Inchange Semiconductor Product Specification 2N6676 2N6677 2N6678 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage capability ・Fast switching speeds ・Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : ・Off-line power supplies ・Converter circuits ・Pulse width modulated regulators PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector 体 半导 固电 Fig.1 simplified outline (TO-3) and symbol D N O IC Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage CONDITIONS 2N6676 2N6677 Open emitter Emitter-base voltage VALUE 550 650 2N6676 300 2N6677 Open base UNIT 450 2N6678 2N6678 VEBO R O T UC 350 V V 400 Open collector 8 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 5 A PT Total power dissipation 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ Tc=25℃ Inchange Semiconductor Product Specification 2N6676 2N6677 2N6678 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6676 VCEO(SUS) Collector-emitter sustaining voltage 2N6677 MIN TYP. MAX UNIT 300 IC=0.2A ; IB=0 V 350 2N6678 400 VCEsat Collector-emitter saturation voltage IC=15A; IB=3A 1.5 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A 1.5 V ICEV Collector cut-off current VCE=RatedVCEV;VBE(off)=-1.5V TC=100℃ 0.1 1.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 2.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE -2 DC current gain IC=15A ; VCE=3V 8 Output capacitance IE=0 ;VCB=10V;f=0.1MHz COB 体 半导 固电 fT N A H INC Switching times td Delay time tr Rise time ts Storage time tf Fall time R O T UC D N O IC M E S GE Transition frequency 50 IC=1A ; VCE=10V;f=5.0MHz 500 3 pF MHz IC=15A; IB1=-IB2=3.0A VCC=200V; tp=20μs; Duty Cycle≤2.0% VBB=6V,RL=1.35Ω 0.2 μs 0.6 μs 2.5 μs 0.6 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case 2 MAX UNIT 1.0 ℃/W Inchange Semiconductor Product Specification 2N6676 2N6677 2N6678 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3