Inchange Semiconductor Product Specification 2N6308 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 8 A IB Base current 4 A PT Total power dissipation 125 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ Tc=25℃ Inchange Semiconductor Product Specification 2N6308 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=2.67A 5.0 V Base-emitter saturation voltage IC=8A; IB=2.67A 2.5 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.5 V ICEV Collector cut-off current VCE=700V; VBE=-1.5V 0.5 mA ICEO Collector cut-off current VCE=350V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA hFE-1 DC current gain IC=3A ; VCE=5V 12 hFE -2 DC current gain IC=8A ; VCE=5V 3 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.3A ; VCE=10V;f=1MHz VBEsat CONDITIONS MIN TYP. MAX 350 UNIT V 60 250 5 pF MHz Switching times tr Rise time ts Storage time tf Fall time VCC=125V; IC=3.0A; IB=0.6A 2 0.6 μs 1.6 μs 0.4 μs Inchange Semiconductor Product Specification 2N6308 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3