ISC 2N6739

Inchange Semiconductor
Product Specification
2N6738 2N6739 2N6740
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High voltage ratings
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Suited for 115 and 220V switchmode
applications such as switching regulators,
Inverters and DC-DC converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2N6738
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6739
Open emitter
Emitter-base voltage
550
2N6740
650
2N6738
300
2N6739
UNIT
450
Open base
2N6740
VEBO
VALUE
350
V
V
400
Open collector
8
V
IC
Collector current
8
A
ICM
Collector current-peak
10
A
IB
Base current
4
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.25
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
2N6738 2N6739 2N6740
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6738
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6739
MIN
TYP.
MAX
UNIT
300
IC=0.2A ;IB=0
V
350
400
2N6740
VCEsat-1
Collector-emitter saturation voltage
IC=5A;IB=1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A;IB=4A
2.0
V
Base-emitter saturation voltage
IC=5A;IB=1A
1.6
V
ICEV
Collector cut-off current
VCEV=Rated VCEV;VBE=-1.5V
TC=100℃
0.1
1.0
mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
2.0
mA
hFE
DC current gain
IC=5A ; VCE=3V
10
40
Transition frequency
IC=0.2A ; VCE=10V
10
60
MHz
0.1
μs
0.4
μs
VBEsat
fT
Switching times
td
Delay time
tr
Rise time
ts
Storage time
2.5
μs
tf
Fall time
0.5
μs
IC=5A;IB1=-IB2=1A
VCC=125V
tp=20μs,Duty cycle≤1.0%
2
Inchange Semiconductor
Product Specification
2N6738 2N6739 2N6740
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3