)
2.70
3.60
V
40
Datasheet
28F320J5 and 28F640J5
6.3
Capacitance
TA = +25°C, f = 1 MHz
Parameter(1)
Symbol
Typ
Max
Unit
Condition
CIN
Input Capacitance
6
8
pF
VIN = 0.0 V
COUT
Output Capacitance
8
12
pF
VOUT = 0.0 V
NOTE: 1. Sampled, not 100% tested.
6.4
DC Characteristics
Symbol
Parameter
Notes
Typ
Max
Unit
Test Conditions
ILI
Input and VPEN Load Current
1
±1
µA
ILO
Output Leakage Current
1
±10
µA
VCC = VCC Max, VIN = VCC or GND
ICCS
VCC Standby Current
ICCD
VCC Power-Down Current
ICCR
VCC Read Current
ICCW
VCC Program or Set Lock-Bit
Current
ICCE
VCC Block Erase or Clear Block
Lock-Bits Current
ICCES
VCC Block Erase Suspend
Current
Datasheet
1,2,3
1,3,4
1,4,5
1,4,5
1,6
VCC = VCC Max, VIN = VCC or GND
80
150
µA
CMOS Inputs, VCC = VCC Max,
CE0 = CE1 = CE2 = RP# = VCCQ1 ± 0.2 V
450
900
µA
CMOS Inputs, RP# = VCC = VCC Max,
CE0 = CE1 = CE2 = VCCQ2 Min
325
650
µA
CMOS Inputs, RP# = VCC = VCC Max,
CE2 = GND, CE0 = CE1 = VCCQ2 Min
210
400
µA
CMOS Inputs, RP# = VCC = VCC Max,
CE1 = CE2 = GND, CE0 = VCCQ2 Min or
CE0 = CE2 = GND, CE1 = VCCQ2 Min
0.71
2
mA
TTL Inputs, VCC = VCC Max,
CE0 = CE1 = CE2 = RP# = VIH
80
125
µA
RP# = GND ± 0.2 V
IOUT (STS) = 0 mA
35
55
mA
CMOS Inputs, VCC = VCCQ =VCC Max
Device is enabled (see Table 2)
f = 5 MHz
IOUT = 0 mA
45
65
mA
TTL Inputs ,VCC = VCC Max
Device is enabled (see Table 2)
f = 5 MHz
IOUT = 0 mA
35
60
mA
CMOS Inputs, VPEN = VCC
40
70
mA
TTL Inputs, VPEN = VCC
35
70
mA
CMOS Inputs, VPEN = VCC
40
80
mA
TTL Inputs, VPEN = VCC
10
mA
Device is disabled (see Table 2)
41
28F320J5 and 28F640J5
DC Characteristics, Continued
Symbol
Parameter
Notes
Min
Max
Unit
0.8
V
VIL
Input Low Voltage
5
–0.5
VIH
Input High Voltage
5
2.0
VOL
Output Low Voltage
2,5
VCC
+ 0.5
Test Conditions
V
0.45
V
VCCQ = VCCQ1 Min, IOL = 5.8 mA
0.4
V
VCCQ = VCCQ2 Min, IOL = 2 mA
V
IOH = –2.5 mA (VCCQ1)
VCCQ = VCCQ1 Min or VCCQ = VCCQ2 Min
VOH
Output High Voltage
3,7
2.4
–2 mA (VCCQ2)
0.85 X
VCCQ
V
VCCQ
–0.4
V
5,7,8
3.6
V
7,8
4.5
VPENLK
VPEN Lockout during Normal
Operations
VPENH
VPEN during Block Erase,
Program, or Lock-Bit Operations
VLKO
VCC Lockout Voltage
9
3.25
VHH
RP# Unlock Voltage
10,11
11.4
5.5
VCCQ = VCCQ1 Min or VCCQ = VCCQ2 Min
IOH = –2.5 mA
VCCQ = VCCQ1 Min or VCCQ = VCCQ2 Min
IOH = –100 µA
V
V
12.6
V
Set master lock-bit
Override lock-bit
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages
and speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
2. Includes STS.
3. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.
4. Add 5 mA for VCCQ = VCCQ2 min.
5. Sampled, not 100% tested.
6. ICCES is specified with the device de-selected. If the device is read or written while in erase suspend mode,
the device’s current draw is ICCR or ICCW.
7. Tie VPEN to VCC (4.5 V–5.5 V).
8. Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not
guaranteed in the range between VPENLK (max) and VPENH (min), and above VPENH (max).
9. Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO, and not guaranteed
in the range between VLKO (min) and VCC (min), and above VCC (max).
10.Master lock-bit set operations are inhibited when RP# = VIH. Block lock-bit configuration operations are
inhibited when the master lock-bit is set and RP# = VIH. Block erases and programming are inhibited when
the corresponding block-lock bit is set and RP# = VIH. Block erase, program, and lock-bit configuration
operations are not guaranteed and should not be attempted with VIH < RP# < VHH.
11.RP# connection to a VHH supply is allowed for a maximum cumulative period of 80 hours.
42
Datasheet
28F320J5 and 28F640J5
Figure 12. Transient Input/Output Reference Waveform for VCCQ = 5.0 V ± 10% (Standard
Testing Configuration)
2.4
2.0
Input
2.0
Output
0.8
Test Points
0.8
0.45
NOTE: AC test inputs are driven at VOH (2.4 VTTL) for a Logic “1” and VOL (0.45 VTTL) for a Logic "0." Input timing begins at
VIH (2.0 VTTL) and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) <10 ns.
Figure 13. Transient Input/Output Reference Waveform
2.7
Input
1.35
Test Points
1.35 Output
0.0
NOTE: AC test inputs are driven at 2.7 V for a Logic “1” and 0.0 V for a Logic “0.” Input timing begins, and output timing ends,
at 1.35 V (50% of VCCQ). Input rise and fall times (10% to 90%) <10 ns.
Figure 14. Transient Equivelent Testing Load Circuit
1.3V
1N914
RL = 3.3 kΩ
Device
Under Test
Out
CL
NOTE: CL Includes Jig Capacitance
Table 20. Test Configuration Capacitance Loading Value
Test Configuration
Datasheet
CL (pF)
VCCQ = 5.0 V ± 10%
100
VCCQ = 2.7 V−3.6 V
50
43
28F320J5 and 28F640J5
AC Characteristics—Read-Only Operations(1)
6.5
Versions
5 V ± 10% VCCQ
–120/–150(2)
(All units in ns unless otherwise noted)
2.7 V—10% VCCQ
–120/–150(2)
#
R1
R2
R3
Sym
tAVAV
tAVQV
tELQV
Parameter
Notes
Min
32 Mbit
120
130 at +85° C
64 Mbit
150
Read/Write Cycle Time
Max
32 Mbit
120
130 at +85° C
64 Mbit
150
Address to Output Delay
32 Mbit
3
120
130 at +85° C
64 Mbit
3
150
3
50
CEX to Output Delay
R4
tGLQV
OE# to Output Delay
R5
tPHQV
RP# High to Output Delay
R6
tELQX
CEX to Output in Low Z
4
0
R7
tGLQX
OE# to Output in Low Z
4
0
R8
tEHQZ
CEX High to Output in High Z
4
55
R9
tGHQZ
OE# High to Output in High Z
4
15
tOH
Output Hold from Address, CEX, or OE# Change,
Whichever Occurs First
4
CEX Low to BYTE# High or Low
4
32 Mbit
R10
R11
R12
tELFL
tELFH
tFLQV
tFHQV
180
64 Mbit
210
0
10
BYTE# to Output Delay
1000
R13
tFLQZ
BYTE# to Output in High Z
4
R14
tEHEL
CEx Disable Pulse Width
4
1000
10
NOTE: CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at
the first edge of CE0, CE1, or CE2 that disables the device (seeTable 2).
1. See Figure 15, “AC Waveform for Read Operations” on page 45 for the maximum allowable input slew rate.
2. See Figure 12, Figure 13, and Figure 14 on page 43, for testing characteristics
3. OE# may be delayed up to tELQV-tGLQV after the first edge of CE0, CE1, or CE2 that enables the device (see
Table 2) without impact on tELQV.
4. Sampled, not 100% tested.
44
Datasheet
28F320J5 and 28F640J5
Figure 15. AC Waveform for Read Operations
Standby
Device
Address Selection
Data Valid
VIH
ADDRESSES [A]
Address Stable
VIL
R1
Disabled (VIH)
R14
CEX [E]
Enabled (VIL)
OE# [G]
VIL
WE# [W]
DATA [D/Q] VOH
VCC
R9
R3
VIH
VIL
DQ0-DQ15
R8
R2
VIH
R4
R10
R5
High Z
R6
Valid Output
VOL
High Z
R7
VIH
VIL
VIH
RP# [P]
VIL
R11
R12
R13
VIH
BYTE# [F]
VIL
0606_16
NOTE: CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at
the first edge of CE0, CE1, or CE2 that disables the device (see Table 2, “Chip Enable Truth Table” on
page 12).
Datasheet
45
28F320J5 and 28F640J5
AC Characteristics— Write Operations(1,2)
6.6
Valid for All
Speeds
Versions
#
Sym
Parameter
Notes
Min
Max
Unit
W1
tPHWL (tPHEL)
RP# High Recovery to WE# (CEX ) Going Low
3
1
µs
W2
tELWL (tWLEL)
CEX (WE#) Low to WE# (CEX) Going Low
4
0
ns
W3
tWP
Write Pulse Width
4
70
ns
W4
tDVWH (tDVEH)
Data Setup to WE# (CEX ) Going High
5
50
ns
W5
tAVWH (tAVEH)
Address Setup to WE# (CEX ) Going High
5
50
ns
W6
tWHEH (tEHWH)
CEX (WE#) Hold from WE# (CEX) High
10
ns
W7
tWHDX (tEHDX)
Data Hold from WE# (CEX ) High
0
ns
W8
tWHAX (tEHAX)
Address Hold from WE# (CEX ) High
0
ns
W9
tWPH
Write Pulse Width High
6
30
ns
W10
tPHHWH (tPHHEH)
RP# VHH Setup to WE# (CEX ) Going High
3
0
ns
W11
tVPWH (tVPEH)
VPEN Setup to WE# (CEX ) Going High
3
0
ns
35
W12
tWHGL (tEHGL)
Write Recovery before Read
7
W13
tWHRL (tEHRL)
WE# (CEX ) High to STS Going Low
8
ns
W14
tQVPH
RP# VHH Hold from Valid SRD, STS Going High
3,8,9
0
ns
W15
tQVVL
VPEN Hold from Valid SRD, STS Going High
3,8,9
0
ns
90
ns
NOTE: CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at
the first edge of CE0, CE1, or CE2 that disables the device (see Table 2 on page 12).
1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same
as during read-only operations. Refer to AC Characteristics–Read-Only Operations.
2. A write operation can be initiated and terminated with either CEX or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (tWP) is defined from CEX or WE# going low (whichever goes low last) to CEX or WE# going
high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. If CEX is driven low 10 ns
before WE# going low, WE# pulse width requirement decreases to tWP - 10 ns.
5. Refer to Table 4 on page 17 for valid AIN and DIN for block erase, program, or lock-bit configuration.
6. Write pulse width high (tWPH) is defined from CEX or WE# going high (whichever goes high first) to CEX or
WE# going low (whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL.
7. For array access, tAVQV is required in addition to tWHGL for any accesses after a write.
8. STS timings are based on STS configured in its RY/BY# default mode.
9. VPEN should be held at VPENH (and if necessary RP# should be held at VHH) until determination of block
erase, program, or lock-bit configuration success (SR.1/3/4/5 = 0).
46
Datasheet
28F320J5 and 28F640J5
Figure 16. AC Waveform for Write Operations
A
ADDRESSES [A]
VIH
VIL
B
C
AIN
AIN
W5
Disabled (V IH)
CEX, (WE#) [E(W)]
Enabled (V IL )
VIL
W6
W2
VIH
VIL
W16
W3
W4
DATA [D/Q]
F
W12
W9
Disabled (V IH)
WE#, (CE X) [W(E)]
Enabled (V IL )
E
W8
W1
VIH
OE# [G]
D
High Z
W7
DIN
Valid
SRD
DIN
DIN
W13
VOH
STS [R]
RP# [P]
VOL
VHH
W10
W14
W11
W15
VIH
VIL
VPENH
VPENLK
VPEN [V]
VIL
0606_17
NOTE: CEX low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at
the first edge of CE0, CE1, or CE2 that disables the device (see Table 2 on page 12). STS is shown in its
default mode (RY/BY#).
a.
b.
c.
d.
e.
f.
Datasheet
VCC power-up and standby.
Write block erase, write buffer, or program setup.
Write block erase or write buffer confirm, or valid address and data.
Automated erase delay.
Read status register or query data.
Write Read Array command.
47
28F320J5 and 28F640J5
Figure 17. AC Waveform for Reset Operation
STS (R)
VIH
VIL
P2
RP# (P)
VIH
VIL
P1
0606_18
NOTE: STS is shown in its default mode (RY/BY#).
Table 21. Reset Specifications(1)
#
Sym
P1
tPLPH
P2
tPHRH
Parameter
Notes
Min
RP# Pulse Low Time
(If RP# is tied to VCC, this specification is not applicable)
2
35
RP# High to Reset during Block Erase, Program, or Lock-Bit
Configuration
3
Max
100
NOTES:
1. These specifications are valid for all product versions (packages and speeds).
2. If RP# is asserted while a block erase, program, or lock-bit configuration operation is not executing then the
minimum required RP# Pulse Low Time is 100 ns.
3. A reset time, tPHQV, is required from the latter of STS (in RY/BY# mode) or RP# going high until outputs are
valid.
48
Datasheet
28F320J5 and 28F640J5
6.7
Block Erase, Program, and Lock-Bit Configuration
Performance(1,2)
#
W16
W16
Notes
Typ(3)
Max
Unit
4,5,6,7
218
654
µs
Byte Program Time (Using Word/Byte Program Command)
4
210
630
µs
Block Program Time (Using Write to Buffer Command)
4
0.8
2.4
sec
Sym
Parameter
Write Buffer Program Time
tWHQV3
tEHQV3
W16
tWHQV4
tEHQV4
Block Erase Time
4
1.0
5.0
sec
W16
tWHQV5
tEHQV5
Set Lock-Bit Time
4
64
75
µs
W16
tWHQV6
tEHQV6
Clear Block Lock-Bits Time
4
.50
7.0
sec
W16
tWHRH
tEHRH
Erase Suspend Latency Time to Read
26
35
µs
NOTES:
1. These performance numbers are valid for all speed versions.
2. Sampled but not 100% tested.
3. Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (tWHQV1, tEHQV1) is 6.8 µs/byte (typical).
7. Effective per-word program time (tWHQV2, tEHQV2) is 13.6 µs/byte (typical).
Datasheet
49
28F320J5 and 28F640J5
7.0
Additional Information
Order Number
Document/Tool
Contact Intel/Distribution
Sales Office
5 Volt Intel StrataFlash Memory 0.25 µ Generation/32-, and 64-Mbit Densities
EAS
®
290667
3 Volt Intel StrataFlash® Memory; 28F128J3A, 28F640J3A, 28F320J3A
datasheet
290608
3 Volt FlashFile™ Memory; 28F160S3 and 28F320S3 datasheet
290609
5 Volt FlashFile™ Memory; 28F160S5 and 28F320S5 datasheet
290429
5 Volt FlashFile™ Memory; 28F008SA datasheet
290598
3 Volt FlashFile™ Memory; 28F004S3, 28F008S3, 28F016S3 datasheet
290597
5 Volt FlashFile™ Memory; 28F004S5, 28F008S5, 28F016S5 datasheet
292235
AP-687 5 Volt Intel StrataFlash® Memory Interface to the SA-1100
297859
AP-677 Intel StrataFlash® Memory Technology
292222
AP-664 Designing Intel StrataFlash® Memory into Intel® Architecture
292221
AP-663 Using the Intel StrataFlash® Memory Write Buffer
292218
AP-660 Migration Guide to 3 Volt Intel StrataFlash® Memory
292205
AP-647 5 Volt Intel StrataFlash® Memory Design Guide
292204
AP-646 Common Flash Interface (CFI) and Command Sets
292202
AP-644 Migration Guide to 5 Volt Intel StrataFlash® Memory
297846
Comprehensive User’s Guide for µBGA* Packages
NOTES:
1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International
customers should contact their local Intel or distribution sales office.
2. Visit Intel’s World Wide Web home page at http://www.intel.com for technical documentation and tools.
For the most current information on Intel StrataFlash memory, visit our website at http://developer.intel.com/
design/flash/isf.
50
Datasheet
28F320J5 and 28F640J5
8.0
Ordering Information
DA2 8 F 6 4 0 J 5 A - 1 5 0
Package
E = 56-Lead TSOP
DA = 56-Lead SSOP
Access Speed (ns)
32 Mbit = 120
64 Mbit = 150
(Commercial Temp)
DT = 56-Lead SSOP
Intel® .25 micron ETOX VITM
Process Technology
(Extended Temp)
Product line designator
for all Intel® Flash
products
Voltage (VCC/VPEN)
5 = 5 V/5 V
Device Density
640 = x8/x16 (64 Mbit)
320 = x8/x16 (32 Mbit)
Product Family
J = Intel StrataFlash® memory,
2 bits-per-cell
NOTE: Extended temperature for 0.4 micron ETOXTM V process technology is from -20° C to +85° C.
Order Code by Density
32 Mbit
Datasheet
64 Mbit
Valid Operational Conditions 5 V VCC
2.7 V – 3.6 V VCCQ
5 V ± 10% VCCQ
Yes
DA28F320J5-120
DA28F640J5-150
Yes
E28F320J5-120
DT28F640J5-150
Yes
Yes
DT28F320J5-120
DA28F640J5A-150
Yes
Yes
DA28F320J5A-120
DT28F640J5A-150
Yes
Yes
E28F320J5A-120
Yes
Yes
DT28F320J5A-120
Yes
Yes
51