Inchange Semiconductor Product Specification 2N6288 2N6290 2N6292 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to PNP type: 2N6107; 2N6109 ;2N6111 APPLICATIONS ・Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 Absolute maximum ratings(Ta=25℃) SYMBOL 固 VCBO PARAMETER CONDITIONS C U D ICON 2N6288 Collector-base voltage 2N6290 Open emitter M E S E 2N6292 VCEO VEBO ANG INCH Collector-emitter voltage Emitter-base voltage 2N6288 2N6290 TOR VALUE Open base 2N6292 UNIT 40 60 V 80 30 50 V 70 Open collector 5 V IC Collector current 7 A ICM Collector current-peak 10 A IB Base current 3 A PT Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6288 2N6290 2N6292 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6288 VCEO(SUS) Collector-emitter sustaining voltage 2N6290 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage IC=0.1A ;IB=0 Base-emitter on voltage IC=3A;IB=0.3A 2N6290 IC=2.5A;IB=0.25A 2N6292 IC=2A;IB=0.2A IC=3A ; VCE=4V 2N6290 IC=2.5A ; VCE=4V 2N6292 IC=2A ; VCE=4V 固电 Base-emitter on voltage IC M E ES ICEO ICEX IEBO hFE-1 hFE-2 fT ANG Collector cut-off current VCE=20V; IB=0 1.0 V 3.5 V 1.5 V R O T UC OND IC=7A ; VCE=4V 2N6288 3.0 V 1.0 mA INCH 2N6290 VCE=40V; IB=0 2N6292 VCE=60V; IB=0 2N6288 VCE=40V; VBE=-1.5V VCE=30V; BE=-1.5V,TC=125℃ 0.1 2.0 Collector cut-off current 2N6290 VCE=60V; VBE=-1.5V VCE=50V; BE=-1.5V,TC=125℃ 0.1 2.0 2N6292 VCE=80V; VBE=-1.5V VCE=70V; BE=-1.5V,TC=125℃ 0.1 2.0 VEB=5V; IC=0 1.0 Emitter cut-off current DC current gain UNIT V 50 IC=7A;IB=3A 2N6288 体 半导 MAX 70 2N6288 Collector-emitter saturation voltage TYP. 30 2N6292 VCEsat-1 MIN 2N6288 IC=3A ; VCE=4V 2N6290 IC=2.5A ; VCE=4V 2N6292 IC=2A ; VCE=4V 30 DC current gain IC=7A ; VCE=4V 2.3 Transition frequency IC=0.5A ; VCE=4V;f=1MHz 2.5 2 mA mA 150 MHz Inchange Semiconductor Product Specification 2N6288 2N6290 2N6292 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3