Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE4340/4341/4342/4343 DESCRIPTION ・With TO-3PN package ・Respectively complement to type MJE4350/4351/4352/4353 ・DC current gain hFE=8(Min)@IC=16A APPLICATIONS ・For use in high power audio amplifier and switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MJE4340 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage VALUE 100 MJE4341 120 Open emitter V MJE4342 140 MJE4343 160 MJE4340 100 MJE4341 120 Open base V MJE4342 140 MJE4343 160 Emitter-base voltage UNIT Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJE4340/4341/4342/4343 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS MIN MJE4340 100 MJE4341 120 TYP. MAX IC=100mA ;IB=0 UNIT V MJE4342 140 MJE4343 160 VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=2.0A 3.5 V Base-emitter saturation voltage IC=16A; IB=2.0A 3.9 V Base-emitter on voltage IC=16A ; VCE=4V 3.9 V 0.75 mA VBEsat VBE ICEO Collector cut-off current MJE4340 VCE=50V; IB=0 MJE4341 VCE=60V; IB=0 MJE4342 VCE=70V; IB=0 MJE4343 VCE=80V; IB=0 ICEX Collector cut-off current VCE=RatedVCBO; VBE=1.5V TC=150℃ 1.0 5.0 mA ICBO Collector cut-off current VCB=RatedVCB; IE=0 0.75 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=8A ; VCE=2V 15 hFE-2 DC current gain IC=16A ; VCE=4V 8 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 800 pF fT Transition frequency IC=-1A ; VCE=20V;f=0.5MHz 2 1.0 MHz Inchange Semiconductor Product Specification MJE4340/4341/4342/4343 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3