ISC 2N6469

Inchange Semiconductor
Product Specification
2N6469
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・Excellent safe operating area
・High gain at high current
APPLICATIONS
・General-purpose of switching
and linear-amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-15
A
IB
Base current
-5
A
PT
Total power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.4
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6469
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=-15A; IB=-3A
-3.5
V
VBE
Base-emitter on voltage
IC=-15A ; VCE=-4V
-3.5
V
ICEO
Collector cut-off current
VCE=-20V; IB=0
1.0
mA
ICEX
Collector cut-off current
VCE=-45V; VBE=-1.5V
TC=150℃
-0.2
-5.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
mA
hFE-1
DC current gain
IC=-5A ; VCE=-4V
20
hFE-2
DC current gain
IC=-15A ; VCE=-4V
5
Transition frequency
IC=-0.5A ; VCE=-10V
4
fT
CONDITIONS
2
MIN
TYP.
MAX
-40
UNIT
V
150
MHz
Inchange Semiconductor
Product Specification
2N6469
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3