ISC 2SD1444A

Inchange Semiconductor
Product Specification
2SD1444 2SD1444A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・High speed switching
・High collector current
・Complement to type 2SB953/953A
APPLICATIONS
・Power amplifiers
・Low voltage switching
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
体
导
半
Absolute maximum ratings(Ta=25℃)
固电
SYMBOL
VCBO
PARAMETER
E SEM
2SD1444
G
N
A
CH
Collector-base voltage
D
N
O
IC
CONDITIONS
IN
2SD1444
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
VALUE
UNIT
40
Open emitter
2SD1444A
VCEO
R
O
T
UC
V
50
20
Open base
2SD1444A
V
40
Open collector
5
V
Collector current (DC)
7
A
ICM
Collector current-peak
12
A
PC
Collector power dissipation
TC=25℃
30
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1444 2SD1444A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD1444
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
20
IC=10mA , IB=0
2SD1444A
V
40
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.16A
0.6
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.16A
1.5
V
50
μA
50
μA
2SD1444
VCB=40V; IE=0
2SD1444A
VCB=50V; IE=0
Collector
cut-off current
ICBO
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=2V
hFE-2
DC current gain
fT
体
导
半
固电
COB
A
H
C
IN
Output capacitance
D
N
O
IC
IC=2A ; VCE=2V
EM
S
E
NG
Transition frequency
R
O
T
UC
45
60
260
IC=0.5A ; VCE=10V
150
MHz
IE=0 ; VCB=10V;f=1MHz
110
pF
0.3
μs
0.3
μs
0.1
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=2A; IB1=-IB2=66mA
Fall time
hFE-2 Classifications
R
Q
P
60-120
90-180
130-260
2
Inchange Semiconductor
Product Specification
2SD1444 2SD1444A
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3