Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Wide safe operating area APPLICATIONS ・For medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER D N O IC M E S E 2N6291 VCBO G N A CH Collector-base voltage CONDITIONS VEBO IN 2N6291 Collector-emitter voltage Emitter-base voltage VALUE UNIT 60 Open emitter 2N6293 VCEO R O T UC V 80 50 Open base 2N6293 V 70 Open collector 5 V IC Collector current 7 A IB Base current 3 A PT Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 3.125 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE-1 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage 2N6291 Base-emitter on voltage Base-emitter on voltage ICEO Collector cut-off current 2N6293 IC=2A;IB=0.2A IC=2.5A ; VCE=4V 2N6293 IC=2A ; VCE=4V IC=7A ; VCE=4V 2N6293 Emitter cut-off current hFE-1 DC current gain 1.0 V 3.5 V 1.5 V 3.0 V 1.0 mA VCE=40V; IB=0 VCE=60V; IB=0 VCE=56V; VBE=-1.5V VCE=50V; BE=-1.5V,TC=150℃ VCE=75V; VBE=-1.5V VCE=70V; BE=-1.5V,TC=150℃ VEB=5V; IC=0 2N6291 IC=2.5A ; VCE=4V 2N6293 IC=2A ; VCE=4V hFE-2 DC current gain IC=7A ; VCE=4V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=4V;f=1MHz 2 R O T UC D N O IC M E S E ANG INCH IC=7A;IB=3A 2N6291 2N6291 UNIT V IC=2.5A;IB=0.25A 导体 半 电 IEBO MAX 70 2N6291 2N6293 固 TYP. 50 2N6293 2N6291 Collector cut-off current MIN IC=0.1A ;IB=0 Collector-emitter saturation voltage VBE-2 ICEX CONDITIONS 30 0.1 2.0 0.1 2.0 mA 1.0 mA 150 2.3 250 10 pF MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6291 2N6293 PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3