Inchange Semiconductor Product Specification 2N6469 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area ・High gain at high current APPLICATIONS ・General-purpose of switching and linear-amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A PT Total power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.4 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6469 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 V VCEsat-2 Collector-emitter saturation voltage IC=-15A; IB=-3A -3.5 V VBE Base-emitter on voltage IC=-15A ; VCE=-4V -3.5 V ICEO Collector cut-off current VCE=-20V; IB=0 1.0 mA ICEX Collector cut-off current VCE=-45V; VBE=-1.5V TC=150℃ -0.2 -5.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 20 hFE-2 DC current gain IC=-15A ; VCE=-4V 5 Transition frequency IC=-0.5A ; VCE=-10V 4 fT CONDITIONS 2 MIN TYP. MAX -40 UNIT V 150 MHz Inchange Semiconductor Product Specification 2N6469 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3