ISC 2SA1106

Inchange Semiconductor
Product Specification
2SA1106
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·High frequency
·Complement to type 2SC2581
APPLICATIONS
·Audio power amplifer applications
·DC-DC converters
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-140
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-10
A
IB
Base current
-4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1106
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
VCE(sat(
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
μA
hFE
DC current gain
IC=-3A ; VCE=4V
Transition frequency
IE=0.5A ; VCE=-12V
fT
CONDITIONS
MIN
TYP.
MAX
-140
UNIT
V
30
20
MHz
0.3
μs
0.9
μs
0.2
μs
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=- IB2=-0.5A
VCC=60V
2
Inchange Semiconductor
Product Specification
2SA1106
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3