Inchange Semiconductor Product Specification 2N6473 2N6474 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6473 VCBO Collector-base voltage 100 Open base 2N6474 VEBO Emitter-base voltage V 130 2N6473 Collector-emitter voltage UNIT 110 Open emitter 2N6474 VCEO VALUE V 120 Open collector 5 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6473 2N6474 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6473 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 100 IC=0.1A ;IB=0 2N6474 V 120 VCEsat-1 Collector-emitter saturation voltage IC=1.5A;IB=0.15A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=4A;IB=2A 2.5 V VBE-1 Base-emitter on voltage IC=1.5A ; VCE=4V 2.0 V VBE-2 Base-emitter on voltage IC=4A ; VCE=2.5V 3.5 V 2N6473 VCE=100V;VBE=-1.5V TC=100℃ 0.1 2.0 2N6474 VCE=120V;VBE=-1.5V TC=100℃ 0.1 2.0 2N6473 VCE=50V;IB=0 ICEX ICEO Collector cut-off current mA Collector cut-off current 2N6474 1.0 mA 1.0 mA VCE=60V;IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1.5A ; VCE=4V 15 hFE-2 DC current gain IC=4A ; VCE=2.5V 2 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=4V 2 150 250 4 pF MHz Inchange Semiconductor Product Specification 2N6473 2N6474 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3