Inchange Semiconductor Product Specification 2N6049 Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Complement to type 2N3054A APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -90 V VCEO Collector-emitter voltage Open base -55 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -4 A ICM Collector current-peak -10 A IB Base current -2 A PD Power dissipation 75 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 2.33 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6049 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -0.5 V VCEsat-2 Collector-emitter saturation voltage IC=-4A; IB=-0.8A -2.0 V VBE Base -emitter on voltage IC=-0.5A ; VCE=-4V -1.0 V ICEX Collector cut-off current VCE=-90V;VBE(off)=-1.5V TC=150℃ -1.0 -6.0 mA ICEO Collector cut-off current VCE=-30V; IB=0 -0.5 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.5A ; VCE=-4V 25 hFE-2 DC current gain IC=-3A ; VCE=-4V 6 COB Output capacitance IE=0 ; VCB=-10V,f=0.1MHz fT Transition frequency IC=-0.2A ; VCE=-10V;f=1MHz 2 MIN TYP. MAX -55 V 100 200 3.0 UNIT pF Inchange Semiconductor Product Specification 2N6049 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3