Inchange Semiconductor Product Specification 2SC2331 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1008 ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 固电 EM S E NG Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO R O T UC Fig.1 simplified outline (TO-220) and symbol A H C IN PARAMETER D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 100 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 7 V IC Collector current 2.0 A ICM Collector current-Peak 4.0 A IB Base current 1.0 A PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2331 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 100 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 40 hFE-2 DC current gain IC=1A ; VCE=5V 40 Switching times resistive load ton ts tf 体 导 半 Turn-on time 固电 A H C IN Fall time hFE-2 Classifications M L K 40-80 60-120 100-200 2 200 R O T UC D N O IC IC=1.0A IB1=- IB2=0.1A RL=50Ω;VCC≈50V EM S E NG Storage time V 0.5 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC2331 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 R O T UC