ISC 2N6308

Inchange Semiconductor
Product Specification
2N6308
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for high voltage inverters,
switching regulators,line operated amplifiers,
and switching power supplies applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
700
V
VCEO
Collector-emitter voltage
Open base
350
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current
8
A
IB
Base current
4
A
PT
Total power dissipation
125
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
Tc=25℃
Inchange Semiconductor
Product Specification
2N6308
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A; IB=2.67A
5.0
V
Base-emitter saturation voltage
IC=8A; IB=2.67A
2.5
V
VBE
Base-emitter on voltage
IC=3A ; VCE=5V
1.5
V
ICEV
Collector cut-off current
VCE=700V; VBE=-1.5V
0.5
mA
ICEO
Collector cut-off current
VCE=350V; IB=0
0.5
mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
1.0
mA
hFE-1
DC current gain
IC=3A ; VCE=5V
12
hFE -2
DC current gain
IC=8A ; VCE=5V
3
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.3A ; VCE=10V;f=1MHz
VBEsat
CONDITIONS
MIN
TYP.
MAX
350
UNIT
V
60
250
5
pF
MHz
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V; IC=3.0A; IB=0.6A
2
0.6
μs
1.6
μs
0.4
μs
Inchange Semiconductor
Product Specification
2N6308
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3