ISC 2N6291

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6291 2N6293
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・Wide safe operating area
APPLICATIONS
・For medium power switching and
amplifier applications such as:series
and shunt regulators and driver and
output stages of high-fidelity amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体
半
电
固
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
D
N
O
IC
M
E
S
E
2N6291
VCBO
G
N
A
CH
Collector-base voltage
CONDITIONS
VEBO
IN
2N6291
Collector-emitter voltage
Emitter-base voltage
VALUE
UNIT
60
Open emitter
2N6293
VCEO
R
O
T
UC
V
80
50
Open base
2N6293
V
70
Open collector
5
V
IC
Collector current
7
A
IB
Base current
3
A
PT
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
3.125
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6291 2N6293
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBE-1
PARAMETER
Collector-emitter
sustaining voltage
Collector-emitter
saturation voltage
2N6291
Base-emitter
on voltage
Base-emitter on voltage
ICEO
Collector
cut-off current
2N6293
IC=2A;IB=0.2A
IC=2.5A ; VCE=4V
2N6293
IC=2A ; VCE=4V
IC=7A ; VCE=4V
2N6293
Emitter cut-off current
hFE-1
DC current gain
1.0
V
3.5
V
1.5
V
3.0
V
1.0
mA
VCE=40V; IB=0
VCE=60V; IB=0
VCE=56V; VBE=-1.5V
VCE=50V; BE=-1.5V,TC=150℃
VCE=75V; VBE=-1.5V
VCE=70V; BE=-1.5V,TC=150℃
VEB=5V; IC=0
2N6291
IC=2.5A ; VCE=4V
2N6293
IC=2A ; VCE=4V
hFE-2
DC current gain
IC=7A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=4V;f=1MHz
2
R
O
T
UC
D
N
O
IC
M
E
S
E
ANG
INCH
IC=7A;IB=3A
2N6291
2N6291
UNIT
V
IC=2.5A;IB=0.25A
导体
半
电
IEBO
MAX
70
2N6291
2N6293
固
TYP.
50
2N6293
2N6291
Collector
cut-off current
MIN
IC=0.1A ;IB=0
Collector-emitter saturation voltage
VBE-2
ICEX
CONDITIONS
30
0.1
2.0
0.1
2.0
mA
1.0
mA
150
2.3
250
10
pF
MHz
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6291 2N6293
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3