600V 54A
APT6010B2FLL
APT6010LFLL
APT6010B2FLL*
APT6010LFLLG*
*G
POWER MOS 7
R
Denotes RoHS Compliant, Pb Free Terminal Finish.
FREDFET
B2FLL
T-MAX™
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
0.100Ω
Ω
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6010B2_LFLL
UNIT
Drain-Source Voltage
600
Volts
ID
Continuous Drain Current @ TC = 25°C
54
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
690
Watts
Linear Derating Factor
5.52
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
216
-55 to 150
°C
300
Amps
54
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 27A)
TYP
MAX
Volts
0.100
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
6-2006
Characteristic / Test Conditions
050-7062 Rev D
Symbol
APT6010B2_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
ID = 54A@ 25°C
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
885
VDD = 400V, VGS = 15V
970
ID = 54A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
9
RG = 0.6Ω
Eon
UNIT
pF
90
150
30
75
12
19
34
VDD = 300V
Fall Time
MAX
6710
1250
ID = 54A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
Test Conditions
µJ
1150
VDD = 400V VGS = 15V
ID = 54A, RG = 5Ω
1220
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
216
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -54A)
1.3
Volts
15
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
54
5
t rr
Reverse Recovery Time
(IS = -54A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -54A, di/dt = 100A/µs)
Tj = 25°C
2.7
Tj = 125°C
7.8
IRRM
Peak Recovery Current
(IS = -54A, di/dt = 100A/µs)
Tj = 25°C
14
Tj = 125°C
20
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
D = 0.9
0.7
0.12
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7062 Rev D
6-2006
0.20
0.08
0.3
t2
0.1
0
SINGLE PULSE
0.05
10-5
t1
Duty Factor D = t1/t2
0.04
10-4
°C/W
4 Starting Tj = +25°C, L = 2.06mH, RG = 25Ω, Peak IL = 54A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID54A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
0.16
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.859
0.009
0.0202
0.293
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
80
60
40
TJ = +125°C
TJ = +25°C
20
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
7.5V
100
80
7V
60
6.5V
40
6V
20
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
V
= 10V @ 27A
GS
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
1.15
50
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
V
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 27A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
8V
0
60
0.0
-50
120
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6-2006
0
TJ = -55°C
VGS=15 &10V
050-7062 Rev D
ID, DRAIN CURRENT (AMPERES)
140
ID, DRAIN CURRENT (AMPERES)
0.0656
Dissipated Power
(Watts)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
TC ( C)
ZEXT
TJ ( C)
0.0271
APT6010B2FLL_LFLL
140
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
VDS=120V
VDS=300V
VDS=480V
8
4
0
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
120
100
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
V
td(off)
100
Coss
IDR, REVERSE DRAIN CURRENT (AMPERES)
= 54A
12
1,000
10
16
D
Ciss
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
100
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT6010B2FLL_LFLL
20,000
220
G
120
= 400V
DD
R
= 5Ω
T = 125°C
J
V
DD
R
G
= 400V
= 5Ω
tr and tf (ns)
80
T = 125°C
60
J
L = 100µH
40
10
20
V
DD
G
30
40
5000
= 400V
J
Eoff
diode reverse recovery
1500
1000
Eon
500
20
30
40
50
60
70 80 90
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20
V
I
L = 100µH
10
10
= 5Ω
E ON includes
Eon and Eoff (µJ)
50 60
70
80 90
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
T = 125°C
2000
6-2006
0
50 60
70
80
90
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
R
050-7062 Rev D
tr
20
2500
0
tf
60
td(on)
20
0
80
40
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
L = 100µH
100
DD
D
30
40
= 400V
= 54A
T = 125°C
4000
J
L = 100µH
E ON includes
Eoff
diode reverse recovery
3000
2000
Eon
1000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6010B2_LFLL
90%
Gate Voltage
10%
Gate Voltage
T 125°C
J
TJ125°C
td(off)
td(on)
Drain Current
tr
tf
5%
Drain Voltage
90%
90%
10%
5%
Drain Voltage
Switching Energy
10%
0
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
6-2006
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7062 Rev D
Drain
Drain
20.80 (.819)
21.46 (.845)