Inchange Semiconductor Product Specification 2SA1135 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2665 APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -4 A IB Base current -1 A PC Collector power dissipation 55 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1135 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -1.0 mA hFE DC current gain IC=-1A ; VCE=-4V Transition frequency IE=0.2A ; VCE=-10V fT CONDITIONS MIN TYP. MAX -80 UNIT V 40 10 MHz 1.0 μs 0.4 μs 0.15 μs Switching times tr tstg tf Rise time Storage time IC=-2A ; VCC=-6V IB1=-IB2=-0.3A;RL=3Ω Fall time 2 Inchange Semiconductor Product Specification 2SA1135 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3