Inchange Semiconductor Product Specification 2N6477 2N6478 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・High voltage ratings ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers ・Power switching circuits ・Solenoid drivers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER D N O IC M E S E 2N6477 VCBO G N A CH Collector-base voltage CONDITIONS VEBO IN 2N6477 Collector-emitter voltage Emitter-base voltage VALUE UNIT 140 Open emitter 2N6478 VCEO R O T UC V 160 120 Open base 2N6478 V 140 Open collector 5 V 2.5 A IC Collector current ICM Collector current-peak 4 A IB Base current 1 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6477 2N6478 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6477 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 120 IC=0.1A ;IB=0 V 2N6478 140 VCEsat-1 Collector-emitter saturation voltage IC=1.0A;IB=0.1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=2.5A;IB=0.5A 2.0 V VBE-1 Base-emitter on voltage IC=1.0A ; VCE=4V 1.8 V VBE-2 Base-emitter on voltage IC=2.5A ; VCE=4V 3.0 V VCE=130V VCE=120V; TC=150℃ 2.0 10 2N6478 VCE=150V VCE=140V; TC=150℃ 2.0 10 2N6477 VCE=80V;IB=0 2N6477 ICEX ICEO Collector cut-off current VBE=-1.5V 体 半导 固电 Collector cut-off current mA D N O IC M E S GE 2N6478 N A H C R O T UC mA 2.0 mA VCE=100V;IB=0 IEBO Emitter cut-off current hFE-1 DC current gain IC=1.0A ; VCE=4V 25 hFE-2 DC current gain IC=2.5A ; VCE=4V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=4V IN 2.0 VEB=5V; IC=0 2 150 250 0.2 pF MHz Inchange Semiconductor Product Specification 2N6477 2N6478 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3