ISC 2SC2331

Inchange Semiconductor
Product Specification
2SC2331
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SA1008
・Low collector saturation voltage
・Fast switching speed
APPLICATIONS
・Switching regulators
・DC-DC converters
・High frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
半
固电
EM
S
E
NG
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
R
O
T
UC
Fig.1 simplified outline (TO-220) and symbol
A
H
C
IN
PARAMETER
D
N
O
IC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
100
V
Collector-emitter voltage
Open base
100
V
Emitter-base voltage
Open collector
7
V
IC
Collector current
2.0
A
ICM
Collector current-Peak
4.0
A
IB
Base current
1.0
A
PT
Total power dissipation
Ta=25℃
1.5
TC=25℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC2331
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
100
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1.0A ,IB=0.1A,L=1mH
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
40
hFE-2
DC current gain
IC=1A ; VCE=5V
40
Switching times resistive load
ton
ts
tf
‹
体
导
半
Turn-on time
固电
A
H
C
IN
Fall time
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2
200
R
O
T
UC
D
N
O
IC
IC=1.0A IB1=- IB2=0.1A
RL=50Ω;VCC≈50V
EM
S
E
NG
Storage time
V
0.5
μs
1.5
μs
0.5
μs
Inchange Semiconductor
Product Specification
2SC2331
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
D
N
O
IC
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
R
O
T
UC