Inchange Semiconductor Product Specification 2SD1444 2SD1444A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching ・High collector current ・Complement to type 2SB953/953A APPLICATIONS ・Power amplifiers ・Low voltage switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO PARAMETER E SEM 2SD1444 G N A CH Collector-base voltage D N O IC CONDITIONS IN 2SD1444 Collector-emitter voltage VEBO Emitter-base voltage IC VALUE UNIT 40 Open emitter 2SD1444A VCEO R O T UC V 50 20 Open base 2SD1444A V 40 Open collector 5 V Collector current (DC) 7 A ICM Collector current-peak 12 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1444 2SD1444A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1444 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 20 IC=10mA , IB=0 2SD1444A V 40 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.16A 1.5 V 50 μA 50 μA 2SD1444 VCB=40V; IE=0 2SD1444A VCB=50V; IE=0 Collector cut-off current ICBO IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=2V hFE-2 DC current gain fT 体 导 半 固电 COB A H C IN Output capacitance D N O IC IC=2A ; VCE=2V EM S E NG Transition frequency R O T UC 45 60 260 IC=0.5A ; VCE=10V 150 MHz IE=0 ; VCB=10V;f=1MHz 110 pF 0.3 μs 0.3 μs 0.1 μs Switching times ton Turn-on time tstg Storage time tf IC=2A; IB1=-IB2=66mA Fall time hFE-2 Classifications R Q P 60-120 90-180 130-260 2 Inchange Semiconductor Product Specification 2SD1444 2SD1444A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3