Inchange Semiconductor Product Specification 2N6738 2N6739 2N6740 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6738 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6739 Open emitter Emitter-base voltage 550 2N6740 650 2N6738 300 2N6739 UNIT 450 Open base 2N6740 VEBO VALUE 350 V V 400 Open collector 8 V IC Collector current 8 A ICM Collector current-peak 10 A IB Base current 4 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6738 2N6739 2N6740 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6738 VCEO(SUS) Collector-emitter sustaining voltage 2N6739 MIN TYP. MAX UNIT 300 IC=0.2A ;IB=0 V 350 400 2N6740 VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=4A 2.0 V Base-emitter saturation voltage IC=5A;IB=1A 1.6 V ICEV Collector cut-off current VCEV=Rated VCEV;VBE=-1.5V TC=100℃ 0.1 1.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 2.0 mA hFE DC current gain IC=5A ; VCE=3V 10 40 Transition frequency IC=0.2A ; VCE=10V 10 60 MHz 0.1 μs 0.4 μs VBEsat fT Switching times td Delay time tr Rise time ts Storage time 2.5 μs tf Fall time 0.5 μs IC=5A;IB1=-IB2=1A VCC=125V tp=20μs,Duty cycle≤1.0% 2 Inchange Semiconductor Product Specification 2N6738 2N6739 2N6740 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3