Inchange Semiconductor Product Specification BUV21 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High DC current gain@IC=12A ・Fast switching times ・Low collector saturation voltage APPLICATIONS ・Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Fig.1 simplified outline (TO-3) and symbol 体 导 半 固电 Collector SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS M E S E AGN H C N I Open emitter Open base Open collector R O T U D N O IC Absolute maximum ratings (Tc=25℃) VALUE UNIT 250 V 200 V 7 V IC Collector current 40 A ICM Collector current-peak 50 A IB Base current 8 A PT Total power dissipation 150 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.7 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BUV21 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 200 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=12 A;IB=1.2A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=25 A;IB=3A 1.5 V Base-emitter saturation voltage IC=25A;IB=3A 1.5 V ICEX Collector cut-off current VCE=250V;VBE=-1.5V TC=125℃ 3.0 12 mA ICEO Collector cut-off current VCE=160V;IB=0 3.0 mA Emitter cut-off current VEB=5V; IC=0 1.0 mA DC current gain IC=12A ; VCE=2V DC current gain IC=25A ; VCE=4V VBEsat IEBO hFE-1 hFE-2 fT 体 导 半 固电 Transition frequency Switching times ton Turn-on time ts Storage time tf Fall time IC=2A ; VCE=15V; f=4MHz IC=25A ;IB1=-IB2=3A VCC=100V ;RC=4Ω 2 MAX 20 10 UNIT R O T U D N O IC M E S NE G A H INC TYP. 60 8.0 MHz 1.0 μs 1.8 μs 0.4 μs Inchange Semiconductor Product Specification BUV21 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 R O T U D N O IC M E S NE G A H INC Fig.2 Outline dimensions 3